A5079340925- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
- Optical Coatings and Gratings
- Neuroscience and Neural Engineering
- Semiconductor materials and devices
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Thin-Film Transistor Technologies
- Photonic Crystals and Applications
- SARS-CoV-2 detection and testing
- solar cell performance optimization
- 3D IC and TSV technologies
- Advanced Semiconductor Detectors and Materials
- Photorefractive and Nonlinear Optics
- GaN-based semiconductor devices and materials
- Advanced X-ray Imaging Techniques
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Antenna and Metasurface Technologies
- Image Processing Techniques and Applications
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Silicon Nanostructures and Photoluminescence
- CCD and CMOS Imaging Sensors
Bilkent University
2023-2024
Khalifa University of Science and Technology
2018-2023
Fluorinated additives in PEDOT:PSS slow organic solar cell degradation and the underlying mechanisms potentials are discussed.
Abstract This work provides useful insights into the development of HfO 2 -based memristive systems with a p-type silicon bottom electrode that are compatible complementary metal–oxide–semiconductor technology. The results obtained reveal importance top selection to achieve unique device characteristics. Ag/HfO /Si devices have exhibited larger memory window and self-compliance On other hand, Au/HfO displayed substantial cycle-to-cycle variation in ON-state conductance. These characteristics...
Abstract This paper presents a deep learning-driven portable, accurate, low-cost, and easy-to-use device to perform Reverse-Transcription Loop-Mediated Isothermal Amplification (RT-LAMP) facilitate rapid detection of COVID-19. The 3D-printed device—powered using only 5 Volt AC-DC adapter—can 16 simultaneous RT-LAMP reactions can be used multiple times. Moreover, the experimental protocol is devised obviate need for separate, expensive equipment RNA extraction in addition eliminating sample...
This study investigates the resistive switching (RS) behavior of Ag/HfO2(3 nm-thick)/SiO x (interfacial-layer)/Si devices. The findings are drawn from a systematic electrical and material characterization fabricated Based on current-time (I-t) current-voltage (I-V) measurements, it is inferred that both metal oxygen ion migration play significant role in events, leading to bipolar unipolar modes depending biasing scheme. results demonstrate two competing mechanisms taking place when voltage...
Single-layer antireflective coating (SLARC) materials and design for GaAs1_xPx/Si tandem cells were analyzed by TCAD simulation. We have shown that optimum SLARC thickness is a function of bandgap, thickness, material quality top GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> P xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Sisubcell. Cells are fractions x = 0, 0.17, 0.29, 0.37, ARC materials: Si...
Silicon (Si)-based integrated photonics is considered to play a pivotal role in multiple emerging technologies, including telecommunications, quantum computing, and lab-chip systems. Diverse functionalities are either implemented on the wafer surface ("on-chip") or recently within ("in-chip") using laser lithography. However, depth degree of freedom has been exploited only for single-level devices Si. Thus, monolithic multilevel discrete functionality missing bulk. Here, we report creation...
We propose a wavelength-scale metal-clad III–V semiconductor cavity coupled to silicon-on-insulator (SOI) waveguide with integrated feedback stub for external tuning of the Q factor. consider typical InP/InGaAs on SOI and demonstrate more than 5-fold Q-factor improvement in agreement that predicted by coupled-mode theory. From additional thermal analysis, we prove improved heat dissipation can be realized engineering layer thicknesses without sacrificing much optical performance.
This work demonstrates a low-power, light-weight, and cost-efficient vacuum pressure sensor air leak detector based on 2 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times2$ </tex-math></inline-formula> Cu/HfO <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> / notation="LaTeX">$\text{p}^{+}$ -Si memristor device. The operating principle of the proposed relies monitoring off-state resistance (...
Abstract An accurate and computationally simple phase shifting interferometry (PSI) method is developed to reconstruct maps without a priori knowledge of the shift. Previous methods for random PSI either do not address general sources error or require complex iterative processes increased computational time. Here we demonstrate novel that able extract using only Fourier transform (FT). With spatial FT analysis, randomly phase-shifted data reordered allow performing temporal on intensity,...
Silicon-based integrated photonics holds the promise of revolutionizing key technologies, such as telecommunications, computing, and lab-on-chip systems. One can achieve diverse functionalities in two ways: on wafer surface ("on-chip") or within its bulk ("in-chip"), latter gaining recognition due to recent advancements laser lithography. Until recently, 3D in-chip writing has only been utilized for single-level devices, leaving a vast potential monolithic multilevel functionality silicon...
Temperature-dependent capacitance–voltage and conductance–voltage measurements of 200-nm-thick germanium telluride (GeTe) thin films deposited via direct current magnetron sputtering were investigated. Measurements performed across a temperature range 27–357 °C, with sweep voltage values from −20 to +20 V at an operating frequency 1 MHz. An amorphous–crystalline transition (Tc) 197 °C was found. Below Tc, the GeTe highly resistive, their capacitance insensitive applied bias temperature....
Surface texturing in thin-film solar cells provides a promising way of addressing the loss components due to reflection and poor light absorption inside cells. In this work, we study suppression performance different submicron-scale periodic surface morphologies through two dimensional (2D) finite-difference time-domain (FDTD) computations. The broadband response is investigated at interfaces, air/glass glass/TCO (transparent conductive oxide), for spectral range 300-2500 nm. A Drude-Lorentz...
This article describes a method that enables reflectance spectroscopy of small semiconductor samples using an integrating sphere, without the use additional optical elements. We employed inexpensive sample holder to measure different through 2-, 3-, and 4.5-mm-diameter apertures applied mathematical formulation remove bias from measured spectra caused by illumination holder. Using proposed method, fabricated expensive or rare materials and/or low-throughput processes can be measured. It also...
In this work, we present a memristor with thin film (~100-nm-thick) of high-atomic-number material in Cu/HfO2/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{p}^{+}$ </tex-math></inline-formula> -Si stack to detect gamma-ray irradiation doses as low ~30 mGy. The device leverages the unique properties memristors, which exhibit change resistance state upon applying an external electrical bias. This...