A5062849067- Welding Techniques and Residual Stresses
- Advanced Welding Techniques Analysis
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Advanced Decision-Making Techniques
- Smart Grid and Power Systems
- Simulation and Modeling Applications
- Metal Forming Simulation Techniques
- Numerical methods in engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- High-Velocity Impact and Material Behavior
- Surface Treatment and Residual Stress
Chongqing University
2021-2023
The single-event effect reliability issue is one of the most critical concerns in context space applications for SiC VDMOS. In this paper, SEE characteristics and mechanisms proposed deep trench gate superjunction (DTSJ), conventional (CTSJ), (CT), planar (CT) VDMOS are comprehensively analyzed simulated. Extensive simulations demonstrate maximum SET current peaks DTSJ−, CTSJ−, CT−, CP VDMOS, which 188 mA, 218 242 255 with a bias voltage VDS 300 V LET = 120 MeV·cm2/mg, respectively. total...
Single-event gate-rupture (SEGR) in the trench vertical double-diffused power MOSFET (VDMOS) occurs at a critical bias voltage during heavy-ion experiments. Fault analysis demonstrates that hot spot is located termination of VDMOS, and gate oxide region has been damaged. The SEGR-hardened with multiple implantation regions proposed simulated using Sentaurus TCAD. are introduced, leading to an increase distance between hole accumulation region, as well decrease resistivity conductive path....
Electromagnetic pulse spot welding technology (EPSW) has great application prospects in the field of electric vehicles due to realization without gasket. The EPSW Cu/Al alloy this article is carried out two steps. first step uses electromagnetic force pre-process aluminum plate punch a hump through forming (EMPF). second realize between and copper plate. This studied effects stamping with discharge voltage 10 kV 15 compared coils different widths. results show: gasket was realized; higher...
For the first time, an analytical model for electric field distribution and breakdown voltage (BV) of a novel siliconon-insulator (SOI) reduced surface (RESURF) laterally double-diffused metal oxide semiconductor (LDMOS) with partial stepped polysilicon compound buried layer (SPCBL) structure is presented. By establishing working out two-dimensional (2D) Poisson equation, device distributions, together potential are derived, BV calculated. According to proposed SP-CBL device, strongly...
The morphologies of the interfaces in electromagnetic pulse welding joints have a significant impact on their bonding strength and therefore garnered attention from researchers. In this study, hydrodynamic model was developed to systematically analyze effects horizontal vertical components velocity interface morphology evolution during welding. An experimental platform with capacity 28 kJ/20 kV constructed utilized perform unidirectional bidirectional collision Al-Cu Al-Al joints. simulation...
The interfacial morphologies of electromagnetic pulse welding joints are closely related to the bonding performance, which has attracted interest in investigations on morphology. In this work, a hydrodynamic model was established systematically analyze effect horizontal component and vertical impact velocity morphology evolution process during welding. A 28 kJ/20 kV magnetic platform built, upon unidirectional bidirectional collision performed obtain Al-Cu Al-Al joints. simulation results...