A5072465699- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Photovoltaic System Optimization Techniques
- Quantum Dots Synthesis And Properties
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Ga2O3 and related materials
- Spectroscopy and Laser Applications
- Optical Coatings and Gratings
- Advanced oxidation water treatment
- Photorefractive and Nonlinear Optics
- 2D Materials and Applications
- Industrial Gas Emission Control
Jiangsu Maritime Institute
2025
Arizona State University
2014-2019
Swiss Center for Electronics and Microtechnology (Switzerland)
2018-2019
East China University of Science and Technology
2018
South China Normal University
2017
École Polytechnique Fédérale de Lausanne
2010-2015
University of Antwerp
2015
Zhejiang Chint Electrics (China)
2013
École Normale Supérieure - PSL
2012
Monolayers of group VI transition metal dichalcogenides possess direct gaps in the visible spectrum with exception MoTe2, where its gap is suitably located infrared region but stability particular interest, as tellurium compounds are acutely sensitive to oxygen exposure. Here, our environmental (time-dependent) measurements reveal two distinct effects on MoTe2 monolayers: For weakly luminescent monolayers, photoluminescence signal and optical contrast disappear, if they decomposed, yet...
We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art zinc oxide known for their exceptional light trapping properties, conversion efficiencies up to 12.0% are achieved micromorph tandem junction cells. Excellent incoupling results in a remarkable summed short-circuit current density 25.9 mA/cm2 amorphous top cell and...
The mechanisms controlling the degradation of p–i–n perovskite solar cells in reverse bias are identified using various optoelectronic and microstructural characterization techniques.
Tandem photovoltaic devices based on perovskite and crystalline silicon (PK/c-Si) absorbers have the potential to push commercial single junction beyond their current efficiency limit. However, scale-up industrially relevant sizes is largely limited by fabrication methods which rely evaporated metallization of front contact instead industry standard screen-printed silver grids. To tackle this challenge, we demonstrate how a low-temperature paste applied screen-printing process can be used...
Abstract Increasing the conductivity of polycrystalline zinc oxide films without impacting transparency is a key aspect in race to find affordable and high quality material as replacement indium‐containing oxides. Usually, ZnO film provided by doping electron concentration, detrimental transparency, because free carrier absorption. Here we show that hydrogen post‐deposition plasma treatment applied prepared metalorganic low‐pressure chemical vapor deposition allows relaxation constraints...
Electron transport in Sb-doped SnO 2 (ATO) films is studied to unveil the limited carrier mobility observed sputtered as compared other deposition methods.Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony oxygen atmosphere optimized for reactive sputtering.The decreases 24 cm V -1 s 6 when increasing doping level 0 7 at.%, lowest resistivity of 1.8 × 10 -3 Ω corresponding 12 which obtained 3 at.% ATO.Temperature-dependent Hall effect...
We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating morphology state-of-the-art zinc electrodes, known their outstanding light properties, via ultraviolet nanoimprint lithography. As result high electron mobility and excellent near-infrared transparency oxide, short-circuit current density improved with respect to tin electrodes. assess potential further...
The quest for increased performances in thin-film silicon micromorph tandem devices nowadays requires an increase of current density. This can be achieved with thin cells by combining both robust cell design and efficient light management schemes. In this paper, we identify three key requirements the transparent conductive oxide electrodes. First, strong scattering into large angles is needed on entire useful wavelength range: A front electrode texture enough features shown to grant a high...
A major hindrance to the development of devices integrating III-V materials on silicon, where it is an active component device, preservation its electronic quality. In this contribution, we report our effort identify mechanism behind severe decrease in bulk minority-carrier lifetime silicon after heteroepitaxial growth gallium phosphide, molecular beam epitaxy (MBE) system. We that drop occurs at a threshold temperature 500 °C; assign increased recombination rate extrinsic, fast-diffusing...
Bi2O2Se, as the n-type counterpart of p-type BiCuSeO, has garnered considerable attention. The lower carrier concentration leads to reduced electrical conductivity, prompting extensive research efforts aimed at enhancing its performance. This study prepared Bi2−3x(CeTiSn)xO2Se (x = 0, 0.02, 0.03, and 0.04) ceramics using a combination high-energy ball milling cold isostatic pressing techniques. Results demonstrated that incorporation multiple elements led an increase in within Bi2O2Se...
Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate replacement indium-based TCOs. Here, we show a hydrogen (H2)-plasma post-deposition treatment improves amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found H2-plasma performed at substrate temperature 50 °C reduces resistivity films by 57% and increases absorptance only 2%. Additionally, delays known formation particles...
This paper gives new insights into the role of both microstructure and interfaces in microcrystalline silicon (μc-Si) single-junction solar cells. A 3-D tomographic reconstruction a μc-Si cell reveals 2-D nature porous zones, which can be present within absorber layer. Tomography thus appears as valuable technique to provide microstructure. Variable illumination measurements enable study negative impact such zones on cells performance. The influence defective material mitigated by suitable...
Optimized transparent conductive oxide front electrodes are vital to further increase the efficiency of thin-film silicon solar devices. We report details on fabrication multiscale textured zinc substrates and their implementation in amorphous silicon/microcrystalline tandem (micromorph) Such allow separate optimization light trapping top bottom cells, efficient decoupling transparency conduction. show particular need for sharp, nanoscale texturing antireflection cell. also that smooth,...
Formation of high-conductivity metal contacts at low temperatures expands optoelectronic device opportunities to include thermally sensitive layers, while reducing expended thermal budget for fabrication. This includes high-efficiency silicon heterojunction solar cells with intrinsic amorphous layers. Efficiencies these are limited by series resistance; the primary cause this is relatively high resistivity low-temperature silver paste used form front-grid metallization. In paper, we report...
III-V/silicon solar cells which have an active silicon bottom cell are promising for multi-junction applications. In such structures, a high minority carrier lifetime in the bulk substrate is necessary. Annealing wafers at temperature (> 500 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sup> C) molecular beam epitaxy (MBE) high-vacuum chamber revealed significant degradation. this work, we developed practical method to maintain Si lifetime....