A5101954866- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Infrastructure Resilience and Vulnerability Analysis
- Semiconductor materials and interfaces
- Anodic Oxide Films and Nanostructures
- Nonlinear Optical Materials Research
- Semiconductor Lasers and Optical Devices
- Spectroscopy and Quantum Chemical Studies
- Complex Network Analysis Techniques
- Crystal Structures and Properties
Beijing University of Posts and Telecommunications
2021-2025
Shanghai Institute of Ceramics
2022
Chinese Academy of Sciences
2022
University of Chinese Academy of Sciences
2022
Xinjiang University
2016
As byproducts of the direct growth III–V materials on on-axis Si(001) substrates via molecular beam epitaxy (MBE), antiphase boundaries (APBs) degrade performance optoelectronic devices. In this study, to grow APB-free GaAs, we propose a straightforward yet robust approach address challenge. Based atomic force microscopy and transmission electron analyses, present evidence that in situ annealing substrate an arsenic-free chamber environment can effectively modify surface step distribution....
Vulnerability plays an important role in the propagation of cascading failures power systems. Based on fault chains, this brief, we propose a new graph evolution model and use theory to reveal physical properties vulnerability model. Besides, combined with model, transmission expansion planning algorithm is proposed mitigate failures, by which computational complexity can be reduced. Numeric results show that heterogeneous scale-free distribution, implies most vulnerable lines identified...
The formation of double-layer atomic steps on Si(001) surfaces is an efficient way to eliminate the antiphase boundaries (APBs) GaAs/Si(001) interfaces. surface energy on-axis with different step structures was calculated and analyzed from first principles. An optimal hydrogen-annealing process condition, hydrogen pressure 800 mbar annealing temperature °C for 10 min, obtained experimentally. Under this a 420 nm APB-free GaAs epitaxial layer grown substrates achieved by metal-organic...
Abstract Herein, we report the phase transformation mechanism of nominal Si(001) surface driven by hydrogen thermal annealing. The energies H-terminated with different structures were calculated density functional theory. results show that monoatomic steps can transform into diatomic under proper ranges chemical potential. Combining thermodynamic and kinetic factors, can’t occur when annealing temperature lower or higher than 800 °C. In addition, phases types are alternately transformed...
Abstract Multi‐wavelength light sources are crucial for high‐bandwidth silicon photonic chips. In this paper, a single heterogeneous quantum dot distributed feedback (DFB) laser emitting 4 wavelengths using the combination‐grating technology is designed. To best of knowledge, first heterogeneously integrated DFB that lases stable multi‐wavelength in cavity. When etching depth, width, and total length gratings 100 , 550 nm, 1 000 µm, respectively, 4‐wavelength with 1297.01 1303.38 1309.74...
The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade performance of lasers grown on silicon. insertion InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative solving this problem. In paper, finite element method (FEM) proposed calculate critical condition for InAs/GaAs QDs bending TDs into interfacial misfit (MDs). Making comparison elastic strain energy between two isolated systems, reasonable result obtained....
Yttrium calcium oxyborate (YCOB) crystals are excellent candidate materials for nonlinear optical (NLO) applications.