A5029109308- Silicon Nanostructures and Photoluminescence
- Magnetic properties of thin films
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Magnetic Properties and Applications
- Advanced Materials Characterization Techniques
- Electronic and Structural Properties of Oxides
- Surface and Thin Film Phenomena
- Characterization and Applications of Magnetic Nanoparticles
- Anodic Oxide Films and Nanostructures
- Glass properties and applications
- Luminescence Properties of Advanced Materials
- Advanced materials and composites
- Magnetic and transport properties of perovskites and related materials
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Magnetic Field Sensors Techniques
- Quantum and electron transport phenomena
- Catalytic Processes in Materials Science
Yaroslav-the-Wise Novgorod State University
2002-2024
N. I. Lobachevsky State University of Nizhny Novgorod
2012-2022
Institute for Physics of Microstructures
2003-2019
California State University, Northridge
2019
Saratov State University
2000-2013
Nizhny Novgorod State Pedagogical University
2007
Radiophysical Research Institute
2002
Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) the delta-doped layers obtained by laser corresponding process vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on InGaAs∕GaAs system make it possible control spectrum and electroluminescence intensity. Reducing pressure reactor 25–50Torr allows deposition carried out at reduced temperatures...
We report a study of interlayer exchange interaction in multilayer [Co/Pt]n/Pt/Co structures. The structures consist periodic [Co/Pt]n film with perpendicular anisotropy and thick Co layer an in-plane anisotropy. subsystems are separated by Pt spacer variable thickness. magnetooptical Kerr effect the ferromagnetic resonance measurements show essentially non-collinear state magnetic moments layers strong coupling between subsystems. A simple model based on Landau-Lifshitz-Gilbert equation...
We present a theoretical study of the ferromagnetic resonance in system two coupled magnetic layers. show that an interaction between layers leads to occurrence so-called Fano resonance. The changes shape peak. It introduces peak asymmetry. asymmetry type is defined by sign Therefore, studying peaks, one can define interlayer coupling (ferromagnetic or antiferromagnetic).
The defects in InP epitaxial structures (containing part Pt nanoparticles) and SiGe/Si heterostructures, their electrical behaviour are studied. In pinholes, misfit dislocations were observed the layers. These yielded different anomalies of behaviour, as excess leakage currents, instabilities, anomalous temperature dependence apparent barrier height. It is shown that inspite anomalies, measurements provide useful reliable information about structures.
We report on the first attempt to fabricate arrays of one-dimensional quantum wires from 2D layer InxGa1–xAs/GaAs structures, based a self-organization concept. A decrease in dimensionality electron–hole gas objects interest, which is due 1D electron subsystem transformation layers this structure, detected by shift and narrowing PL spectral lines.
We experimentally study the interlayer interaction in a magnetic multilayer system ferromagnet/insulator/ferromagnet with different spacer thickness. demonstrate that sign and magnitude of can be deduced from FMR peak shape rather than shift. The proposed technique allows studying using single sample (without reference for comparison).