A5036771281- Silicon Carbide Semiconductor Technologies
- Electronic Packaging and Soldering Technologies
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced ceramic materials synthesis
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Multilevel Inverters and Converters
- Aluminum Alloys Composites Properties
- Copper Interconnects and Reliability
- Phase-change materials and chalcogenides
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- Advanced Battery Technologies Research
- Industrial Vision Systems and Defect Detection
- Heat Transfer and Optimization
- Autonomous Vehicle Technology and Safety
- Vibration and Dynamic Analysis
- Mechanical Failure Analysis and Simulation
- Thermal properties of materials
- Mechanical Behavior of Composites
STMicroelectronics (Italy)
2016-2025
Magna Graecia University
2025
Department of Medical Sciences
2025
STMicroelectronics (Czechia)
2021-2024
University of Catania
2011-2021
Institute for Microelectronics and Microsystems
2018
The objective of this study was to develop a Computational Fluid Dynamics (CFD) 3D model for an industrial application, investigate how surface roughness affected pressure drop and thermal performance in the ACEPACKTM DRIVE, commercial SiC-based power module used traction inverters, that features pin-finned baseplate with cylindrical pin-fins. pin-fins modelled by using sand-grain available Ansys Fluent, which represents novelty literature can pave way development accurate computationally...
The metallized insulating substrates work as mechanical supports for the circuitry of Power Module Packages. Due to their specific functions, power electronics are made by different materials. conductive metal layers can assume functions: top serves routing while bottom improves robustness and thermal efficiency. Ceramic layer provides excellent electrical insulation. These features play an essential role in operation modules, which often operated at high voltage current density. substrates,...
The increasing demand in automotive markets is leading the semiconductor industries to develop high-performance and highly reliable power devices. Silicon carbide MOSFET chips are replacing silicon-based solutions through their improved electric thermal capabilities. In order support development of these novel semiconductors, packaging technologies evolving provide enough products. Silver sintering one most promising for die attach. Due superior reliability properties with respect...
Abstract Background Gastrointestinal Infections (GIs) pose a significant challenge in patients with inflammatory bowel diseases (IBD), complicating its management and triggering IBD relapses. The overlap clinical symptoms makes complex differentiating GIs from flares, impacting therapeutic decisions. This study aims at evaluating the long-term impact of patients. Methods From January 2020 to September 2024, 102 (mean age 45±16 yrs; 78 ulcerative colitis, UC 24 Crohn’s disease, CD)...
REACTION is an EU Innovation Action Funded Project which aims to develop the first worldwide 200mm Silicon Carbide (SiC) Pilot Line for SiC based Power technology. The project, mainly addresses Smart Mobility societal challenge (car electrification), will allow match ever-increasing demand of requirements in terms quality and cost constraint next decade generation's power electronics. A major strength project complete value chain implementation Line, integrates optimizes cooperation...
The purpose of this paper is to predict the device lifetime under a power cycling test by simulation method that based on distributed self-heating SPICE model. Correlation between numeric extrapolation and experimental data done considering Repetitive Avalanche test, particular active temperature evaluates ruggedness device. considered failure mechanism due front metal aging produces contact resistance degradation. This phenomenon strongly dependent temperature, proposed tool, validated with...
Semiconductor power modules are the key hardware components of a traction inverter. It drives motor speed and torque, managing energy exchange from battery to viceversa. The increasing demand for electric hybrid vehicle requests high performance modules. Power semiconductor devices based on wide band gap compound, like silicon carbide (SiC), have excellent electrical properties in terms on-state resistance, stray inductance at commutation frequency. One most promising solution is MOSFET...
Solder reliability is a key aspect for the packaging of low voltage power semiconductor device. The interconnections among package components, e.g. silicon chip and copper leadframe, between itself external printed control board (PCB) should be properly designed to ensure automotive durability requirements. In this framework, proposed paper introduces an experimental-numeric characterization flow with purpose analyze solder visco-plasticity fatigue during passive temperature cycle. presented...
Inverse modelling with deep learning algorithms involves training architecture to predict device's parameters from its static behaviour. device is suitable reconstruct drifted physical of devices temporally degraded or retrieve configuration. There are many variables that can influence the performance an inverse method. In this work authors propose a method trained for retrieving Level-3 model Power Silicon-Carbide MOSFET (SiC MOS). The SiC used in applications where classical silicon failed...
High temperature application and long term reliability are the future trends for power electronics. A key factor to enable applications is interconnection durability improvement under high thermo-mechanical cycling loads. Nowadays, standard solders cannot fulfill requirements of electronic devices, therefore technologies have be developed. One most promising joining technique Ag sintering. Combining properly temperature, time pressure, a strong, highly electrically thermally conductive bond...
In this paper an overview on Power Packages challenges and technology approaches is given. These mainly originate from Silicon Carbide MOSFETs superior properties allowing high power, temperature capability, fast switching transients electric field operations. All these features can be obtained in a significant reduced chip area. order to benefit the disrupting advantages of wide band gap semiconductor based power devices, strong focus packaging interconnection technologies needed withstand...
The presented analysis has been aimed to evaluate the impact of die solder and sintering solution for automotive power modules in terms thermal behavior. First, dedicated temperature measurements have performed module impedance two cases. Then, a lumped equivalent networks calculated, by means numeric, finally function structures extracted
Power SiC MOSFETs are going to substitute Si devices by their significantly better performances that make them much suitable in power switching applications such as electric/hybrid vehicles. The increasingly use of these critical mission profiles requires an ever-higher reliability, whereas the increase dissipated during high-speed working cycling due short current pulses leads unavoidable thermal and mechanical stress. Here, we propose a direct method evaluate stress pulses. This highlights...