A5032831569- Topological Materials and Phenomena
- 2D Materials and Applications
- Rare-earth and actinide compounds
- Advanced Condensed Matter Physics
- Graphene research and applications
- Magnetic properties of thin films
- ZnO doping and properties
- Magnetic Properties of Alloys
- Quantum and electron transport phenomena
- Advanced Battery Materials and Technologies
- Magnetic and transport properties of perovskites and related materials
- Perovskite Materials and Applications
- Advancements in Battery Materials
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Thermoelectric Materials and Devices
- Iron-based superconductors research
- High-pressure geophysics and materials
- Diamond and Carbon-based Materials Research
- Advanced battery technologies research
- Magnetic Properties and Synthesis of Ferrites
- Quantum Mechanics and Non-Hermitian Physics
- Semiconductor materials and devices
- Quantum, superfluid, helium dynamics
Fujian Normal University
2021-2025
National Laboratory of Solid State Microstructures
2025
Nanjing University
2025
Centre of Excellence for Advanced Materials
2021-2022
Fuzhou University
2021
Sulfur defective V<sub>5</sub>S<sub>8</sub>/CNFs is synthesized by an electrospinning method, followed sulfuration treatment. The obtained composite exhibits attractive capacities and ultra-stable cycling performances when using as anode materials for sodium-ion potassium-ion batteries.
The inverse spin Hall effect is a critical method for detecting conductivity. Unearthing the physical relationship between electronic structure and conductivity conducive to establishing an intrinsic link microstructure macroscopic phenomena. Here, we report MnBi2Te4 as ideal candidate: stable, inversion symmetry-broken magnetic topological insulator investigating correlation signal reversal structure. valence band exhibits significant Rashba splitting, with magnitude reaching up 4.61 eV/Å....
We firstly achieved significant regulation of the colossal electroresistance (CER) by ion doping in PbPdO 2 thin films. Combined with DFT calculation, we elucidate underlying mechanism its influence.
Hydrothermal deposition is emerging as a highly potential route for antimony-based solar cells, in which the Sb2(S,Se)3 typically situ grown on common toxic CdS buffer layer. The narrow band gap of causes considerable absorption short-wavelength region and then lowers current density device. Herein, TiO2 first evaluated an alternative Cd-free layer hydrothermally derived Sb2S3 cells. But it suffers from severely inhomogeneous coverage, effectively eliminated by inserting Zn(O,S) surface atom...
In this work, PbPd
Abstract Quantum anomalous Hall effect (QAHE) characterized by the presence of multiple non-dissipertive edge conduction channels has garnered substantial research interest owing to its applications in energy-conserving electronic devices. However, observation is constrained extremely low temperatures, which pose challenges for practical implementation. In context, we delineate interrelationship between Nernst and quantum through Berry curvature Bi/FeBi2Te4 heterostructure. Initially, under...
Abstract The kagome lattices of the ATi$_{3}$Bi$_{5}$ family have recently garnered significant attention due to their superconducting and topological properties. Here, we conducted an in-depth analysis band structure prototypical titanium-based lattice material, CsTi$_{3}$Bi$_{5}$, using Density Functional Theory. We revealed its properties demonstrated that Van Hove singularitie can be effectively tuned Fermi level under 18 GPa. Our findings confirm dynamic stability CsTi$_{3}$Bi$_{5}$...
Abstract In this paper, topological quantum phase transition was reported in the magnetic insulator MnBi 2 Te 4 under pressure strain. Electronic and properties of bulk anti-ferromagnetic were investigated by first-principles calculations. We found that band structure changes with strain, resulting a between metal insulator. From variation charge-density distribution it hydrostatic tensile strain is beneficial for increasing interlayer spacing, thereby reducing interaction layers. On...
A first-principles investigation of the topological quantum phase transition AEIn 2 As (AE = Ca, Sr, Ba) under pressure.
Metal selenides are considered potential anode materials for potassium-ion batteries (PIBs) because of their decent theoretical capacity and abundant energy reserves.
Electronic structures of non-twisted and twisted WTe2/WSe2 heterojunction bilayers were investigated using first-principles calculations. Our results show that, for the bilayer, bandgaps are all direct bandgaps, bandgap (K–K) increases significantly when twist angle is from 0° to 10°. However, 11° 14.2°, indirect (G–K) reduces. The band structure bilayer differs that non-twisted. Twisted can be seen as a an conversion turned certain angle. Interestingly, very sensitive change in For example,...
Topological phase transition processes in FM- z order FeBi 2 Te 4 under pressure are determined and topologically classified.
The topological and magnetic properties induced by defects in graphene have attracted attention.
Experimental results that ${\mathrm{BaIn}}_{2}{\mathrm{As}}_{2}$ and $\mathrm{Ca}(\mathrm{Sr}){\mathrm{In}}_{2}{\mathrm{As}}_{2}$, which are the same class of alkali metal compounds, belong to different structural phases have puzzled current materials physics community. Here, we investigate pressure-induced phase transition $A{\mathrm{In}}_{2}{\mathrm{As}}_{2}$ its accompanying improvement in mechanical thermal properties. Firstly, stability their transitions under pressure characterized by...
In recent years, the discovery of 'magic angle' graphene has given new inspiration to formation heterojunctions. Similarly, use hexagonal boron nitride, known as white graphene, a substrate for devices more aroused great interest in graphene/hexagonal nitride heterostructure system. Based on first principles method density functional theory, band structure, states, Mulliken population, and differential charge tightly packed model twisted nitride/graphene sandwich structure have been studied....
The topological nature of electronic states in HoSb significantly depends on spin orderings (NM, AFM or FM configuration). Only the band structure HoSb's antiferromagnetic state is confirmed to be topologically nontrivial.
Abstract Magnetic topological insulators (MTIs) of the MnBi 2x Te 3 x +1 family, discovered in recent years, have been successfully used to explore various emerging physical phenomena. In this work, electronic structure and properties bulk structured antiferromagnetic (AFM) insulator (TI) MnSb 4 Se 7 under spin–orbit coupling (SOC) are investigated based on first-principle calculations. Our results show that AFM is a non-trivial TI. And applying strain can close band gap. Furthermore, with...
Here, we report a new intrinsic magnetic topological insulator FeBi$_2$Te$_4$ based on first-principles calculations and it can achieve rich phase under pressure modulation. Without pressure, predict that both ferromagnetic antiferromagnetic orders are non-trivial insulators. Furthermore, of FM-z order will undergo series transitions from to semimetals then trivial pressure. Finally, further clarify verify with low-energy effective model calculations. This transition process is attributed...
Pressure is an efficient tool to tune the electronic structure of iron-based superconductors. Here, we performed systematic high pressure transport and magnetization measurements on (${\mathrm{Ca}}_{0.73}{\mathrm{La}}_{0.27}){\mathrm{FeAs}}_{2}$ single crystal samples. Filamentary superconductivity induced under a small applied $P=1.6$ GPa. At $P=3.2$ GPa, becomes bulk. It found that ${T}_{c}$ increases initially then decreases with further increasing pressure, forming dome shape. Hall...
The moiré pattern restricts the electronic states of transition metal bilayers, thus extending concept magic angle found in twisted bilayer graphene to semiconductors. Here, we have studied structure WTe 2 using first-principle calculations. Our result shows that a twist significantly changes band structure, resulting bandgap engineering when is turning specific angle. changed by change Interestingly, semiconductor-to-metal phase at 15°. results provide reference for regulation...