A5011101847- Advanced Memory and Neural Computing
- Microwave Engineering and Waveguides
- Ferroelectric and Negative Capacitance Devices
- Advanced Antenna and Metasurface Technologies
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Full-Duplex Wireless Communications
- VLSI and Analog Circuit Testing
- Phase-change materials and chalcogenides
- Semiconductor Lasers and Optical Devices
- Advanced Power Amplifier Design
- Antenna Design and Analysis
- Chalcogenide Semiconductor Thin Films
- Solid-state spectroscopy and crystallography
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Photoreceptor and optogenetics research
- Interconnection Networks and Systems
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Microwave and Dielectric Measurement Techniques
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
- Millimeter-Wave Propagation and Modeling
Shanghai Jiao Tong University
1993-2025
The GeTe phase-change RF switch with Ag conductive filament (CF) as heater is fabricated. CF can effectively reduce the energy consumption of switch. In particular, set low 19.2 nJ to durability test, resistance ratio exceeds three orders magnitude and remains almost constant over 1000 cycles. insertion loss based on less than 0.8 dB isolation greater 20 up 67 GHz. cut-off frequency high 15 THz. This work demonstrates that modulated be used for phase change material (PCM), providing a new...
Three RF switches and a phase shifter are proposed using the conductive bridging random access memory (CBRAM) technique. The fabrication process is developed with Nafion membrane on high-resistivity silicon substrate. equivalent circuit model established for each memristive switch. have been validated by good agreement achieved among simulated, measured, modeled results. experimental results show that series planar switch has ON-state insertion loss (IL) below 1.69 dB OFF-state isolation...
The RF switch is a key component in radar and wireless communication front-end systems. A non-volatile memristive proposed with the Copper/Nafion/Gold structure on coplanar waveguide. Its parasitic effect compensated design potential fabrication process explored. Good performance predicted by full-wave simulations up to 10 GHz, including ON-state insertion return losses better than 0.54 25 dB, respectively, OFF-state isolation higher 22.8 dB. promising applications of expected for artificial...
In order to achieve the characteristics of non-volatility and low power consumption, a memristive RF switch is proposed on microstrip line with good performance up 5 GHz. Based Conductive bridging random access memory (CBRAM) technology, this uses metal-insulator-metal (MIM) structure, Copper/Nafion/Au specifically. Then, reconfigurable bandpass filter designed at 0.91 1.0 GHz ON-/OFF-state switches, respectively. A 180° reflective type phase shifter switches. These devices may push envelope...
In this article, various RF circuits and systems with memory elements are discussed. The non-volatility of can be used to design novel reconfigurable the abilities self-learning evolution. A switch copper/Nafion/gold structure, a tunable bandpass filter switches, smart antenna memcapacitor-based phase shifters, concept computational neural network presented potential realization technologies also provided. expect open door many promising intelligent applications in future.
A RF switch based on the conductive bridge random access memory (CBRAM) technique is proposed and fabricated a high-resistivity silicon (HRS) substrate. The CBRAM-based can maintain its ON/OFF state without continuous biasing, leading to ultralow power consumption potentially. Experimental equivalent circuit results show provides relatively low ON-state insertion loss of less than 1.2 dB up 67 GHz. OFF-state isolation over 10 dB. retention switching characteristics memristive are tested. It...
This paper presents a reconfigurable filtering switch based on stub-loaded resonators (SLRs). The resonance conditions of SLRs are obtained using the odd-/even-mode analysis. mechanism switching and reconfiguration is then described. By introducing two signals at symmetrical positions SLR, excited odd mode will be canceled out. Controlling access terminal grounding resistors stub enables detuning even without affecting circuits. In off-state, both resonant modes detuned, resulting in an...
Intelligent RF circuits and systems can potentially be implemented with memory devices. The characteristic of a memcapacitor its application to band are discussed. Then, phase shifter is proposed using the transmission lines loaded memcapacitors. shift over 360° achieved low insertion loss when properly selecting states A smart antenna system incorporated shifters designed. main beam adjusted direction arrival incident wave so as achieve an optimal reception. applications expected various
The mode-selective transmission line (MSTL) has excellent performance due to its wide bandwidth and low loss, which is characterized by the effect. In this article, a skew-symmetric slotted waveguide (SSSW) proposed, whose dominant mode also exhibits interesting effect similar that of MSTL. It investigated SSSW performs quasi-transverse electromagnetic (TEM) at frequency quasi-TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> high...
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$A$</tex> Ka-band power amplifier with Doherty architecture is designed in 0.15-μm GaAs pHEMT technology. The output combiner optimized II-type impedance inverting networks to replace λ/4 inverters for broadband characteristic from 23 27.5 GHz under large signal analysis. design equations are provided. proposed realizes a gain of 12.5∼15.3 dB small operation and 25.6∼26.3 dBm saturation power....
The dielectric parameters of the SU-8 3050 material are characterized with substrate integrated waveguide (SIW) cavities. developed fabrication process is presented for SIW structures on 80 µm thick layer. cavities different sizes designed and fabricated. relative permittivity loss tangent extracted to be 3.14 0.05 in Ka band, respectively, which validated by good agreement between simulated measured results.
Abstract In this article, some aspects reflecting the status of Chinese research on integrated optics are briefly reviewed.