A5029348505- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- solar cell performance optimization
- ZnO doping and properties
- Copper-based nanomaterials and applications
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Photovoltaic System Optimization Techniques
- Transition Metal Oxide Nanomaterials
- Surface Roughness and Optical Measurements
- Solar Thermal and Photovoltaic Systems
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Optical Coatings and Gratings
- Advanced Surface Polishing Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Advanced Thermoelectric Materials and Devices
- TiO2 Photocatalysis and Solar Cells
New Jersey Institute of Technology
2003-2017
Millennium Engineering and Integration (United States)
2010-2011
Princeton University
1988-2009
Office of Scientific and Technical Information
2003
Brookhaven National Laboratory
1981-1999
National Renewable Energy Laboratory
1997-1999
Oak Ridge National Laboratory
1997-1999
University of Illinois Urbana-Champaign
1999
United States Department of Commerce
1997
Department of Energy and Environment
1981
The temperature and flux dependences of photoconductivity have been investigated for plasma-deposited hydrogenated amorphous silicon alloys produced under a variety processing conditions. In undoped films, new features such as thermal quenching supralinearity are observed. Such behavior is critically dependent on the position Fermi level, not observed in doped by addition to plasma PH3, B2H6, O2+N2 mixtures, or air. Interpretation data based model competing recombination centers.
An 8.1% efficient 1-cm2 Schottky-barrier solar cell has been fabricated in our laboratory using a layered Schottky barrier on <100> 2-Ω cm p-type silicon. Reproducible results have obtained the structure which involves 44-Å Cr adjacent to silicon obtain good photovoltaic voltage and 58-Å Cu overlayer decrease resistance. The provides control of height, resistance, optical transmission. Application this approach should produce 15% be readily applied thin-film cells when...
We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process in multiple laboratories. This collection samples exhibits a wide variation morphologies, compositions, and solar power conversion efficiencies. An characterization properties is reported here—including those derived from capacitance–voltage, admittance...
Highly transparent and conductive In2O3 ZnO films containing different doping elements such as Ti, Mo, Zr, Nb, Ta, W (for In2O3), B ZnO) have been prepared by reactive-environment, hollow cathode sputtering (RE-HCS). The use of Nb effective dopants is reported for the first time. Metallic targets were used exclusively, dopant concentration was easily controlled using a second power supply. As result gas flow geometry, conducted in metal mode, target materials are free from oxidation during...
The recently suggested photocarrier grating technique appears to be the most reliable method available for determination of ambipolar diffusion length in hydrogenated amorphous silicon. We show that can made simpler than originally suggested, and it is self-sufficient sense all required parameters determined by same experimental setup. It demonstrated various results obtained are self-consistent extremely accurate values determined.
Cr-MIS solar cells having a 2-cm2 area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% polycrystalline Si. Surface-state data were used predict open-circuit voltages of 0.60 0.50 V, respectively, for the single-crystal Spectral response measurements Cr metal thickness confirm differences in short-circuit current density using these two types
A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V < <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> 0.56 V. This voltage is independent the method used in oxide formation when thickness ranges from 10 30 Å. It concluded that slow deposition Cr an interface leads lowered work function and thus increased . high n-value fixed charge are not necessary obtain
It is demonstrated that solar cells fabricated using plasma-deposited a-Si:H alloys can be seriously degraded by the incorporation of certain impurities during deposition materials. Nominally intrinsic layers are adversely affected addition to plasma air, N2+O2 mixtures (although neither N2 nor O2 separately), PH3, or SiH3Cl (monochlorosilane). For example, conversion efficiency Pd/p-i-n lowered from 3.1% 1.5% presence in 3000 ppm air i-layer. In this case modification gap-state density...
Several Schottky barrier solar cells were fabricated by evaporation and sputtering of Al ohmic contacts Cr or AuCr alloy metals on 0.5-10.0 2 Ω ċ cm p-type silicon. Potential efficiencies 4.8 to 12 percent observed which would be realized with improved fill factors. Computer studies the optical problem indicate an output power increase a factor four through use reduced metal thickness (from 275 100 Å) more effectively transmit energy junction.
A method for thin-film deposition has been studied. The is based on metal sputtering in a hollow cathode configuration with supply of reactive gas the vicinity substrate. working and entrained sputtered atoms exit through an elongated slot. thereby largely prevented from reaching target. basic operation was studied using Cu target pulsed power excitation. These studies included dependence rate power, pressure, flow rate, film thickness profiles, resistivity as function substrate conditions....
Thin metal films ( approximately 100 A) have been studied for application to Schottky barrier solar cells (SBSC). Metal having >55% transmission over the spectrum and resistance of 20 ?/? applied Si form a rectifying contact. A 9.5% sunlight efficient SBSC was produced using 50-A Cr adjacent good adhesion high open circuit voltage Cu overlayer produce low sheet resistance. Film quality has related evaporation rate, layer selection, substrate conditions. Solar cell performance is determined...
Titanium nitride (TiN) is well known for its excellent conductivity, inertness, and good optical reflectivity at long wavelengths. These properties make it a potential IR-reflective back contact material suitable ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. Using pulsed power, 12cm linear hollow cathode source fitted with Ti targets N2 as the reactive gas, TiN films were deposited on Mo-coated glass. The static deposition rate was 50nm∕min sputtering power of only 500W. high indicates...