About
Contact & Profiles
A5052092257
Research Areas
- Magnetic Properties and Applications
- Shape Memory Alloy Transformations
- Magnetic and transport properties of perovskites and related materials
- Creativity in Education and Neuroscience
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
Technical University of Darmstadt
2019-2021
10.1016/j.actamat.2021.117390
article
EN
Acta Materialia
2021-10-13
Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</sub> /Pt/Au) stacks were irradiated with 1.1-GeV Au ions fluences between 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> and xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> ions/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> evaluated regarding pristine resistance, forming voltage, data retention. Only...
10.1109/tns.2019.2908637
article
EN
cc-by
IEEE Transactions on Nuclear Science
2019-05-04
10.1016/j.actamat.2021.117157
article
EN
Acta Materialia
2021-07-08
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