A5100763667- Occupational Health and Safety Research
- Nanowire Synthesis and Applications
- Construction Project Management and Performance
- BIM and Construction Integration
- Hydrocarbon exploration and reservoir analysis
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Risk and Safety Analysis
- Semiconductor materials and devices
- Evaluation and Optimization Models
- Infrastructure Resilience and Vulnerability Analysis
- Sustainable Building Design and Assessment
- Geological and Geophysical Studies
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Geological Studies and Exploration
- Photonic Crystals and Applications
- Advancements in Battery Materials
- Advanced Battery Materials and Technologies
- Semiconductor Lasers and Optical Devices
- Fuel Cells and Related Materials
- Evacuation and Crowd Dynamics
- Electrocatalysts for Energy Conversion
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
Southeast University
2016-2025
Southwest Jiaotong University
2025
Yantai University
2023-2024
Hunan University
2023
China Electric Power Research Institute
2023
Beijing Jiaotong University
2023
North China Electric Power University
2023
Xiangtan University
2022-2023
Northeastern University
2019-2022
Chengdu University of Technology
2022
We demonstrate stable, single-frequency output from single, as-fabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet functioning as gain medium and optical resonator, fabricated by top-down technique that exploits tunable dry etch plus anisotropic wet for precise control of the dimensions high material gain. A single-mode linewidth ~0.12 nm >18 dB side-mode suppression ratio are measured. Numerical simulations indicate arises strong mode...
The hierarchical Cu2 S@NC@MoS3 heterostructures have been firstly constructed by the high-capacity MoS3 and high-conductive N-doped carbon to co-decorate S hollow nanospheres. During heterostructure, middle layer as linker facilitates uniform deposition of enhances structural stability electronic conductivity. popular hollow/porous structures largely restrain big volume changes active materials. Due cooperative effect three components, new with dual heterogenous interfaces small voltage...
Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, dopant clustering reveals material quality comparable that planar LED QWs. The position-dependent CL emission wavelength nonpolar side-facet QWs semipolar top is correlated with composition.
A solar cell based on a hybrid nanowire–film architecture consisting of vertically aligned array InGaN/GaN multi-quantum well core–shell nanowires which are electrically connected by coalesced p-InGaN canopy layer is demonstrated. This unique structure allows for standard planar device processing, solving key challenge with nanowire integration, while enabling various advantages the absorbing region such as higher indium composition InGaN layers elastic strain relief, more efficient carrier...
GaN-InGaN core-shell nanowire array devices are characterized by spectrally resolved scanning photocurrent microscopy (SPCM). The spatially external quantum efficiency is correlated with structure and composition inferred from atomic force microscope (AFM) topography, transmission electron (STEM) imaging, Raman microspectroscopy, (SPCM) maps of the effective absorption edge. experimental analyses coupled finite difference time domain simulations to provide mechanistic understanding spatial...
GaN nanowires oriented along the nonpolar a-axis were analyzed using pulsed laser atom probe tomography (APT). Stoichiometric mass spectra achieved by optimizing temperature, applied dc voltage, and pulse energy. Local variations in measured stoichiometry observed correlated with facet polarity scanning electron microscopy. Fewer N atoms detected from Ga-polar surfaces due to uncorrelated evaporation of N2 ions following adatom diffusion. The differences Ga ion behaviors are considered...
With the rapid development of urbanization in China, a vast number subway projects are under construction and planned many cities. However, complexities environment inherently bring about uncertainties risk factors. Understanding inherent properties critical success factors (CSFs) will contribute significantly to construction. From this perspective, paper aims identify CSFs for safety management This study screened preliminary through literature review in-depth interviews with experts China....