A5016777357- Physics of Superconductivity and Magnetism
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Superconducting and THz Device Technology
- Iron-based superconductors research
- Copper Interconnects and Reliability
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Metal and Thin Film Mechanics
- Superconductivity in MgB2 and Alloys
Shanghai Institute of Microsystem and Information Technology
2020-2021
University of Chinese Academy of Sciences
2018-2020
Chinese Academy of Sciences
2020
We have developed a 6-kA/cm superconducting integrated circuit fabrication process toward large-scale single flux quantum digital circuits. To evaluate the reliability and controllability, set of control monitors (PCMs) for monitoring design parameters was designed tested. Fabrication parameters, example, film thicknesses etched depths layers, were measured by testing specific patterns during fabrication. Design such as critical current density J <sub...
In this study, we investigate different technologies to measure the specific capacitances C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> of Nb/Al-AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Nb Josephson junctions. They involve measuring Fiske mode resonance in long junctions, superconducting quantum interference device (SQUID) resonance, and plasma resonance. We find a logarithmic relationship between junction its critical...
Energy-efficient rapid single flux quantum (ERSFQ) circuits are often considered to have two working states including ERSFQ (zero static power dissipation) and RESFQ (resistive energy-efficient SFQ) state. In our previous research, a new state called MIDSFQ has been also found in which the biasing JJs cannot return non-voltage after dynamic process. Both result extra dissipation should be avoided if possible. this paper, we investigate characteristics of these three explain principle using...
Ion beam etching (IBE) is introduced in the fabrication process developed from Nb03 SIMIT, for of Al-AlOx layer. However, we found that IBE creates fences at edges etched profiles because redeposition Al. To solve this problem, systematically investigated yield fenceless patterns and junction quality as a function ion incidence angle. The increases angle decreases, 0° causing least fence formation. dependence was explained by formation model two-dimensional algorithm. Given un-etched foots...
The precise timing analysis of superconducting integrated circuits, particularly cells in a standard cell library, is essential for high-yield large-scale integration design. In particular, the delay time individual crucial parameter. Unfortunately, its value not solely determined by alone but instead influenced adjacent cells. this article, we found that unstable mainly caused bias current redistribution with certain type input/output port, which thus requires buffer units stabilization....