A5067517442- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- 3D IC and TSV technologies
- Induction Heating and Inverter Technology
- Multilevel Inverters and Converters
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- HVDC Systems and Fault Protection
- Advancements in Semiconductor Devices and Circuit Design
- Additive Manufacturing and 3D Printing Technologies
- Electronic Packaging and Soldering Technologies
- Advanced Surface Polishing Techniques
- Electrostatic Discharge in Electronics
- Manufacturing Process and Optimization
- Renewable energy and sustainable power systems
- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Recycling and Waste Management Techniques
- Microgrid Control and Optimization
- Nanocomposite Films for Food Packaging
- Wireless Power Transfer Systems
- Low-power high-performance VLSI design
- Photovoltaic Systems and Sustainability
Centre National de la Recherche Scientifique
2016-2025
Université Grenoble Alpes
2016-2025
Institut polytechnique de Grenoble
2009-2025
Laboratoire de Génie Électrique de Grenoble
2014-2023
Université Joseph Fourier
2002-2013
The measurement of the junction temperature with thermosensitive electrical parameters (TSEPs) is largely used by engineers or researchers, but obtained value generally not verified any referential information actual chip distribution. In this paper, we propose to use infrared (IR) measurements in order evaluate relevance three commonly TSEPs insulated gate bipolar transistor chips: saturation voltage under a low current, gate-emitter voltage, and current. TheIR are presented detail an...
The present paper introduces a novel, sustainable approach to produce an eco-friendly Printed Circuit Board (PCB) substrate; substitute for traditional substrates, significantly reduce e-waste. We the prepreg technology, road actual circuit assembly with application studies, life cycle analysis (LCA), and sustainability analysis. flame-retarded prepregs resulting PCB assemblies were based on polylactic acid (PLA), structure is reinforced flax textiles. After copper lamination, subtractive...
This article deals with the conception of a 42V-12V isolated DC-DC converter using new GaN power transistor technology. Those components allow working at higher frequencies compare to classical silicon components. Thus they increasing density converters. Due their high switching frequency, voltage and current commutation speed, imply take care EMC problems, use frequency designed magnetic core, adapt gate drive stage in order increase efficiency reduce losses. paper describes some driver...
Silicon (Si) power devices have dominated the world of Power Electronics in last years, and they proven to be efficient a wide range applications. But high power, frequency temperature applications require more than Si can deliver. With advance technology, Carbide (SiC) Gallium Nitride (GaN) evolved from immature prototypes laboratories viable alternative Si-based high-efficiency high-power density SiC GaN several compelling advantages: high-breakdown voltage, high-operating electric field,...
Sustainability in power electronics is a recent research topic. It takes place among current actions to grasp design choices that enable eco-design and circular economy the domain. This paper shows results analysis of literature review at intersection sustainability without considering reliability study systems. The first part explains scope study. second bibliometric collected publications underlines pioneering position European level. third details state-of-the-art its over four...
A new 3-D power module dedicated to SiC mosfet is presented. It based on printed circuit board embedded die technology and compared with a standard module. After considering the characteristics that contribute optimal switching performances from packaging point of view, both modules are characterized in terms behavior electromagnetic interference emissions. The results show better stray inductances below 2 nH two times less common mode noise.
Silicon (Si) power devices have dominated the world of Power Electronics in last years, and they proven to be efficient a wide range applications. But high power, frequency temperature applications require more than Si can deliver. Wide Band-Gap (WBG) materials such as Carbide (SiC) Gallium Nitride (GaN) were intensively researched developed for due substantial advantages their inherent material properties could realize at device level. The SiC-MOSFET has unique capabilities that make it...
We report a three-terminal breakdown voltage over 3 kV on AlGaN/GaN high electron mobility transistors (HEMTs) grown 6-in. silicon (111) substrate with buffer thickness of 5.5 μm. A local removal all around the drain has been developed in order to suppress parasitic conduction, which enables improving device by more than 200%. This establishes new record for GaN-on-silicon lateral power devices while maintaining low-specific on-resistance about 10 m Ω cm2. Furthermore, performance...
Abstract SiC MOSFETs are currently the most appropriate solution for high‐efficiency conversions at low kilovolts (). For higher voltages, series connection of shows great promise. However, voltage sharing remains a significant technical challenge. This article proposes an active balancing approach stack N MOSFETs, achieved through precise adjustment turn‐off delays based on real‐time feedback. Using analytical model tailored to describe sharing, control method is designed, configured, and...
Among the various solutions for series association of high power IGBTs, active clamping circuit insures both protection and voltage balancing, within good reliability compactness. Therefore, this structure has been chosen to be integrated closed IGBTs. The design leads resolution a compromise between balancing limited additional losses. aim paper is optimise circuit, in order reduce losses, IGBTs as well circuit. This validated 3 kV 400 A test bench, using three 1.7 components series.
The predetermination of the leakage inductances transformers is essential for component designers. Except special winding disposal, usual analytical methods evaluation are ineffective, while finite-element-method simulation requires too much time to be suitable any optimization process. In a previous work, we supplied expression vector potential from which deduced inductance through numerical integration. this paper, an explicit given. This does not appear as series, shorter computing time,...
This paper focuses on a new generation of power modules, trying to optimize the tradeoff between thermal and electromagnetic interference (EMI) managements. At same time, packaging technique is considered in order simplify implementation dies while improving reliability structure. The approach considers hybrid integration dies, one top other, into 3-D power-chip-on-chip configuration. Due this structure, can directly be inserted within electrical plates, with whole structure emulating...
This article analyzes the effects of parasitic capacitances in series connection IGBT, which exist naturally due to gate driver and power circuit geometry. Two solutions, that can be combined, are proposed minimize these order achieve a better voltage balancing. The first one is based on self-powering technique. second vertical structure assembly IGBT connected series. performance offered by two complementary solutions investigated validated three chopper converter. Both simulation...
This paper analyzes the effects of parasitic capacitances in series connection insulated-gate bipolar transistors (IGBTs) on their voltage sharing. These parasitics exist naturally due to gate driver interconnects and power circuit physical architecture. Two solutions, which can be combined, are proposed minimize these order achieve a better balancing. The first one is based self-powering technique. second vertical structure assembly IGBTs connected series. performance offered by two...
A novel method to limit the short-circuit current in distribution network is introduced this study. The limiter a part of cascade H-bridge distribution-static synchronous series compensator (D-SSSC), which placed with line manage power flow loop network. Hence, limitation and management achieved using only one converter. During fault, D-SSSC inverter changed rectifier by turning off converter switches anti parallel diodes. transient thermal analysis verifies that components operate within...
A new three dimensional package based on Printed Circuit Board (PCB) embedded die technology is presented in this paper. The takes advantage of the Power Chip On (PCOC) concept, where commutation cell housed within bus bar, allowing a very low inductance design for up to 0.25 nH. Two key challenges with relate layout and thermal management. Thus, parallelization technique enabling impedance balancing developed validated using four parallel Silicon Carbide (SiC) MOSFETs. Gate circuit...
With the emergence of new power semiconductor devices, switching speeds in converters are increasing.The stray inductances cells must therefore be minimized to limit over-voltages on transistors.One relatively approach, called Power Chip-on-Chip (PCoC), considers integration dies, one top other, directly busbar.This allows for reduction inductance.This paper first presents implementation a PCoC module using classical packaging techniques.Then description different technological steps...
This article presents local shielding techniques applied to a half-bridge inverter leg with the aim reduce common-mode (CM) current noise at converter's dc input. The research study is conducted for 650-V enhancement mode Gallium Nitride power transistor switches. Main contributors of parasitic capacitances referred inverter-leg middle point node are identified. Then, solutions proposed CM emission by these capacitances. Respecting precautions concerning isolation currents leg,...
This paper deals with the problem of paralleling components. First, general investigations concerning influence stray inductances on current and voltage differences between n-paralleled components are presented. Original cabling conditions deduced to insure balanced electrical constraints. Then, a power module involving two paralleled MOSFETs is analyzed. To validate original presented conditions, different choppers, modules have been built, layouts. Experimental simulated results confirm...
Interconnection of medium voltage grids associated to the modulation transmission line impedance can improves system operation and power quality. However it also leads rise short circuit power. To cope with this constraint make new distribution scheme a viable alternative radial in future, investigations on short-circuit limitation particular line's compensator relying series connected Voltage Source Converter (VSC) (also called SSSC for Static Synchronized Series Compensator) has been...
This paper presents a simple, ultra-compact and isolated gate driver system used to drive power switches. Using two legs of CMOS inverter, high frequency transformer zener diodes connected with the switch, this provides an optimal waveform voltage switch on transistor, negative bias during OFF state. In paper, proposed will be theoretically analyzed; simulation experimental results for implemented side MOSFET also showed discussed.
This paper describes a comparative study between traditional and sustainable approaches on high-speed digital electronics design, demonstrating solution similar to modern embedded systems. The system was produced flame retardant 4 (FR4) substrate biosourced biodegradable, printed circuit board (PCB) based polylactic acid (PLA) flax fibers, evaluate the maturity of ecological substrates. first characterized from radio-frequency point view, using resonant cylindrical cavities microstrip line....