We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement synapse function in neuromorphic systems. Our findings show that multilevel states conductance are achieved by varying measurement conditions related formation and rupture conductive filament. Furthermore, abrupt set switching behavior RRAM leads an unchanged state, leading degradation accuracy pattern recognition. Thus, we demonstrate linear potentiation (or depression) under using effect...

We propose a HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to conductance states. By optimizing the pulse condition, we obtained 32 levels for both potentiation and depression. Furthermore, field-effect transistor simulated using multiple The simulation results show linear symmetric can be by applying optimum...

In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based device showed high selectivity (~10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ) and steep slope (<;5 mV/decade). observed switching in programmable metallization cell occurred due to the spontaneous rupturing silver...

Abstract This study demonstrates an integrate and fire (I&amp;F) neuron using threshold switching (TS) devices to implement spike‐based neuromorphic system. An I&amp;F can be realized the hysteric voltage switch characteristics of a TS device. To investigate effects various on behavior, neurons are compared three different types device: NbO 2 ‐based insulator‐to‐metal transition (IMT) device, B–Te‐based ovonic Ag/HfO atomic‐switching The results show that off‐state resistance time determine...

Multilevel cell (MLC) storage technology is attractive in achieving ultrahigh density memory with low cost. In this letter, we have demonstrated 3-bit per characteristics a TaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based RRAM. By analyzing the key requirements for MLC operation mainly switching uniformity and stability of resistance levels, an engineered stack based on thermodynamics top electrode/(vacancy reservoir/defect...

In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that MLC relates size conductive filament involved in movement oxygen...

In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability between the different levels is required especially in resistive random access memory (RRAM), which prone variability mainly due its intrinsic nature of defect generation and filament formation. this study, we have thoroughly investigated a TaOx-based nanoscale (&amp;lt;30 nm) RRAM operated MLC mode. It found that not only depends on conductive size but also strong function oxygen vacancy...

In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared examined. First, carry out field turn-on process to form Ag filaments created as a consequence of sequential ions from bottom electrode. During filament formation process, it is observed that show time exponential voltage temperature with different...

In this letter, we demonstrate the conductive-bridging RAM (CBRAM) with excellent multi-level cell (MLC) and linear conductance characteristics for an artificial synaptic device of neuromorphic systems. Our findings show that inherent CBRAM can achieve MLC as a product integer unit conductance. However, uncontrolled metal-ion injection into switching layer results in significant degradation uniformity, leading to classification accuracy. Thus, introduce multi-layer configuration (Cu/HfO <sub...

The scaling and 3-D integration issues of NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems Pt electrode, we tested devices conventional electrodes (TiN W). By adopting 10nm-thick TiN bottom electrode low thermal conductivity, could significantly reduce current insulator-metal transition (I-M-T) due to heat confinement...

The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using Ag filament formed during motion ions, steep-slope (5 mV/dec.) with higher selectivity (∼105) could be achieved. Because faster diffusivity atoms, which are inside solid-electrolytes, resulting easily dissolved under low current regime, where possesses weak stability. We found that dissolution process further...

We investigate the effects of high-pressure hydrogen annealing (HPHA) on W/ferroelectric Al:HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /interface layer (IL)/Si stacks. With HPHA, degradation in remnant polarization is observed pristine state due to ferroelectric domain pinning. However, after wake-up, a comparable by de-pinning. In addition, HPHA improves quality current and low interface trap density are maintained up 10 <sup...

In this letter, we demonstrate a steep slope field-effect transistor (FET) using threshold switching (TS) device. The Ag/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based TS device reported in our previous work was implemented series with the drain region of transistor. Since has an abrupt transition between OFF- and ON-states vice versa, 5-mV/decade subthreshold high ON/OFF-current ratio (I...

We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, TiN/Pr0.7Ca0.3MnO3-based exhibiting excellent was used control weight by applying various amplitudes and cycles. Furthermore, potentiation depression with same spikes can be achieved negative positive pulses, respectively. By adopting complementary...

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. doped samples shows excellent electrical characteristics such as small variability for 3-bit multilevel per cell (MLC), low power operation good retention properties. Compared control sample, improved can be explained by induced filament confinement.

In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated oxide (Cu2O) layer simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of directly confirmed transmission electron microscopy energy dispersive spectroscopy line profiling. observed TS occurred because spontaneous self-rupturing unstable...

In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable reproducible conductance states integer multiples fundamental obtained by optimizing voltage rate Ti-diffusion barrier (DB) at Cu/HfO2 interface. Owing to controlled diffusion Cu ions Ti-DB optimized rate, through which it was possible control time delay ion reduction, more than seven levels discrete were clearly observed....

To improve the classification accuracy of an image data set (CIFAR-10) by using analog input voltage, synapse devices with excellent conductance linearity (CL) and multi-level cell (MLC) characteristics are required. We analyze CL MLC TaOx-based filamentary resistive random access memory (RRAM) to implement device in neural network hardware. Our findings show that number oxygen vacancies filament constriction region RRAM directly controls characteristics. By adopting a Ta electrode (instead...

Abstract The development of selector devices is essential for the implementation dense memory arrays. Ovonic threshold switch (OTS) have gained interest as high‐performance selectors, but their material complexity and low thermal stability remain concerns. effect element compositions its types on binary telluride‐based OTS are investigated to develop selectors that meet simple composition high requirements while ensuring OFF‐state leakage current ( I OFF ). Through a careful control Te in...

In this study, we investigate a proton-based three-terminal (3-T) synapse device to realize linear weight-update and I-V linearity characteristics for neuromorphic systems. The conductance states of the 3-T can be controlled by modulating proton concentration in WOx channel. Therefore, estimate dynamic change channel region, which directly affects synaptic behaviors. Our findings indicate that supply an excess number protons from SiO2-H electrolyte low diffusivity result asymmetric...

A 3D high-density switching device is realized utilizing titanium oxide, which the most optimum material, but not practically demonstrated yet. The 1S1R (one ReRAM with developed device) exhibits memory characteristics a significantly suppressed sneak current, can be used to realize applications.

In this letter, we demonstrate a self-limited conductive-bridging random access memory (CBRAM) that removes the necessity for external current compliance in one selector-one resistor (1S1R) architecture. The standard Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (GST) is used as CBRAM switching layer. addition, Te-rich GST also considered. Their performance then compared. Both...

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed exhibits outstanding performance such as high ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), fast operating speed of <10 ns (transition time <2 and delay <8 ns), endurance (109), thermal stability (>450 °C). The observed is caused by the relatively small atomic size C, compared Te, which can effectively suppress segregation...

Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that current during SET process caused by parasitic capacitance. In this letter, we observed a different type RESET process. The was confirmed to have endurance RRAM. We also demonstrated relation between and intrinsic capacitive elements each state Finally, an optimized pulse shape proposed minimize experimentally verified significantly improve variability in typical RRAM...

AgTe/TiN/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS AgTe top electrode showed the high on-current, since Te allows an extraction of Ag out filament. TiN liner also inserted at AgTe/TiO interface prevent in-diffusion into TiO layer during back-end-of-line process. Finally,...