A5009583465- Aluminum Alloys Composites Properties
- Aluminum Alloy Microstructure Properties
- Physics of Superconductivity and Magnetism
- Microstructure and mechanical properties
- Advanced Surface Polishing Techniques
- Advanced ceramic materials synthesis
- Magnetic and transport properties of perovskites and related materials
- Metallurgy and Material Forming
- Microstructure and Mechanical Properties of Steels
- Metal and Thin Film Mechanics
- Advanced Condensed Matter Physics
- Metal Forming Simulation Techniques
- Advanced materials and composites
- Advanced machining processes and optimization
- Copper Interconnects and Reliability
- Electronic Packaging and Soldering Technologies
- Metal Alloys Wear and Properties
- Additive Manufacturing and 3D Printing Technologies
- Intermetallics and Advanced Alloy Properties
- Surface Treatment and Residual Stress
- Magnetic properties of thin films
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- Magnetic Properties and Applications
- Titanium Alloys Microstructure and Properties
Nagoya Institute of Technology
2016-2025
Nerima General Hospital
2025
Jichi Medical University
2022-2024
Jichi Medical University Saitama Medical Center
2022-2024
The University of Tokyo
1981-2024
Japan Agency for Marine-Earth Science and Technology
2021-2024
Agricultural Research Center
2022-2023
Hokkaido Agricultural Research Center
2022-2023
National Agriculture and Food Research Organization
2022
Koga Hospital
2022
Using nitrogen-dioxide (NO 2 ) adsorption treatment and Al O 3 passivation technique, we improved drain current ( I DS of hydrogen-terminated (H-terminated) diamond field-effect transistors (FETs). The layer also serves as a gate-insulator in gate region. Maximum DSmax -1.35 A/mm was obtained for the FETs with NO layer. This is highest ever reported indicates that can stabilize adsorbed , which increases hole carrier concentration on H-terminated surface. In RF small-signal characteristics,...
One of the fabrication methods for functionally graded materials (FGMs) is a centrifugal solid-particle method, which an application casting technique. However, it difficult to fabricate FGMs containing nano-particles by method. Recently, we proposed novel have named mixed-powder can obtain nano-particles. Using this processing Cu-based SiC particles and Al-based TiO2 on their surfaces been fabricated. In article, microstructure mechanical property Cu/SiC Al/TiO2 FGMs, fabricated method are reviewed.
We have established an atomic-layer-deposited Al2O3 overlayer deposition method, which makes the H-surface-terminated p-type channel diamond surface thermally stable and completely keeps concentration mobility high even at 150 °C. In a range from 230 to 500 K, is proportional inverse of temperature showing property characteristic for degenerate hole gas. The ionization energy estimated be 6.1 meV, indicating that holes are not generated mainly by thermal activation. This stabilization...
We have grown (001)-oriented thin films of ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{y}$ with strontium composition $x=0--2$ by reactive coevaporation and characterized them x-ray-diffraction resistivity measurements. A systematical change in the c-axis length indicates that single-phase were obtained for whole compositional range. The oxygen $y\ensuremath{\sim}4$ showed superconductivity x between 0.06 0.30. For $x=0.15,$ superconducting transition temperature...
We have performed a detailed study of the tunneling spectra bicrystal grain boundary junctions (GBJs) fabricated from HTS YBCO, BSCCO, LSCO, and NCCO. In all experiments direction was along CuO planes. With exception NCCO, for materials pronounced zero bias conductance peak observed which decreases with increasing temperature disappears at critical temperature. These results can be explained by presence dominating d-wave symmetry order parameter resulting in formation energy Andreev bound...
We have measured the temperature dependence of in-plane London penetration depth lambda(T) and maximum Josephson current Ic(T) using bicrystal grain boundary junctions electron-doped cuprate superconductor Nd(1.85)Ce(0.15)CuO(4-y). Both quantities reveal an anomalous below about 4 K. In contrast to usual monotonous decrease (increase) (Ic(T)) with decreasing temperature, are found increase decrease, respectively, K resulting in a non-monotonous overall dependence. This behavior was be absent...
Using the NO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> adsorption and Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> passivation technique, we improved thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) then demonstrated stable operation at 200 °C in a vacuum for first time. At °C, drain current I xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> passivated FET remained constant least more...
This letter describes a method to sense slight off-stoichiometry (less than 2%–3%) in the cation ratio [Cu/(Pr+Ce) or Cu/(La+Sr)] of atomic beam fluxes by detecting precipitated impurity phases on surface using reflection high-energy electron diffraction during growth T′-(Pr,Ce)2CuO4 and T-(La,Sr)2CuO4 films. The is based facts that inevitably produces precipitates certain film these oxides, species are solely determined type off-stoichiometry; copper rich lanthanoid rich. Furthermore, it...
The specific heat measurement was performed on recently discovered oxide superconductor Ba 2 YCu 3 O y with T c above liquid nitrogen temperature. A clear jump, at least J/mol K, observed around 92 which provides electronic coefficient of 15 mJ/mol K in the weak coupling limit. obtained γ is rather low view high 90 range. This leads us to postulate that superconductivity this system brought about by some mechanism other than conventional phonon mediated BCS theory.
The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. In this work, diamond grinding thinning was carried out on an ultra-precision machine. performance and minimum wafer thickness were investigated under different conditions. It found that grain depth cut used to characterize overall conditions played important role determination final performance. relationship between subsurface damage ground achieved also revealed.