A5078094020- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Ferroelectric and Piezoelectric Materials
- Physics of Superconductivity and Magnetism
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- Topological Materials and Phenomena
- Solid-state spectroscopy and crystallography
- Magnetic properties of thin films
- Rare-earth and actinide compounds
- Acoustic Wave Resonator Technologies
- Magneto-Optical Properties and Applications
- High-pressure geophysics and materials
- Crystal Structures and Properties
- Iron-based superconductors research
- Graphene research and applications
- Magnetic Properties of Alloys
- Organic and Molecular Conductors Research
- Advanced Thermoelectric Materials and Devices
- Inorganic Chemistry and Materials
- Theoretical and Computational Physics
- Quantum and electron transport phenomena
- Gas Sensing Nanomaterials and Sensors
- Inorganic Fluorides and Related Compounds
Rutgers, The State University of New Jersey
2016-2025
Pohang University of Science and Technology
2016-2025
Korea Foundation for Max Planck POSTECH
2019-2025
Rutgers Sexual and Reproductive Health and Rights
2012-2025
Quantum Group (United States)
2025
Pohang Accelerator Laboratory
2020-2024
University of Waterloo
2021
Clinical Research Organization
2020
Kyushu Institute of Technology
2019
Los Alamos National Laboratory
1988-2018
Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces p-n junctions or metal/semiconductor with Schottky barriers. We report on diode effect associated the direction of bulk polarization BiFeO3: ferroelectric small optical gap edge approximately 2.2 electron volts. conduction monodomain BiFeO3 crystals highly nonlinear and unidirectional. This switches its when flipped by an external voltage. A...
Working in concert, theorists and experimentalists have found promising new ways to get two traditional foes—ferroelectricity magnetism—to coexist
We report inelastic neutron scattering measurements on Na2IrO3, a candidate for the Kitaev spin model honeycomb lattice. observe spin-wave excitations below 5 meV with dispersion that can be accounted by including substantial further-neighbor exchanges stabilize zigzag magnetic order. The onset of long-range order T(N)=15.3 K is confirmed via observation oscillations in zero-field muon-spin rotation experiments. Combining single-crystal diffraction and density functional calculations we...
The structural properties of ${\mathrm{LaCoO}}_{3}$ were studied by means high-resolution neutron powder diffraction in the temperature range $5<~T<~1000\mathrm{K}.$ Changes ${\mathrm{Co}}^{+3}$ spin states this interval are shown to affect not only unit-cell volume, as previously known, but also internal parameters such metal-oxygen bond lengths. These data, well temperature-dependent magnetic susceptibility, can be qualitatively modeled based on a three-state (low-spin, intermediate-spin,...
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity refers to the mutual coupling between magnetism (spins and/or magnetic field) electricity (electric dipoles electric field). In spite of long research history in whole twentieth century, discipline multiferroicity has never been so highly active as that first decade twenty-first it become hottest disciplines condensed matter physics science. A series milestones steady progress past have enabled our...
Directions of rectification and photocurrent in a ferroelectric BiFeO3 crystal can be switched by applying high-voltage pulses at room temperature. The switching is highly repeatable though cycling also stable with time. This switchable diode effect results from the combination polarization flipping electromigration oxygen vacancies.
We show that a number of transport properties in topological insulator (TI) Bi${}_{2}$Se${}_{3}$ exhibit striking thickness dependences over range up to five orders (3 nm--170 \ensuremath{\mu}m). Volume carrier density decreased with thickness, presumably due diffusion-limited formation selenium vacancies. Mobility increased linearly the thin film regime and saturated thick limit. The weak antilocalization effect was dominated by single two-dimensional channel two decades thickness....
Quantum states of strongly correlated electrons are prime importance to understand exotic properties condensed matter systems and the controllability over those promises unique electronic devices such as a Mott memory. As recent example, ultrafast switching device was demonstrated using transition between insulating state hidden-order metallic layered metal dichalcogenides 1T-TaS2. However, origin hidden not clear only macroscopic by laser pulse carrier injection reported. Here, we...
Magnetic van der Waals (vdW) materials have emerged as promising candidates for spintronics applications, especially after the recent discovery of intrinsic ferromagnetism in monolayer vdW materials. There has been a critical need tunable ferromagnetic beyond room temperature. Here, we report real-space imaging study itinerant ferromagnet Fe3GeTe2 and enhancement its Curie temperature well above ambient We find that magnetic long-range order is characterized by an unconventional out-of-plane...
By virtue of the layered structure, van der Waals (vdW) magnets are sensitive to lattice deformation controlled by external strain, providing an ideal platform explore one-step magnetization reversal that is still conceptual in conventional due limited strain-tuning range coercive field. In this study, a uniaxial tensile strain applied thin flakes vdW magnet Fe3 GeTe2 (FGT), and dramatic increase field (Hc ) more than 150% with 0.32% observed. Moreover, change transition temperatures between...
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to forefront of ultralow-power electronic systems. Maximizing potential application in memory devices or supercapacitors these materials requires a combined effort by community address technical limitations, which still hinder their application. Besides favorable intrinsic material properties, HfO2–ZrO2 face challenges regarding endurance, retention, wake-up effect, high...
Abstract Altermagnetism is introduced as a category of magnetic states with ‘collinear’ antiferromagnetic spins and alternating variations local structures around in such way that the symmetry allows typical ferromagnetic behaviors. Altermagnets exhibiting behaviors without any external perturbations (type-I) turn out to belong point group. Other altermagnets (type-II type-III) can have only electric current or stress, which conserve parity-time-reversal (PT) symmetry. All types themselves...
High-speed optical communication requires ultrafast all-optical processing and switching capabilities. The Kerr nonlinearity, an is often used as the basic mechanism. A practical, small device that can be switched with ~1-pJ energies a large effect minimal losses (both linear nonlinear). We have investigated theoretically experimentally number of Se-based chalcogenide glasses. found compounds nonlinearity hundreds times larger than silica, making them excellent candidates for devices.
We present a detailed study on the effects of applied hydrostatic pressure magnetoresistance in doped LaMn${\mathrm{O}}_{3}$ at fixed doping level. In all cases, application external monotonically increases Curie temperature. This is compared with "internal" pressure, which varied by substituting different rare-earth ions for La. Both can be understood one simple picture that relates structural modifications to variation Mn-Mn electronic transfer integral. Thus general phase diagram has been...
High-energy inelastic neutron scattering is used to resolve spin waves in ${\mathrm{La}}_{2}$${\mathrm{CuO}}_{4}$. The corresponding long-wavelength velocity 0.85\ifmmode\pm\else\textpm\fi{}0.03 eV A\r{}, well above previous bounds set by thermal scattering. Within experimental error, conventional spin-wave theory gives an excellent description of the magnetic dynamics for momentum and energy transfers below 0.15 A${\r{}}^{\mathrm{\ensuremath{-}}1}$ 0.1 eV, respectively. Doping with Ba...
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO 2 that were grown by high-pressure thermal decomposition 3 . High-temperature annealing treatments modified the intergrain barriers as-grown through surface into insulating Cr O , which led to a threefold enhancement low-field magnetoresistance. This indicates potential this simple method directly control interface barrier characteristics determine magnetotransport properties.