A5087888096- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Copper Interconnects and Reliability
- Ion-surface interactions and analysis
- 3D IC and TSV technologies
- Advanced Materials Characterization Techniques
- Surface Modification and Superhydrophobicity
- Plasma Diagnostics and Applications
- Nanofabrication and Lithography Techniques
- Advanced Welding Techniques Analysis
- Adhesion, Friction, and Surface Interactions
- Electronic Packaging and Soldering Technologies
- Nuclear Materials and Properties
- Semiconductor materials and interfaces
- Advanced MEMS and NEMS Technologies
- Advanced Sensor Technologies Research
- Silicon Carbide Semiconductor Technologies
- Quantum, superfluid, helium dynamics
- Additive Manufacturing Materials and Processes
- Electron and X-Ray Spectroscopy Techniques
- Magnetic confinement fusion research
- Hydrogen Storage and Materials
- Mass Spectrometry Techniques and Applications
- Metallurgy and Material Science
- Nuclear Physics and Applications
Université Paris-Saclay
2017-2023
Centre de Nanosciences et de Nanotechnologies
2018-2023
Centre National de la Recherche Scientifique
2017-2023
Université Paris-Sud
2015-2016
A large set of micro-and nanodevices requires hybrid vacuum packaging at the wafer level to optimize their performance and lifetime.When temperature fabrication process is limited, getter films must be integrated into cavity obtain a low sustainable pressure.In this paper, gas generation residual gases inside wafer-level package, as well main alloy multilayers investigated previously, are reviewed.An emphasis put on effect gaseous environment physicochemical mechanisms involved in film...
Formation of Cu-Sn intermetallic compounds has been studied with thin Sn and Cu films deposited by physical vapor deposition. The influence annealing time at 250°C 320°C highlights a rapid interdiffusion copper tin, leading to the formation <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> phases. Application 100 mm wafer bonding...
Activation of evaporated getter films was indirectly evaluated by characterizing their oxidation. Alloys Zr-V, Zr-Ti and Zr-Co with different content in Zr were studied. XRD measurements confirmed that the have a microstructure suitable for gettering activity: are nanocrystalline columnar structure. The oxidized thermal treatment an Ar atmosphere traces O2 H2O. To evaluate oxidation degree, sheet resistance measured 4-probes electrical measurement oxygen deduced from EDX XPS analysis. film...
Yttrium, titanium, and yttrium-titanium getter thin films were elaborated on silicon by coevaporation in ultrahigh vacuum. Y-Ti exhibit nanometric crystallites size (18–35 nm) leading to a very high grain boundary density, which is favorable microstructure for activation at low temperature. The yttrium content alloys influences size, resistance against room temperature oxidation, gettering performance oxygen. with an higher than 30% show strong oxygen sorption during annealing (&lt;300...
The Cu/Sn TLP bonding process is based on the transient liquefaction of Sn layer. control amount molten critical during process, especially when involving thin bonds and small volume. Indeed, by using films deposited PVD, defect-free can be obtained at 250°C but no liquid involved in interdiffusion Cu begins temperature as low 150°C. In this work, Differential scanning calorimetry (DSC) was used to detect melting annealing stacks. effect an ultra-thin buffer layer (UBL) Ti between layers...
Non-evaporable getter materials based on transition metal alloys (Zr, V, Co, Fe, etc...) are reactive able to sorb species like O, N, H or C. Integrated as thin films inside MEMS packages under vacuum, they can compete with desorption during bonding and leaks time. Their thermo-electrical characteristics varying atmospheres reflect the evolution of microstructure is dependent sorption properties. In this frame, 4-probes electrical resistivity measurements have been performed different binary...
Abstract Transition metals alloys are the most studied getter films for wafer-level vacuum packaging of MEMS. In this work we investigated yttrium and Y x Ti y that could possibly overcome limitations usual materials, i.e. reversible sorption hydrogen low ability hydrocarbon gases. As a preliminary step towards objective, properties (co-)evaporated were analyzed by SEM, EDS, XPS in-situ sheet resistance measurements before, after and/or during annealing in vacuum. deposited annealed have...
Sheet resistance of transition metal thin getter films was recorded during activation at 250°C-1h15 by in-situ 4-probes measurement under vacuum. Co-evaporated alloys Zr-V, Zr-Ti, Zr-Co with different compositions were studied. Results show that resistivity and temperature coefficient (TCR) are linked follow the Mooij rule. Several degrees in structure disorder deduced from less - pure metals to Zr-Ti then Zr-V highest, i.e. Zr-Co. In case grain size directly impacts TCR as-deposited state,...
Films of Zr and Zr-V were evaporated on silicon substrates their gettering properties evaluated for MEMS packaging. Their microstructure was determined by SEM TEM. The films then activated at different temperatures low pressure oxidizing species under argon atmosphere. oxygen sorption measured after annealing ion-beam analyses. Finally, integrations getter with various compositions realized inside hermetic packages sealed 300 °C. All the results showed an optimal performance alloy...
Thanks to their reactivity gases, getter materials are involved in vacuum packaging compensate leaks and permeation through the package. After deposition, material is passivated due contact with air, must be thermally activated force diffusion of passivation layer inside film. However, new MEMS technologies imply more fragile devices thus processes a limited temperature. In this frame, we investigate presenting low activation temperature, such as Zr-based alloys. Moreover, most...
Thanks to their reactivity gases, getter materials are involved in vacuum packaging compensate leaks and permeation through the package. After deposition, material is passivated due contact with air, must be thermally activated force diffusion of passivation layer inside film. However, new MEMS technologies imply more fragile devices thus processes a limited temperature. In this frame, we investigate presenting low activation temperature, such as Zr-based alloys. Moreover, most...
Gettering properties of thin films pure yttrium and yttrium-based alloys have been studied for application to MEMS vacuum packaging at the wafer level. Thin Y, Zr-Y, Ti-Y V-Y were co-evaporated under ultra-high vacuum. It is demonstrated that sheet resistance measured by 4-probes technique before after activation 250°C gives a good estimation oxygen sorption ability determined NRA. Pure has found be highly reactive deposition (sheet increases 40% 1 month in air) but poorly efficient trapping...
Many microsensors need to operate in medium vacuum, which is obtained by low temperature vacuum packaging integrating a getter film. By thermal activation during the sealing process, film aims compensate outgassing of inner surfaces micro-cavity and also leaks after sealing. Thin films alloys were coevaporated under ultra-high on silicon wafers. They activated annealing at temperatures ranging from 225°C 400°C, one hour Argon atmosphere with traces oxidizing species. Three complementary ion...