A5102907237- Radiation Detection and Scintillator Technologies
- Advanced Radiotherapy Techniques
- Luminescence Properties of Advanced Materials
- Radiation Therapy and Dosimetry
- Glass properties and applications
- Quantum optics and atomic interactions
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced Optical Sensing Technologies
- Random lasers and scattering media
- Advancements in Semiconductor Devices and Circuit Design
- Boron Compounds in Chemistry
- Advanced X-ray and CT Imaging
- Radioactivity and Radon Measurements
- Lanthanide and Transition Metal Complexes
- Photorefractive and Nonlinear Optics
- Medical Imaging Techniques and Applications
Oklahoma State University
2016-2020
Birla Institute of Technology, Mesra
1992
The objective of this work is to demonstrate the feasibility 2D dosimetry using optically stimulated luminescent (OSL) films based on MgB4O7:Ce,Li and identify current limitations material for application. A small quantity test was produced read a laser-scanning OSL reader after irradiation. luminescence dosimetric properties were also investigated. results advantage fast lifetime associated with Ce3+ emission (∼31.5 ns) readout, since it minimizes need pixel-bleeding correction. signal...
This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, image reconstruction algorithm, and 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C Al2O3:C,Mg) radiochromic film (Gafchromic EBT3) were irradiated beam different doses, field sizes, without wedge filter. Dependence on orientation system was also tested. Diode-array...
The objective of this work is to demonstrate the potential application Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films for 2D dosimetry in magnetic resonance guided radiotherapy (MRgRT), a modality which combines two dosimetric challenges: small field presence field. To achieve that, prototype OSL produced by Landauer (Glenwood, IL, USA) were characterized using MRIdian system (ViewRay Inc., Mountain View, California, USA). was initially equipped with three 60Co heads on...
A seminumerical model of an ion-implanted GaAs optical-field-effect-transistor (OPFET) is presented. The objective the present work to overcome limitations existing without changing basic approach. Analytical expressions obtained using one-dimensional Poisson's equation have been solved numerically obtain I-V characteristics device in dark and illuminated conditions. It seen that saturation drain current changes significantly condition. has improved by considering effects photovoltage...