A5067869647- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
Institute of Microelectronics
2017-2018
Peking University
2017-2018
In this letter, we demonstrate a recessed-anode Schottky barrier diode (SBD) on double AlGaN/GaN heterojunction structure. A self-terminated, oxidation/wet etching with low-pressure chemical vapor deposition (LPCVD) Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> mask is applied in the anode recess process. Unlike common plasma-based, dry techniques, etched surface not subjected to...
A gate-recessed normally OFF GaN metal-oxide-semiconductor high-electron-mobility transistor on silicon substrate has been fabricated using a self-terminated, plasma-free oxidation and wet etching process with pre-recess low-pressure chemical vapor deposition (LPCVD) Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> passivation layer. The LPCVD serves the dual role of gate-recess mask...
For devices with a 15 micron anode-tocathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V ) has been achieved by replacing alloyed Ohmic contact at anode electrode of conventional MOS gated hybridanode lateral field-effect rectifier (CMLFER) low barrier Schottky contact. The new Schottky-MOS hybrid-anode is found offer comparable onset (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>...
In this letter, a gate recessed normally-off GaN metal-oxide-semiconductor high-electron-mobility-transistor on silicon substrate is fabricated using AlN/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> as the passivation layer. The thin AlN layer serves dual role of protecting channel region from direct plasma bombardment during RIE Si removal and passivating surface states in...
AlGaN/GaN lateral diodes on silicon are considered very promising for next generation power conversion systems owing to the excellent material properties. Typically, anode recess is a frequently-used and effective technology in reducing SBD's V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> <tex xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}_{\mathrm{ON},\mathrm{SP}}$</tex> [1]. However, rough surface morphology poor depth...