A5024665674- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Optical Coatings and Gratings
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Simulation and Modeling Applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Industrial Technology and Control Systems
- Metal and Thin Film Mechanics
- Advanced Surface Polishing Techniques
- Semiconductor Quantum Structures and Devices
- Advanced ceramic materials synthesis
- Plasmonic and Surface Plasmon Research
- Vietnamese History and Culture Studies
- Advanced Computational Techniques and Applications
- Copper Interconnects and Reliability
- Refrigeration and Air Conditioning Technologies
- Molecular Junctions and Nanostructures
- Manufacturing Process and Optimization
- Advanced Algorithms and Applications
Technical University of Denmark
2013-2024
Ørsted (Denmark)
2013-2024
Chongqing Public Health Medical Center
2020
Chongqing Medical University
2020
Chinese Academy of Sciences
2015
East China University of Political Science and Law
2014
Guangxi University
2013
Qi2
2010
Chalmers University of Technology
2009
Institute for Advanced Engineering
2009
Significant enhancement of photoluminescence in ALD Al<sub>2</sub>O<sub>3</sub> passivated porous 6H-SiC.
Abstract A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The structures were prepared using an anodic oxidation etching method and passivated atomic layer deposited (ALD) Al 2 O 3 films. An impressive enhancement PL intensity observed in SiC with ALD , especially at low temperatures. At temperatures below 150 K, two prominent...
The impedance characteristics of high-speed oxide-confined 850-nm vertical-cavity surface-emitting lasers have been studied with the aim identifying importance device parasitics for modulation bandwidth. Through equivalent circuit modeling, it is confirmed that a major impact on bandwidth and each individual element has investigated. According to extrapolation parameters derived from S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub>...
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence.The photoluminescence results were interpreted using a band diagram with Fermi-Dirac statistics.It is shown that N B concentrations range 10 18 cm -3 samples exhibit most intense luminescence when concentration difference (n-type) about 4.6x10 .Raman spectroscopy studies further verified doping type for...
Surface plasmonics from metal nanoparticles have been demonstrated as an effective way of improving the performance low-efficiency light emitters. However, reducing inherent losses remains a challenge. Here we study enhancement properties by Ag for InGaN/GaN quantum-well structures. By using thin SiN dielectric layer between and GaN manage to modify improve surface plasmon coupling effects attribute this improved scattering at emission wavelength. The results are interpreted numerical...
Abstarct We report for the first time a NUV light to white conversion in N-B co-doped 6H-SiC (fluorescent SiC) layer containing hybrid structure. The surface of fluorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation 20 nm thick Al 2 O 3 , photoluminescence intensity from was significant enhanced factor more than 12. Using moderate thickness (~10 µm), high-quality emission realized combining independent emissions blue-green and yellow bulk...
Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that obtained by nitrogen boron doping acts as using semiconductor. The luminescence room temperature, shows broad band characteristic donor-to-acceptor pair recombination. Photoluminescence intensities carrier...
We have theoretically investigated the influence of antireflective sub-wavelength structures on a monolithic white light-emitting diode (LED).The simulation is based rigorous coupled wave analysis (RCWA) algorithm, and both cylinder moth-eye been studied in work.Our results show that structure enhances light extraction efficiency over entire visible range with an enhancement up to 26 %.Also for first time our best knowledge, color rendering index (CRI) correlated temperature (CCT) LED...
Development of antibiotic resistance is a major challenge for antibiotics as an effective treatment approach infectious diseases and pathogenic microbes with to will become difficult be treated. Therefore, new therapy method, which safe can inactivate effectively without developing resistance, highly needed. Ultraviolet irradiation well known its ability microbial inactivation it widely used in sterilization inanimate objects based on conventional ultraviolet light sources. Meanwhile,...
We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the efficiency. The impact excitation power density on factor is investigated. obtain an by a 2.3 at 756 W/cm2, and 8.1 1 W/cm2. A Purcell up 26 estimated fitting experimental results theoretical model for factor.
Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric Ag nanoparticles (NPs) are combined provide both light extraction internal quantum enhancement for InGaN/GaN quantum-well light-emitters. By fabricating nano-rod pattern on the GaN surface, an optical coating that improves is obtained, furthermore has refractive index which blue-shifts...
Abstract We demonstrate a time-efficient and low-cost approach to fabricate Si 3 N 4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method SiC with coating are formed via dry etching thin film deposition process. By using this method, significant broadband surface antireflection considerable omnidirectional luminescence enhancement obtained. The experimental observations then supported by numerical simulations. It believed that our...
Abstract The overuse of antibiotics is accelerating the bacterial resistance, and therefore there a need to reduce amount used for treatment. Here, we demonstrate in vitro that specific wavelengths narrow range around 296 nm are able eradicate bacteria biofilm state (grown 24 hours) more effectively, than combination irradiation even better, introducing novel concept light assisted . investigated wavelength was 249 338 with an approximate step 5 nm. consists UV treatment followed by...
In the present work, antireflective sub-wavelength structures have been fabricated on fluorescent 6H-SiC to enhance white light extraction efficiency by using reactive-ion etching method.Broadband and omnidirectional antireflection characteristics show that with suppress average surface reflection significantly from 20.5 % 1.01 over a wide spectral range of 390-784 nm.The luminescence intensity could be enhanced in whole emission angle range.It maintains an enhancement larger than 91 up...
An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated.The nanopatterning process more time-efficiency than the e-beam lithography or nanoimprint process.The influences reactive-ion conditions and deposited film thickness to structure profile its corresponding surface reflectance have been systematically investigated.Under optimal experimental conditions, average in range...
Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge embedded a SiO2 matrix were formed complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition annealing. Different sizes prepared analyzed transmission electron microscopy with...
We demonstrate a light-extraction approach using whispering gallery resonators array. The wavelength-scale resonant dielectric nanospheres support modes, which can be coupled with the confined waveguide modes inside bulk material, thus dramatically improving light extraction. Broadband enhancement across entire visible spectral range is achieved by exciting three low-order and low-quality-factor resonances. As an example, broadband extraction of about 50% obtained for emission fluorescent...
Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid.Scanning electron microscope images show that the dendritic pore formation is anisotropic, which has lateral and vertical rates.Strong photoluminescence was observed process optimized terms of time thickness.Enormous enhancement as well redshift broadening spectra after passivation by atomic layer deposited Al 2 O 3 TiO films.No obvious luminescence above crystal band gap,...
In the present work, an approach of fabricating pseudoperiodic antireflective subwavelength structures (ARS) on fluorescent SiC by using self-assembled etch mask is demonstrated. By applying (ARS), average surface reflectance at 6° incidence over spectral range 390-785 nm dramatically suppressed from 20.5% to 1.62%, and hydrophobic with a large contact angle 98° also achieved. The angle-resolved photoluminescence study presents considerable omnidirectional luminescence enhancement integral...
Abstract We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance emission efficiency. A significant enhancement was observed which can be attributed internal efficiency and light extraction The size-dependent strain relaxation effect characterized by photoluminescence, Raman spectroscopy time-resolved photoluminescence measurements. In addition, different MQW studied finite-different time-domain simulations....
An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film applied followed a dry etching process. Size-dependent optical properties the have been investigated. It found that surface reflection in visible spectral range significantly suppressed applying structures. Meanwhile, transmission and absorption could be tuned modifying feature size structure....