A5027634945- Quantum Information and Cryptography
- Quantum optics and atomic interactions
- Diamond and Carbon-based Materials Research
- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Quantum and electron transport phenomena
- Mechanical and Optical Resonators
- Semiconductor materials and interfaces
- Laser-Matter Interactions and Applications
- Atomic and Subatomic Physics Research
- Advancements in Semiconductor Devices and Circuit Design
- Nonlinear Optical Materials Studies
- Quantum Computing Algorithms and Architecture
- Silicon and Solar Cell Technologies
- Quantum Mechanics and Applications
- Orbital Angular Momentum in Optics
- Laser Material Processing Techniques
- Thin-Film Transistor Technologies
Massachusetts Institute of Technology
2022-2025
Harvard University
2022-2024
Harvard University Press
2024
Long-distance quantum communication and networking require memory nodes with efficient optical interfaces long times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists SiV electron spin acting as a strongly coupled 29Si nuclear time exceeding two seconds. By using highly strained suppressed spin-phonon interactions, we realize electron-photon entangling gates at elevated...
Abstract A key challenge in realizing practical quantum networks for long-distance communication involves robust entanglement between memory nodes connected by fibre optical infrastructure 1–3 . Here we demonstrate a two-node network composed of multi-qubit registers based on silicon-vacancy (SiV) centres nanophotonic diamond cavities integrated with telecommunication network. Remote is generated the cavity-enhanced interactions electron spin qubits SiVs and photons. Serial, heralded...
Practical quantum networks require interfacing memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional frequency conversion enables a solid-state memory to directly interface telecom-band systems. In particular, of visible-band single photons emitted from silicon-vacancy (<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:mi>Si</a:mi></a:math><d:math...
Distributing quantum information between remote systems will necessitate the integration of emerging components with existing communication infrastructure. This requires understanding channel-induced degradations transmitted signals, beyond typical characterization methods for classical systems. Here we report on a comprehensive Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring time-of-flight, polarization, and phase noise imparted signals. We further design demonstrate...
Solutions for scalable, high-performance optical control are important the development of scaled atom-based quantum technologies. Modulation many individual beams is central to applying arbitrary gate and sequences on arrays atoms or atom-like systems. At telecom wavelengths, miniaturization components via photonic integration has pushed scale performance classical optics far beyond limitations bulk devices. However, material platforms high-speed integrated photonics lack transparency at...
A quantum register coupled to a spin-photon interface is key component in communication and information processing. Group-IV color centers diamond (SiV−, GeV−, SnV−) are promising candidates for this application, comprising an electronic spin with optical transitions nuclear as the register. However, creation of these deterministic strong coupling remains challenging. Here, we make first-principles predictions hyperfine parameters group-IV centers, which verify experimentally comprehensive...
Abstract Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon by implementing novel lateral diodes an integrated G center ensemble in a on insulator wafer. The optical response is characterized under application reverse-biased DC field, observing both 100% modulation fluorescence signal, and wavelength...
The T center in silicon has recently emerged as a promising candidate for scalable quantum technologies, due to its telecommunications band optical transition and microwave addressable ground state spin. immense promise of the is driven by host material; far most mature, manufacturable semiconductor material integrated photonic electronic devices. Here, we present first study T-centers an electrical device. We ensemble centers coupled buried lateral P-I-N diode silicon, observing T-center's...
Realizing a quantum network will require long-lived memories with optical interfaces incorporated into scalable architecture. Color-center emitters in diamond have emerged as promising memory modality due to their properties and compatibility integration. However, developing color-center emitter module requires significant advances the areas of heterogeneous integration cryogenically compatible packaging. Here we report on stable for use. This is development towards advanced networking...
A key challenge in realizing practical quantum networks for long-distance communication involves robust entanglement between memory nodes connected via fiber optical infrastructure. Here, we demonstrate a two-node network composed of multi-qubit registers based on silicon-vacancy (SiV) centers nanophotonic diamond cavities integrated with telecommunication (telecom) network. Remote is generated the cavity-enhanced interactions SiV's electron spin qubits and photons. Serial, heralded...
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that characteristics individual color are often strain dependent. As an illustrative case, silicon-vacancy center in diamond typically requires millikelvin temperatures order to achieve long coherence properties, but strained been shown operate at beyond 1 K without phonon-mediated decoherence. In this work, we combine...
We generate remote entanglement between spatially separate color-center based quantum nodes at rates up to 1 Hz. In addition, we demonstrate across a deployed 35km long fiber loop in the Boston urban area.
A key challenge in realizing long-distance quantum networks involves entanglement between memory nodes via existing fiber infrastructure. Here, we demonstrate a two-node network based on Silicon Vacancy defect centers diamond nanophotonic cavities integrated with metropolitan telecommunication [1].
We generate remote entanglement between spatially separate color-center based nanophotonic quantum network nodes. In addition, we demonstrate distribution across a 35 km long fiber loop deployed in the Boston urban area.
Silicon color centers have emerged as promising candidates for quantum information technologies, yet their interaction with electric fields is not well understood. We will discuss electrical manipulation of G-centers in silicon -- emitters that photoluminesce the telecom O-band. fabricated lateral diodes an integrated ensemble G a commercial on insulator wafer. Under application reverse-biased DC field, redshifts by approximately 1.4 GHz/V above threshold "turn-on voltage." The fluorescence...
We perform low noise conversion of single photons from a diamond silicon vacancy color center to the telecom O-band. demonstrate preservation photonic quantum properties, enabling their usage in deployed networking applications.
We present an efficient microwave and optical interface for quantum memories at 1.3 K based on tin-vacancy color centers in diamond scalable integrated photonics.
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon by fabricating lateral diodes an integrated G center ensemble in a on insulator wafer. The optical response is characterized under application reverse-biased DC field, observing both 100% modulation fluorescence signal, and wavelength redshift...
We report on the engineering of a multi-qubit silicon-vacancy-based quantum memory module suitable for networking over optical channels.