We have employed the aerosol deposition method (ADM) to direct-write 39-µm-thick polycrystalline films of yttrium iron garnet at room temperature onto sapphire a rate 1–3 µm/min as first step toward integration into microwave magnetic circuits. The resulting randomly oriented are composed fractured compact nanosized crystallites. Upon postdeposition sintering 1280 °C density and properties become closer those bulk. These results suggest that ADM shows promise for depositing very thick high...

A transistorized marginal oscillator type of nuclear resonance probe is described. The main advantages transistor use are in obtaining portability, eliminating external power sources, and low cost. sensitivity stability equaled that a standard transition vacuum tube circuit when compared using protons water.

We report structural, compositional, and magnetic properties for a commercially available doped barium hexaferrite material produced by Temex Ceramics. The is designed to absorb electromagnetic radiation near the upper edge of Ku frequency band (∼18 GHz) may serve as an important component microwave circuitry. To aid in development such circuits that utilize this or similar materials, we present results raw starting powder, sintered pucks, form film deposited aerosol deposition. find...

Abstract Aerosol deposition (AD) is a thick-film process that can produce films tens to hundreds of micrometers thick with densities greater than 95% the bulk at room temperature. However, precise mechanisms bonding and densification are still under debate. To better understand predict deposition, self-consistent approach employed combines computational fluid dynamics (CFD), finite element (FE) modeling, experimental observation particle impact improve understanding flight, impact, adhesion...

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes are under investigation for further in optoelectronics, photovoltaics, efficient power switching technologies. Alloys of the binary semiconductors allow adjustments band gap, an important semiconductor material characteristic, which is 6.2 eV aluminum nitride (AlN), 3.4 gallium nitride, 0.7 (InN). Currently, highest quality III-nitride films deposited by metalorganic chemical vapor...

The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent substrates from powder mixtures by the aerosol method is presented. Advantages include ability form dense, nanocrystalline films up hundreds microns thick at room temperature high rate variety substrates. Deposition achieved creating pressure gradient that accelerates micrometer-scale particles in an velocity. Upon impact...

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed synchrotron x-ray methods. carried out in a thin film facility installed beamline X21 the National Synchrotron Light Source Brookhaven Laboratory G3 Cornell High Energy Source, University. Measurements grazing incidence small angle scattering (GISAXS) during initial cycles revealed broadening near diffuse specular rod development...

We have employed aerosol deposition (AD) to deposit 39 μm thick polycrystalline films of yttrium iron garnet at room temperature onto sapphire a rate 1-3 μm/min as an initial investigation utilizing AD for fabricating ferrite-integrated on-chip inductors. characterize the structural and magnetic properties as-received starting powder, as-deposited film, pressed puck formed from powder. Results show that are comprised randomly oriented grains with closely resemble coating gold single-turn...

Plasma enhanced atomic layer epitaxy (PEALE) is a layer-by-layer crystalline growth technique that based on pair of self-terminating and self-limiting gas-surface half-reactions, in which at least one half-reaction involves species from plasma. The inclusion plasma generally offers the benefit substantially reduced temperatures greater flexibility tailoring gas-phase chemistry to produce varying film characteristics. benefits plasmas provide come cost complex array process variables often...

Magnetic materials and components play a critical role in the technology we use our daily lives. Many things, from electric motors to data storage, radar, communication systems, rely on properties of magnetic materials. The inherent physics provides us with signal processing control that either cannot be replicated or is difficult replicate electric-field-based devices alone.

We present initial magnetic and structural characterization results of pressing barium hexaferrite pucks under the influence a field using custom-built uniaxial press. The press can be operated up to 500 pounds load inside 30 kG axially uniform field. details on system specifications operation procedures as well in 0, 25, or find that pressed 25 show similar properties but are significantly magnetically crystallographically textured along direction used during compared no-field pucks. For...

The authors present an in situ study of the effect nitrogen plasma pulse time on temporal evolution surface morphology InN growth a-plane sapphire at 250 °C by assisted atomic layer epitaxy (ALEp). was monitored real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements 0.8°. Nitrogen (tp) varied between 15 and 30 s 5-s steps, for all tp, near specular broadens correlated peaks develop evolve along Yoneda Wing (YW). For tp ≥ 20 s, a YW with one length scale evolves....

Aerosol deposition (AD) is a thick-film process that can produce layers up to several hundred micrometers thick with densities greater than 95% of the bulk. The primary advantage AD takes place entirely at ambient temperature; thereby enabling film growth in material systems disparate melting temperatures. This report describes detail processing steps for preparing powder and performing using custom-built system. Representative characterization results are presented from scanning electron...

The surface topological evolution during the growth of indium nitride (InN) by plasma-assisted atomic layer epitaxy (ALEp) on gallium (GaN) (0001) substrates was studied using in situ real-time grazing incidence small-angle x-ray scattering (GISAXS) for 180, 250, and 320 °C temperatures. GISAXS data reveal that ALEp InN GaN this temperature range proceeds a Stranski–Krastanov mode, which 2D–3D transition occurred after 2.3 monolayers 180 °C, 1 monolayer 250 1.5 °C. corresponding initial...

We study single-crystal CeCoIn${}_{5}$ with uniaxial pressure up to 3.97 kbar applied along the $c$ axis. find a nonlinear dependence of superconducting transition temperature ${T}_{c}$ on pressure, maximum close 2 kbar. The also broadens significantly as increases. discuss in terms general trend that decreases anisotropic heavy-fermion compounds they move toward three-dimensional behavior.

In situ synchrotron x-ray studies were employed to develop a fundamental understanding of the low temperature atomic level processes (ALPs) for GaN substrates in methods preparation epitaxy ready surfaces. An emulated gallium flash-off (GFO) ALP, followed by hydrogen clean and subsequent nitridation ALP are studied as function number cycles. The results demonstrate that ideal GFO achieved at higher temperature, 500 °C, only ten cycles needed remove surface oxide result an ordered surface....