A5012495382- Thin-Film Transistor Technologies
- Copper-based nanomaterials and applications
- ZnO doping and properties
- Silicon and Solar Cell Technologies
- Electrocatalysts for Energy Conversion
- Gas Sensing Nanomaterials and Sensors
- Laser-Ablation Synthesis of Nanoparticles
- Gold and Silver Nanoparticles Synthesis and Applications
- Advanced battery technologies research
- Nanomaterials and Printing Technologies
- Chalcogenide Semiconductor Thin Films
University of Catania
2022-2024
Institute for Microelectronics and Microsystems
2022-2023
In this work we report on ultra-thin Zirconium doped In2O3 transparent conductive films grown at room temperature via RF-Magnetron co-sputtering. Samples from 15 nm to 90 thick, and low Zr atomic concentration (0.6–0.9 at.%), were annealed T = 200 °C after the deposition. The phase-transition amorphous crystalline, confirmed by XRD measurements, leads an improvement of both electrical optical properties. thinnest film (15 nm) shows resistivity as 5 × 10−4 Ωcm, with carrier mobility 20...
Cu nanoparticles were produced by using solid-state dewetting (dry) of a 1.3 nm layer or laser ablation solid target (wet) in acetone and methanol. The morphology chemical composition the investigated as function synthesis methods their key parameters annealing temperature (200-500 °C) liquid environment during ablation. then embedded transparent conductive oxide (TCO) films aluminum-doped zinc (AZO) zirconium-doped indium (IZrO); TCObott/Cu nanoparticle/TCOtop structures synthesized with...
In this work, we report the growth of MoO3 nanowires (NWs) by thermal evaporation with aim evaluating their use as catalysts for oxygen evolution reaction (OER) in water splitting application. Growth was performed on two different kinds substrates, Si(100) and Si(111), at temperatures between 200 400 °C. The effect such experimental parameters morphological, structural, compositional properties investigated. deposited materials were characterized situ reflection high-energy electron...
In this work we report on ultra-thin Zirconium doped In2O3 transparent conductive films grown at room temperature via RF-Magnetron co-sputtering. Samples from 15 nm to 90 thick, and low Zr atomic concentration (0.6-0.9 at.%), were annealed T = 200 °C after the deposition. The phase-transition amorphous crystalline, confirmed by XRD measurements, leads an improvement of both electrical optical properties. thinnest film (15 nm) shows resistivity as 5 x 10-4 Ωcm, with carrier mobility 20...
Indium oxide (In2O3) is one of the most used materials for synthesis transparent electronics devices and currently tin-doped indium (ITO) dominates field Transparent Conductive Oxides applications, from ICT to photovoltaics. In this work we present a study on responses upon formation, stabilization, point defects induced with different methods. After deposition In2O3 thin films via RF magnetron sputtering, treatments such as Ion Implantation (I.I.), Ultraviolet (UV) irradiation Sun exposure...