A5057319983- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Photovoltaic System Optimization Techniques
- Semiconductor materials and devices
- Advanced Surface Polishing Techniques
- Silicon Nanostructures and Photoluminescence
- solar cell performance optimization
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Radical Photochemical Reactions
- Surface Roughness and Optical Measurements
- Magnesium Alloys: Properties and Applications
- Advanced Thermoelectric Materials and Devices
- Diamond and Carbon-based Materials Research
- Catalytic C–H Functionalization Methods
- Aluminum Alloys Composites Properties
- Magnesium Oxide Properties and Applications
- Copper Interconnects and Reliability
- Pharmacy and Medical Practices
- Sulfur-Based Synthesis Techniques
- Photovoltaic Systems and Sustainability
- Catalytic Processes in Materials Science
- Catalysis and Oxidation Reactions
Georgia Institute of Technology
2022-2024
Korea Institute of Energy Research
2016-2024
Korea University
2018-2020
Chung-Ang University
2020
National University of Singapore
2018
Abstract The increasing adoption of solar energy as a renewable power source marks significant shift toward clean, sustainable alternatives to conventional forms. A notable development in this field is the advancement thin monocrystalline silicon (c‐Si) cells. Characterized by their lightweight, flexible nature, these cells promise transform landscape with enhanced durability, adaptability, and portability. Amidst growing demand for solutions, refining evolving c‐Si cell technologies...
Abstract We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by annealing was accompanied with significant changes. Annealing at 600 °C one minute introduced an increase in implied open circuit voltage (V oc ) due to hydrogen motion, but V decreased again five minutes. At temperature above 800 °C, a-Si:H crystallized...
Abstract The formation of hydrogen blisters in the fabrication tunnelling oxide passivating contact (TOPCon) solar cells critically degrades passivation. In this study, we investigated mechanism during TOPCons for crystalline silicon and suppression such blisters. We tested effects annealing temperature duration, surface roughness, deposition on blister formation, which was suppressed two ways. First, TOPCon a rough enhanced adhesion force, resulting reduced after thermal annealing. Second,...
Tunnel oxide passivated contacts (TOPCon) embedding a thin layer between polysilicon and base crystalline silicon have shown great potential in the development of solar cells with high conversion efficiency. In this study, we investigate formation mechanism hole-carrier selective TOPCon structure on n-type wafers. We explore thermal annealing effects passivation properties terms stability thermally-formed deposition conditions boron-doped polysilicon. To understand underlying principle...
Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at standard test condition, thermal stability solar cell parameters determines dependence PV module. Fill factor loss analysis crystalline silicon one most efficient methods to diagnose dominant problem, accurately. In this study, fill method and double-diode model applied analyze effect J01, J02, Rs, Rsh on in details. The compared through passivated emitter rear (PERC) industrial scale cells. As...
A crystalline silicon (c-Si) solar cell with a polycrystalline silicon/SiOx (poly-Si/SiOx) structure, incorporating both electron and hole contacts, is an attractive choice for achieving ideal carrier selectivity serving as fundamental component in high-efficiency perovskite/Si tandem interdigitated back-contact cells. However, our understanding of the transport mechanism contacts remains limited owing to insufficient studies dedicated its investigation. There also lack comparative on...
Crystalline silicon solar cells are considered mainstream products in the photovoltaic market. To further improve their performance, it is important to reduce recombination at contact between metal electrodes and Si surface because state of metal–Si interface affects saturation current density J0.metal open-circuit voltage. Moreover, large strongly contributes performance degradation cells. Therefore, interfacial structure formed by must be examined minimize value. In this study, we...
Abstract Passivated contact structures are often representative of tunnel oxide passivated (TOPCon) and polycrystalline silicon on (POLO) solar cells. These technologies in cells have experienced great strides efficiency. However, characteristics analysis poly‐Si/SiO 2 applied to TOPCon POLO as a carrier‐selective is still challenging because the film very thin (<1.5 nm), poly‐Si properties change during thermal treatment for passivation effects, dopant diffusion from layer wafer occurs....
Background: Owing to their lightweight and excellent specific mechanical properties, the utilization of magnesium-based materials promises desired weight/energy savings in demanding applications. In recent years, addition ceramic reinforcements magnesium is being extensively researched due potential replace commercial alloys for structural Method: One major limitations Mg-based (alloys nanocomposites) targeting aerospace/ high-temperature applications its poor ignition resistance. this...
Improving electrical and optical properties is important in manufacturing high-efficiency solar cells. Previous studies focused on individual gettering texturing methods to improve cell material quality reduce reflection loss, respectively. This study presents a novel method called saw damage with that effectively combines both for multicrystalline silicon (mc-Si) wafers manufactured using the diamond wire sawing (DWS) method. Although mc-Si not Si currently used photovoltaic products,...
Over the last few years, silicon photovoltaic industry has been searching for efficient technologies to reduce cost of cost/Wpeak by improving their conversion efficiency. However, with solar cell efficiency approaching theoretical limit, it become important increase distribution cells managing loss factors existing in production process. Although some companies are through in-line analysis equipment, a preventive action reducing process defects not yet accomplished. To prevent advance, big...
Abstract We investigated field‐effect passivation by injecting negative charges into SiO 2 /SiN x stack using a plasma charge injection technique. The Si/SiO samples exhibited very high flat‐band shift with injected density (>3.0 × 10 13 cm ) after injection; this was higher than that for the well‐known Al O 3 layer. Most were present within approximately 90 nm of surface SiN layer deposited plasma‐enhanced chemical vapor deposition (PECVD) when comparing capacitance–voltage analysis...
This paper investigated the opportunity and challenge in fabrication of rear junction (RJ) selective double side tunnel oxide passivated contact (DS-TOPCon) cell, featuring full-area p-TOPCon on back a selective-area n-TOPCon front n-type c-Si wafer. <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2\mathrm{D}$</tex> device simulation showed that this cell structure, which exploits potential TOPCon both sides, possesses to reach efficiency...
The introduction of diamond wire sawing (DWS) technology has resulted in significant cost reduction the fabrication crystalline silicon wafers. However, DWS process results parallel wheel marks, saw damage, and formation an amorphous layer on surface, which causes difficultly effectively forming desired surface texture using conventional acidic etching (also known isotropic etching) techniques for multicrystalline (mc-Si) In this study, we propose a novel pretreatment grinding (NPTG)...