A5017346390- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Advanced Scientific Research Methods
- GaN-based semiconductor devices and materials
Universidade de São Paulo
2017
Abstract This study presents the structure of a-SiC thin films on top chromium microlamps, deposited to be a protection layer against oxidation, as well their chemical and structural modifications induced by heating during operation. They were formed with materials plasma-enhanced vapor deposition (PECVD) sputtering, silicon substrates. The SOLEIL synchrotron beamline, used in this work, has microfocus beam, allowing evaluation micro region thermally affected using XANES. results showed...
This work reports the production of microlamps and their structural properties after modifications induced by heating process.Their consists on films deposited Plasma Enhanced Chemical Vapor Deposition (PECVD) sputtering over silicon substrates.The filament, composed a thin chromium wire, is protected against oxidation top layer.Four different materials were used as protective layer: SiC, SiO x N y , AlN TiO 2 .The film heated metallic filament chemical may change, depending time interval...