A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end in 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe BiCMOS for fifth generation (5G) is presented. The composed of a power amplifier (PA), low noise (LNA), and single-pole double-throw (SPDT) switch. At mm-wave bands, the traditional SPDT switch limits output transmit...

This letter presents a multiband switchable low-noise amplifier (LNA) in the 0.1- μm GaAs pHEMT process. Employing new varactor-based tunable network as interstage matching circuit, operation bands can be tuned consecutively and cover 5G millimeter-wave frequency N257/N260. The proposed structure functions well without sacrificing noise performance or increasing dc consumption chip area. In entire band from 26.5 to 41 GHz, LNA achieves small-signal gain of over 24 dB figure (NF) less than...

This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX) chipsets in 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe BiCMOS process for high data-rate wireless communication. Both the chips integrate four compact front-end channels 2 notation="LaTeX">$\times $ distribution, distance between adjacent RF pads is less than 1.8...

This brief presents a W-band 6-bit active phase shifter fabricated in 0.13 μm SiGe BiCMOS process. A wideband quadrature signal generator composed of 90-degree hybrid and pair transformers is exploited for low insertion loss superior balance. Conventional architecture used gain control unit replaced by novel inverter-embedded variable amplifier to achieve high complexity. In addition, balun-first combiner with symmetrical layout utilized at the output keep as imbalance I/Q paths possible....

This article presents a 250-GHz SiGe amplifier composed of three differential cascode stages in 0.13-μm BiCMOS technology (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> = 300/500 GHz). The Marchand balun is utilized to implement single-ended signal transformation for its superior performance over the transformer-based at sub-THz frequencies, which has been investigated and...

This article presents a compact 300-GHz transmitter front end manufactured in 130-nm SiGe BiCMOS process. The consists of 240-GHz amplifier multiplier chain (AMC) and modified Gilbert mixer. Limited by the space between top two thick metal layers process, coupling coefficient coils, which form transformer-based balun, is usually small at subterahertz (THz). Therefore, vertical or horizontal single-turn balun will exhibit large insertion loss around 300 GHz. In this work, self-shielded...

This article presents a broadband sub-terahertz (THz) power amplifier (PA) with low-loss four-way combiner. The proposed combiner consists of an improved zero-degree (ZDC) and three-conductor Marchand balun simultaneously achieving matching combining. adopts dual- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$LC$ </tex-math></inline-formula> tank technique by merging two resonators, it can be equivalent...

This article presents a fully integrated 220 GHz sliding-intermediate frequency (sliding-IF) quadrature transmitter (Tx) and receiver (Rx) chipset supporting high-order modulation schemes in 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe bipolar junction transistor the complementary metal-oxide-semiconductor (BiCMOS) technology with...

This article presents a compact 150-GHz transmitter with 12-dBm Psat and 17-dB conversion gain. D-band is composed of frequency doubler, micromixer, two-stage gm-boosting power amplifier (PA), an on-chip dielectric resonate (DR) antenna. At sub-terahertz, the output gain are limiting factors for transmitter's performance. In this work, topology implemented to achieve by taking advantage base inductor without sacrificing PA's stability. The PA enhanced proposed phase compensation method....

A compact E-band frequency tripler with broadband performance is implemented in a 0.13 μm SiGe BiCMOS technology. high pass filter and transformers impedance matching were used fully differential cascode topology to improve the harmonic suppression performance. Besides, RF virtual ground capacitor parallel base of CB transistor was proposed buffer stage that can enhance output power by more than 1.7 dB. Followed amplifier, exhibits measured 3-dB bandwidth ranging from 69 86 GHz peak 9.9 dBm...

A 220-GHz power amplifier (PA) with high gain, output power, and efficiency for a transceiver system is presented in this letter. At terahertz (THz) sub-terahertz (sub-THz) bands, the maximum available gain/maximum stable gain (MAG/MSG) of device degrades rapidly, which increases difficulty high-gain high-efficiency PA design. In letter, gm-boosting technique analyzed used differential cascode (CC) topology to boost single stage. Metal–oxide–metal (MOM) capacitors are reduce insertion losses...

This letter presents a 230-GHz high-gain amplifier implemented in 0.13- μm SiGe BiCMOS technology. The consists of single-ended cascode (CC) stage for noise optimization and two differential CC stages power capacity consideration. A symmetrical peripheral interconnection with self-shielded bypass capacitors gm-boosting technique realization is employed to overcome the low inherent gain. components transistors are investigated parallel-inductor-based reduction adopted improve figure (NF)....

This brief presents an adaptive-bias power amplifier (PA) in 0.13 μm SiGe BiCMOS for fifth-generation (5G) communication. An improved adaptive bias circuitry with small area and overhead is exploited to fulfill the stringent linearity requirement while maintaining high back-off efficiency. The parasitic effects of peripheral interconnections large-scale transistors are investigated, a symmetrical layout bilateral bypass capacitors adopted suppress imbalance. proposed PA covers N257 N258...

This paper presents a differential W-band power amplifier combined with LC balun in commercial 0.13 μm SiGe BiCMOS technology. The proposed consists of one cascode stage and two common-emitter stages. In the stage, bypass capacitor at base node upper transistor, which is sensitive to stability, analyzed. Measured gain over 15 dB achieved from 74 84 GHz peak value 17.4 80 GHz. input output return losses are better than 8 10 dB, respectively. saturated (Psat) 1-dB compression (P1dB) measured...

Due to the low atmospheric attenuation and considerably wide bandwidth resource, W-band frequencies have become a strong candidate for various applications, such as high data-rate communication, radar, imaging. Advanced SiGe BiCMOS technologies provide low-cost high-integrated solution multichannel chipsets, which are desirable implement phased-array systems. Several highly-integrated phased arrays been demonstrated [1 - 4]. However, most of reported works exhibit small IF (BW)...

Due to self-reflection and self-saturation phenomena, high linearity is important the low noise amplifier (LNA) used in millimetre wave radar system. This paper presents a high-linearity W-band LNA fabricated 0.13 μm SiGe BiCMOS process. Optimization of transistor size current density, together with inter-stage matching technique active core implemented achieve gain performance. The provides maximum small-signal 24 dB, 21.3 dB 16.4 at -40°C, 25°C 125°C. measured NF lower than 5.5 from 73 86...

Abstract A Gilbert mixer for the application of a D band transmitter is presented. In work, differential pair below mixing quad replaced by an active balun. source resistor introduced to improve balance performance Owing resistor, LO‐to RF isolation also improved. At output end, transformer‐based balun used transform signal single‐end and realize wideband match. The circuit designed on 130 nm SiGe BiCMOS technology with f T /f max 300/500 GHz. compact covers 5 GHz intermediate frequency (IF)...

This brief proposes a variable gain power amplifier (VG-PA) with stable linearity for n257/n258 frequency band applications. A switched-capacitor array is proposed in the cascode (CC) circuit to control while maintaining linearity. compensation inductor introduced between common-emitter (CE) and common-base (CB) transistors suppress phase variation. For proof of concept, VG-PA was fabricated 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Due to the increasing demand for high-data-rate transmission in wireless communication, terahertz (THz) and sub-terahertz (sub-THz) frequency bands have attracted great attention their rich spectrum resources. Silicon-based technologies with high <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_{T}/f_{\max}$</tex> provide a low-cost solution integrate transmitters receivers sub-THz communication systems [1]–[4].

Spoof surface plasmon polaritons (SSPPs) are highly confined electromagnetic (EM) waves in microwave and millimeter‐wave frequencies, mimicking the (SPPs) optical frequency, which have many potential applications plasmonic integrated circuits systems. Herein, a miniaturized ultrathin SSPP structure is proposed by etching specially designed periodic elements on coplanar waveguide (CPW), has been successfully used to realize filters with high‐efficiency transmissions from direct current...

This study presents a compact 154 GHz receiver fabricated in 0.13 µm SiGe BiCMOS process, which is composed of three-stage low-noise amplifier and an improved micromixer. In order to mitigate the intrinsic DC RF imbalance basic micromixer, resistor compensation implemented at one branch paths, achieves superior performance. Consisting common-emitter two differential cascade stages, separate small-signal gain 21.8 dB 155 with 3 bandwidth 22 GHz. The entire exhibits maximum conversion 23.8...

A 52.5GHz-66GHz frequency tripler using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.13\mu\mathrm{m}$</tex> SiGe HBT process is presented, which adopts a single balanced structure, with high conversion gain up to 14.3dB. maximum saturated output power xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{P}_{\text{sat}})$</tex> 12.3dBm@57GHz measured, 3-dB bandwidth of 13.5GHz (22.7 <sup xmlns:xlink="http://www.w3.org/1999/xlink">%</sup>...