A5084606471- Radio Frequency Integrated Circuit Design
- CCD and CMOS Imaging Sensors
- Particle accelerators and beam dynamics
- Semiconductor Lasers and Optical Devices
- Particle Accelerators and Free-Electron Lasers
- Advanced Power Amplifier Design
- Optical Network Technologies
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Superconducting Materials and Applications
- Wireless Communication Networks Research
- Microwave Engineering and Waveguides
- Advanced Optical Sensing Technologies
- Advanced Wireless Network Optimization
- Advanced Photonic Communication Systems
- Scheduling and Optimization Algorithms
- Semiconductor Quantum Structures and Devices
- Thin-Film Transistor Technologies
- Image Processing Techniques and Applications
- Gyrotron and Vacuum Electronics Research
- Semiconductor materials and devices
- Wireless Networks and Protocols
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Wireless Communication Techniques
- Neuroscience and Neural Engineering
Osaka University
2011-2017
High Energy Accelerator Research Organization
1991-2017
Mitsubishi Electric (Japan)
1994-2016
Renesas Electronics (United States)
2011
Mitsubishi Group (Japan)
1993-2010
Fujitsu (Japan)
1998-2009
King Mongkut's Institute of Technology Ladkrabang
2006
University of Yamanashi
2002-2005
Texas Instruments (Japan)
2005
Texas Instruments (United States)
1987-2005
The machine commissioning of KEKB started in December 1998 and its operation was terminated at the end June 2010 to upgrade SuperKEKB. In this paper, we summarize history show achievements made there.
A miniaturized linearizer using a parallel diode with bias feed resistance has been proposed. The positive gain and negative phase deviations can be used as for power amplifiers. These characteristics are provided by nonlinearity of the movement point caused voltage drop at resistance. By applying this to an S-band amplifier, improvement adjacent channel leakage 5 dB power-added efficiency 8.5% have achieved /spl pi//4-shift QPSK modulated signal.
The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the charges from photodiode when it saturates. 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel, 1/3" VGA fabricated 0.35 mu/m 3M2P process achieves 100 dB dynamic range with no lag, 0.15 mV/sub rms/ random noise and mV fixed pattern noise.
A novel series diode linearizer has been developed for mobile radio power amplifiers. It is composed of a with parallel capacitor, which provides positive amplitude and negative phase deviations the increase input power, can compensate AM-AM AM-PM distortions Applying this to 1.9 GHz MMIC amplifier Japanese Personal Handy-phone System (PHS), an improvement adjacent channel leakage (ACP) up 5 dB achieved /spl pi//4-shifted QPSK modulated signal.
This paper describes 1.3-mum AlGaInAs multiple-quantum-well semi-insulating buried-heterostructure distributed-feedback lasers for high-speed direct modulation. Combination of large differential gain quantum wells and reduction active region achieved 25 40 Gb/s modulation with the device having cavity length 150 mum. The whose Bragg wavelength is longer than peak showed characteristics superior temperature characteristics. relaxation oscillation frequency this was 15 GHz higher up to 70degC....
This paper describes the design and experimental results for a 3.2-V operation single-chip AlGaAs/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (IMMIC) power amplifier GSM900 DCS1800 dual-band applications. The following two new techniques are proposed implementing amplifier. One is an on-chip HBT bias switch which in turn switches between 900 1800 MHz. configuration allows using high turn-on voltage of 1.3 V HBT's to operate with 3-V low supply...
The next generation of fuzzy expert systems will combine techniques such as logic programming, theory, and neural networks to improve performance productivity. This article examines the practical use two hybrid architectures; combination fusion.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
This article presents a global shutter (GS), stacked digital pixel sensor (DPS) to meet the ultra-low power, ultra high dynamic range (HDR) requirements for battery-powered, always-on mobile computer vision (CV) applications. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.6~\mu \text{m}$ </tex-math></inline-formula> DPS is partitioned into two layers; dual conversion gain (CG) with...
Uncooled 25 Gbit/s direct modulation of 1.3 µm DFB lasers is demonstrated. The 150 µm-long semi-insulating buried-heterostructure AlGaInAs quantum-well show clear eye-openings with dynamic extinction ratio 5 dB up to 70°C. 13 km singlemode-fibre transmission experiments using the devices low power penalty within between and These characteristics are first achievement by directly modulated lasers.
To respond to the high demand for dynamic range imaging suitable moving objects with few artifacts, we have developed a single-exposure image sensor by introducing triple-gain pixel and low noise dual-gain readout circuit. The 3 μm is capable of having three conversion gains. Introducing new split-pinned photodiode structure, linear full well reaches 40 ke-. Readout under highest gain condition 1 e- Merging two signals, one analog gain, other single exposure rage (SEHDR) signal obtained....
An immune system has powerful abilities such as memory, recognition and learning to respond invading antigens, artificial immunity-based systems are expected be applicable many engineering applications. This paper proposes an optimization algorithm imitating the solve scheduling problem. The proposed is shown effective for multi-optimization a problem with variable batch sizes.
A miniaturized linearizer using a parallel diode has been developed. It is composed of and resistance for d.c. bias feed. The utilizes nonlinear resistive element the diode. In this paper, operation principle described. provides high temperature stability readiness voltage adjustment. BY applying to an S-band power amplifier, improvement ACP 5 dB added efficiency 8.5% achieved /spl pi//4-shift QPSK modulated signal.
The crystal structure of halloysite, despite being one the most commonly occurring clay minerals on Earth's surface, remains elusive. This paper reports a multi-methodological study to shed more light atomic arrangement halloysite from Olkhon Island, Lake Baikal, Russia, which has prismatic morphology. It been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), selected-area (SAED) and, in particular, high-resolution transmission (HRTEM), reveal its and formation...
A row-parallel CMOS sensor for triangulation-based range imaging includes embedded winner-take-all circuits detecting location of the brightest spot in each row. The originates from a planar light continuously sweeping across scene. delivers more than 100 maps per second.
In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Improvement of device performance and reduction thermal resistance with larger gate pitch enabled 1.4 times density compared the previous work [1]-[2]. 167 W output was extracted from a single chip 7 W/mm density. 2-chip amplifier have recorded 220 C-band, which is highest ever reported for higher bands.
We propose a novel cell-AGC technique for an ATM-cell-based burst optical receiver on 156-Mb/s subscriber system. The controls transimpedance gain according to the burst-cell power and enables reception of signals with low extinction ratio. In addition, realize high sensitivity, we developed amplifier that is stable under changes in ambient conditions deviations transistor characteristics IC. By adopting these techniques CMOS preamplifier IC, detectable difference between cells was enlarged...
In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with 2.8-μm backside-illuminated (BSI) pixel lateral overflow integration capacitor (LOFIC) architecture is presented. The was capable of high conversion gain readout 160 μV/e− for low light signals while large full-well capacity 120 ke− obtained signals. combination LOFIC and the BSI technology allowed optical performance without degradation caused by extra devices structure. realized 70% peak quantum...
We have measured and corrected chromatic $X\mathrm{\text{\ensuremath{-}}}Y$ coupling at an interaction point to improve the luminosity of KEKB. beam position betatron oscillations induced by kicker using turn-by-turn monitors. A phase space structure reconstructed provides us not only Twiss parameters but also information regarding coupling. determined each momentum deviation from designed energy. Skew sextupole magnets are used correct
The stacking structure of tubular halloysite, which is easily damaged by electron-beam radiation, has been investigated high-resolution transmission electron microscopy (HRTEM) using a new TEM with computer-assisted minimal-dose system. equipped high-speed beam blanker the specimen beam-irradiated only during image acquisition recording media. Using few images taken CCD camera short exposure time (0.04 s), operations such as area search and brightness adjustment are completed system, can...
A novel amplitude and phase linearizing technique for microwave power amplifiers has been developed. It employs a series feedback amplifier with large source inductance as predistortion linearizer, which provides positive negative deviations input can compensate AM-AM AM-PM distortions of amplifiers. Applying this to 1.9 GHz MMIC use in the Japanese Personal Handy-Phone System (PHS), an improvement adjacent channel leakage (ACP) up 7 dB achieved when it is used /spl pi//4-shift QPSK signal.<...