A5103431466- Advanced Electrical Measurement Techniques
- Semiconductor materials and devices
- Scientific Measurement and Uncertainty Evaluation
- Power Quality and Harmonics
- GaN-based semiconductor devices and materials
- Calibration and Measurement Techniques
- Medical Imaging Techniques and Applications
- Radioactive Decay and Measurement Techniques
- Radiation Detection and Scintillator Technologies
- Ga2O3 and related materials
- Plasma Diagnostics and Applications
- Radiation Therapy and Dosimetry
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Advanced Radiotherapy Techniques
- Ion-surface interactions and analysis
- Magneto-Optical Properties and Applications
- Semiconductor materials and interfaces
- Spectroscopy and Laser Applications
- Physics of Superconductivity and Magnetism
- Magnetic Field Sensors Techniques
- Seismic Waves and Analysis
- Geomagnetism and Paleomagnetism Studies
Research Institute of Economy, Trade and Industry
2024-2025
Chubu University
2023
Matsushita Memorial Hospital
2022
Kyoto University Hospital
2022
Mitsubishi Electric (Japan)
2017-2022
Tokyo Ariake University of Medical and Health Sciences
2022
Mirion Technologies (France)
2022
National Institute of Advanced Industrial Science and Technology
2008-2021
Osaka University
2011-2019
Japan Radioisotope Association
2004-2018
Here we present the guideline for treatment of neuroendocrine tumors using Lu-177-DOTA-TATE on basis radiation safety aspects in Japan. This was prepared by a study supported Ministry Health, Labour, and Welfare, approved Japanese Society Nuclear Medicine. Japan should be carried out according to this guideline. Although is applied Japan, issues protection shown are considered internationally useful as well. Only original version formal document.
Abstract The superior physical and electrical properties of aluminum oxynitride (AlON) gate dielectrics on AlGaN/GaN substrates in terms thermal stability, reliability, interface quality were demonstrated by direct AlON deposition subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN reducing number defects Al 2 O 3 films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal–oxide–semiconductor...
ABSTRACT This paper examines the interplay between sectoral growth compositions, initial inequality, and poverty reduction in Vietnam during 2000s, utilizing disaggregated provincial‐level data. The analysis focuses on differential impacts of industrial agricultural sector alleviation while also assessing moderating role inequality. Employing robust econometric techniques, including nighttime lights as a proxy for outputs coefficient stability tests, we find that is significant driver...
A 10 V programmable Josephson voltage standard (PJVS) circuit with a maximum output of 20 and microwave bias 18.5 GHz was designed fabricated. Although an attempt made to improve the fabrication yield for PJVS circuit, it not sufficiently large reproducibly fabricate perfect chip without any defects. The redundant arrays were additionally integrated increase voltage, which contributed in number available chips under limited yield. Fortunately, most defective had zeroth Shapiro step, while...
The structure of high pressure phases, $\text{selenium}\text{\ensuremath{-}}{II}^{\ensuremath{'}}$ $(\mathrm{Se}\text{\ensuremath{-}}{II}^{\ensuremath{'}})$ and sulfur-II (S-II), for $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{Se}}_{8}$ (monoclinic Se-I) $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{S}}_{8}$ (orthorhombic S-I) was studied by powder x-ray diffraction experiments. $\mathrm{Se}\text{\ensuremath{-}}{II}^{\ensuremath{'}}$ S-II were found to be isostructural belong the...
We performed powder x-ray experiments on hydrogen sulfide $({\mathrm{H}}_{2}\mathrm{S})$ under high pressure at room and low temperatures. Phase V appearing above $27\phantom{\rule{0.3em}{0ex}}\text{GPa}$ temperature was confirmed by x ray to be associated with a molecular dissociation. The dissociation first observed $150\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ higher around $43\phantom{\rule{0.3em}{0ex}}\text{GPa}$. Two new low-temperature high-pressure phases ${\text{III}}^{\ensuremath{'}}$...
524,288 NbN-based Josephson junctions were integrated to produce a programmable voltage standard (PJVS) on die of 15mm × 15mm, and the PJVS circuit was cooled 10K using cryocooler operated with current margin about 1.0mA. Although an output 10V required for standard, designed generate maximum 17V because it difficult avoid reduction due defects. perfect chip without any defect rarely fabricated, high that generated at least fabricated fabrication yield larger than 30%. The also improved by...
SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of investigated analyzing high-frequency quasistatic capacitance-voltage characteristics metal-oxide-semiconductor capacitors. It is found that addition N into the oxide increases both interface state density (Dit) positive fixed charge (Qf). After forming gas...
Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation ozone (O3) ambient under optimized conditions. The distribution uniform depth direction, composition controllable over wide range (0.5–32%), thickness could be precisely controlled. Physical analysis based synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS)...
We have been developing a new implementation of quantum voltage noise source (QVNS), an integrated QVNS (IQVNS), for Johnson thermometry (JNT) in thermal metrology. designed IQVNS chip based on rapid single flux (RSFQ) technology. A general formula the output power spectrum has derived by using Fourier analysis method, which shows that is calculable with sufficiently small errors practical JNT measurements.
A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the process very small needs be extracted from an extremely large offset due probing laser signal. In order suppress components while amplifying high-frequency modulated components, uses high-speed LEFM demodulating...
We present a Johnson noise thermometry (JNT) system based on an integrated quantum voltage source (IQVNS) that has been fully implemented using superconducting circuit technology. To enable precise measurement of Boltzmann's constant, IQVNS chip was designed to produce intrinsically calculable pseudo-white calibrate the JNT system. On-chip real-time generation pseudo-random codes via simple circuits produced pseudo-voltage with harmonic tone interval less than 1 Hz, which one order magnitude...
Abstract Background Osimertinib is one of the standard first-line treatments for advanced non-small cell lung cancer in patients with epidermal growth factor receptor (EGFR) mutations, because it achieves significantly longer progression-free survival (PFS) than conventional (hazard ratio: 0.46). However, efficacy and safety osimertinib as a treatment aged ≥75 years remain unclear. Methods This phase II study was performed to prospectively investigate elderly EGFR mutation-positive cancer....
Silicon (Si) and its alloys, such as silicon oxides (SiOx) nitrides, are indispensable thin film materials for the fabrication of large-area electronic devices. The goal present study is to develop a highly efficient deposition technology good-quality hydrogenated amorphous Si (a-Si), microcrystalline (µc-Si), SiOx films on flexible polymer substrates. For this purpose, we have been using atmospheric-pressure (AP) plasma excited by 150 MHz very high-frequency (VHF) power. changes thickness...
A 10-V programmable Josephson voltage standard (PJVS) circuit including 524 288 vertically stacked NbN/TiN/NbN junctions was successfully fabricated without any defects. The chip cooled with a compact cryocooler at temperature of 9.8 K and generated an output 17.3 V the first Shapiro step height 1.0 mA under microwave irradiation 16 GHz. Furthermore, design having high increased number available chips for PJVS. fabrication yield chip, which generates greater than 10 V, 36%, is ten times that...
We are developing a programmable Josephson voltage standard (PJVS) system based on compact cryocooler. The is capable of generating two arbitrary waveforms by use dual-output PJVS (DO-PJVS) device. Owing to this feature the system, low-frequency characteristic in ac-dc transfer difference thermal converter has been investigated using 90° addition method. evaluation great importance for connecting conventional standards and new Josephson-based ac standards. To fulfill purpose, dual-heater...
We precisely evaluated a single-chip 10-V programmable Josephson voltage standard (PJVS) system based on closed-cycle refrigerator by directly comparing it with conventional system. The PJVS chip fabricated using NbN/TiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /NbN junction technology was used. result of the measurement showed good agreement combined uncertainty 3.1 parts in 10 <sup...
We present the design improvement of an integrated quantum voltage noise source (IQVNS) aimed at low-cost user-friendly Johnson thermometers with high accuracy. A problem in our previous IQVNS was mainly associated lax synchronization low- and high-frequency clock signals, making whole system complicated less robust. have employed on-chip generation low-frequency clocks by downconverting a reference so that operates single clock. Counterflow-clocking architecture has been introduced both...
Pressure-induced structural phase transition of spin ladder compound SrCu2O3 was investigated by synchrotron X-ray powder diffraction with a diamond anvil cell (DAC). The change characterized buckling the Cu2O3 plane in rung direction ladder. structure high-pressure found to be essentially same as that CaCu2O3. Application an external pressure 3.4 GPa therefore affected manner chemical (internal) does.
A purified Si film is prepared directly from metallurgical-grade (MG) by chemical transport using sub-atmospheric pressure H 2 plasma. The purification mechanism based on the selective etching of atomic H. It demonstrated that concentrations most metal impurities (e.g., Fe, Cr, Ni, Ti, and Mn) in are acceptable range for solar-grade material, or below determination limit several impurity measuring methods employed this study. From infrared absorption measurements product produced reaction...
Raman imaging eliminates the need for staining procedures, providing label-free to study biological samples. Recent developments in stimulated scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack detectors suitable MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due direct laser light. In this paper, we present complementary metal-oxide semiconductor...
Purpose: Point-like <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sup> Na radioactive sources have been widely used for checking radiation detectors that measure annihilation photons and evaluating PET scanners. We developed new types of point-like are expected to be more symmetric than conventional source in the angular distribution emitted photons. The purpose this study is use Monte Carlo simulation investigate basic characteristics...