Elisa García‐Tabarés

ORCID: 0000-0002-4080-376X
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About
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Research Areas
  • solar cell performance optimization
  • Silicon and Solar Cell Technologies
  • Semiconductor materials and interfaces
  • Semiconductor Quantum Structures and Devices
  • Chalcogenide Semiconductor Thin Films
  • Thin-Film Transistor Technologies
  • Nanowire Synthesis and Applications
  • Photocathodes and Microchannel Plates
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and devices
  • Plasma Diagnostics and Applications
  • Laser-Plasma Interactions and Diagnostics
  • Photovoltaic System Optimization Techniques
  • Particle Accelerators and Free-Electron Lasers
  • Metamaterials and Metasurfaces Applications
  • Superconducting Materials and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Quantum Dots Synthesis And Properties
  • Luminescence Properties of Advanced Materials
  • Advanced Semiconductor Detectors and Materials
  • Particle accelerators and beam dynamics
  • Silicon Nanostructures and Photoluminescence
  • Diamond and Carbon-based Materials Research
  • Thermal Radiation and Cooling Technologies
  • Electrostatic Discharge in Electronics

Universidad Carlos III de Madrid
2021-2024

European Organization for Nuclear Research
2017-2022

Universidad Politécnica de Madrid
2011-2016

UNSW Sydney
2014

IMDEA Energy Institute
2012-2013

Universidad Complutense de Madrid
2011

Electron cloud mitigation is an essential requirement for high-intensity proton circular accelerators. Among other solutions, laser engineered surface structures (LESS) present the advantages of having potentially a very low secondary electron yield (SEY) and allowing simple scalability mass production. Two copper liners with LESS have been manufactured successfully tested by monitoring current in dipole magnet SPS accelerator at CERN during 2016 run. In this paper we report on these results...

10.1103/physrevaccelbeams.20.113201 article EN cc-by Physical Review Accelerators and Beams 2017-11-20

Abstract The influence of microgeometries on the Secondary Electron Yield (SEY) surfaces is investigated. Laser written structures different aspect ratio (height to width) a copper surface tuned SEY and reduced its value less than unity. microstructures was methodically controlled by varying laser parameters. results obtained corroborate recent theoretical model reduction as function microstructures. Nanostructures - which are formed inside during interaction with beam provided further in...

10.1038/s41598-019-57160-w article EN cc-by Scientific Reports 2020-01-14

Electron cloud ($e$-cloud) mitigation is an essential requirement for proton circular accelerators in order to guarantee beam stability at a high intensity and limit the heat load on cryogenic sections. Laser-engineered surface structuring considered credible process reduce secondary electron yield (SEY) of surfaces facing beam, thus suppressing $e$-cloud phenomenon within luminosity upgrade LHC collider CERN (HL-LHC). In this study, SEY Cu samples with different oxidation states, obtained...

10.1103/physrevaccelbeams.23.033101 article EN cc-by Physical Review Accelerators and Beams 2020-03-11

Abstract Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination with III‐V compound semiconductors through epitaxial growth by metal‐organic vapor phase epitaxy (MOVPE) instrumental thus, comprehension of sequential stages such processes great importance. During deposition GaAs on p ‐type Ge, formation n/p junctions occurs when As diffuses into Ge. It found that...

10.1002/aelm.202400021 article EN Advanced Electronic Materials 2024-05-23

Abstract The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth III–V on multijunction solar cell structures via metal‐organic chemical vapor deposition (MOCVD) has been analyzed. In particular, impact resulting from four distinct phases within overall MOCVD‐based III–V/Si process were studied: (1) homoepitaxial emitter/cap layer; (2) GaP nucleation; (3) film growth; and (4) thick GaAs y P 1‐y compositionally graded metamorphic buffer growth. During Phase 1 (Si...

10.1002/pip.2703 article EN publisher-specific-oa Progress in Photovoltaics Research and Applications 2015-11-10

The High-Luminosity Large Hadron Collider (HL-LHC) project aims at extending the operability of LHC by another decade and increasing more than a factor ten integrated luminosity that will have collected end Run 3. This require doubling beam intensity reducing transverse size compared to those design. higher brightness poses new challenges for machine safety, due large energy 700 MJ stored in beams, stability, mainly collimator contribution total coupling impedance. A rich research program...

10.3390/coatings10040361 article EN Coatings 2020-04-07

Nd3+-doped LaNbO phosphor thin films were prepared by radio-frequency magnetron sputtering on Si substrates. The effects of a 1% Nd-doping concentration, after annealing at 1200 °C for 12 h, the light-emitting properties sputtered characterized via several experimental techniques and deeply discussed. Photoluminescence characterization showed strong emission peaks typical Nd3+ centers 880 nm 1060 when 325 wavelength laser source was applied. Similar responses detected in La3NbO7 powder...

10.3390/cryst13020159 article EN cc-by Crystals 2023-01-17

Abstract Antireflection coatings (ARCs) are crucial components of high‐efficiency solar cells. A new ARC design philosophy, dubbed high‐low refractive index stacks, has demonstrated good potential to minimize reflection losses for triple‐junction and quadruple‐junction cells in simulations. We have implemented such novel ARCs on GaInP/InGaAs/Ge compared the experimental performances—external quantum efficiency reflectivity—with that identical devices equipping classic double‐layer ARC. For...

10.1002/pip.3608 article EN Progress in Photovoltaics Research and Applications 2022-07-13

Interband Plasmonics Structural color generation driven by plasmonic nanostructures is nowadays mostly based on archetypal metals such as Au and Ag. In article number 2302130, Carlota Ruiz de Galarreta, Rosalia Serna, co-workers demonstrate how single-element, non-conventional interband materials, bismuth, can be successfully nanostructured towards the realization of both gap-plasmon metasurfaces Fabry–Pérot cavities for subtractive displays. This work demonstrates potential bismuth a...

10.1002/adom.202470033 article EN Advanced Optical Materials 2024-04-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and silicon bottom seem to be attractive candidates materialize the long sought-for integration of III–V materials on for photovoltaic applications. One first issues considered in development this structure will strategy create emitter subcell. In study, we explore possibility forming phosphorus diffusion (i.e. exposing wafer PH3 MOVPE reactor) still obtain good surface morphologies achieve successful heteroepitaxy as occurs...

10.1088/0022-3727/46/44/445104 article EN Journal of Physics D Applied Physics 2013-10-16

With the final goal of integrating III–V materials to silicon for tandem solar cells, influence metal–organic vapor phase epitaxy (MOVPE) environment on minority carrier properties wafers has been evaluated. These will essentially determine photovoltaic performance bottom cell in a III–V-on-Si device. A comparison base lifetimes obtained different thermal processes carried out MOVPE reactor Czochralski out. The effect formation emitter by phosphorus diffusion also

10.1143/jjap.51.10nd05 article EN Japanese Journal of Applied Physics 2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and silicon (Si) bottom seem to be attractive candidates materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such would offer cost breakthrough PV technology, unifying low efficiency potential multijunction cells. The optimization properties in flat-plate technology is well-known; nevertheless, it has been proven that behavior substrates different when processed an MOVPE reactor...

10.1063/1.4753821 article EN AIP conference proceedings 2012-01-01

The manufacturing of high-efficiency III-V on Si multijunction solar cells needs the development hybrid, i.e., adapted to both families materials, cell processing techniques, able extract full photovoltaic potential subcells. This fact especially impacts silicon rear surface tandem, which cannot receive treatments commonly used in single-junction industry [Al-back field (BSF), thermal SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ,...

10.1109/ted.2015.2498527 article EN IEEE Transactions on Electron Devices 2015-11-23

Abstract The formation of a fissured copper surface by picosecond pulsed laser irradiation is combined with functional coatings consisting Ti and amorphous carbon layers or Ti–Zr–V compound film to fabricate surfaces the maximum secondary electron yield being as low 0.4. By structural spectroscopic analysis formed it demonstrated that both enclose nanostructures generated redeposition metal structures from laser‐induced plasma plume, keeping initial topography intact. This allows an...

10.1002/admi.202201671 article EN Advanced Materials Interfaces 2022-11-06

This work reviews both theoretically - using numerical simulations with Silvaco TCAD- and experimentally several key features for the design optimization of Si bottom subcell its integration on III-V multijunction solar cells. We have focused 1) p-n junction, i.e. emitter base configurations; 2) impact BSF layer other alternatives point-contact rear metallization back surface passivation; 3) role GaP/Si interface in device performance.

10.1109/pvsc.2013.6744283 article EN 2013-06-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and silicon bottom seem to be attractive candidates materialize the long sought-for integration of III-V materials on for photovoltaic applications. Such would offer cost breakthrough technology, unifying low efficiency potential multijunction cells. In this study, we analyze several factors influencing performance subcell dual-junction, namely, 1) formation emitter as result phosphorus diffusion that takes place during...

10.1109/pvsc.2011.6186071 article EN 2011-06-01

An investigation of the mechanical properties high-purity niobium single crystals is presented. Specimens were cut with different crystallographic orientations from a large grain disk and uniaxial tensile tests conducted at strain rates between 10-4 103 s-1. The logarithmic rate sensitivity for oriented close to center axis inverse pole figure (IPF) ~0.14 all rates. failure (ranging 0.4 0.9) very sensitive crystal orientation maximal ~10-2 s-1 an IPF. high anisotropy observed quasi-static...

10.1016/j.msea.2020.140258 article EN cc-by Materials Science and Engineering A 2020-09-09

Integration of GaP layers on silicon substrates using AsH3 pre-exposure followed by a PH3-based epitaxial growth allows the development very promising processes for photovoltaic industry, although many routines this approach suffer from reproducibility issues when transferred to new system, leading poor quality layers. This fact reveals lack knowledge mechanisms behind formation most common planar defects (stacking faults and microtwins) their dynamics GaP/Si Metal Organic Vapor Phase...

10.1016/j.apsusc.2022.155578 article EN cc-by-nc-nd Applied Surface Science 2022-11-08

Electron cloud mitigation is an essential requirement for accelerators of positive particles with high intensity beams to guarantee beam stability and limited heat load in cryogenic systems. Laser Engineered Surface Structures (LESS) are being considered, within the High Luminosity upgrade LHC collider at CERN (HL-LHC), as option reduce Secondary Yield (SEY) surfaces facing beam, thus suppressing electron phenomenon. As part this study, a 2.2 m long Beam Screen (BS) LESS has been tested...

10.1088/1742-6596/1067/8/082017 article EN Journal of Physics Conference Series 2018-09-01
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