Young-Bae Park

ORCID: 0000-0003-0241-4584
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About
Contact & Profiles
Research Areas
  • Electronic Packaging and Soldering Technologies
  • 3D IC and TSV technologies
  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • Advanced Welding Techniques Analysis
  • Microwave Engineering and Waveguides
  • Thin-Film Transistor Technologies
  • Radio Frequency Integrated Circuit Design
  • Semiconductor materials and interfaces
  • Metal and Thin Film Mechanics
  • Synthesis and properties of polymers
  • Advanced Antenna and Metasurface Technologies
  • Antenna Design and Analysis
  • Electrodeposition and Electroless Coatings
  • Silicon Nanostructures and Photoluminescence
  • Silicon and Solar Cell Technologies
  • Intermetallics and Advanced Alloy Properties
  • Nanomaterials and Printing Technologies
  • ZnO doping and properties
  • Additive Manufacturing and 3D Printing Technologies
  • Adhesion, Friction, and Surface Interactions
  • Ferroelectric and Piezoelectric Materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Sensor and Energy Harvesting Materials
  • Aluminum Alloys Composites Properties

Andong National University
2016-2025

Samsung (South Korea)
1999-2019

SK Group (South Korea)
2019

Korea Institute of Industrial Technology
2012-2018

Korea Electric Power Corporation (South Korea)
2017

Catholic University of Pusan
2014

Changwon National University
2010-2014

Quality and Reliability (Greece)
2013

Seoul National University Hospital
2001-2012

Yeungnam University
2012

In this work, we reported high performance OLED devices with transparent and conductive carbon nanotube anodes after modification. The modifications include IMRE proprietary PEDOT:PSS composite top coating (PSC), concentrated HNO3 acid soaking, polymer encapsulation. For PSC-modified thin film anode, achieved maximum luminescence of ∼9000 cd/m2, close to ITO-based device performance, efficiency ∼10 cd/A, similar device. is approximately 30 450 times better than that for using CNT by others....

10.1021/nn900406n article EN ACS Nano 2009-07-09

The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl(trimethylenemethane)ruthenium [Ru(TMM)(CO)3] and O2 as reactant is reported. high vapor pressure, thermal stability, relatively small ligands the precursor facilitate efficient ALD. Typical self-limiting growth an ALD temperature window 220–260 °C are observed along with significantly per cycle (GPC) (∼1.7 Å) short incubation cycles (∼6) at 220 °C. Density functional theory calculations indicate that rate...

10.1021/acs.chemmater.1c01054 article EN Chemistry of Materials 2021-07-08

Integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication suspended micro-disk resonator structure (see figure) suggests that the method reported here—a combination wafer bonding, ion implantation, and layer transfer induced by laser irradiation—may be useful optoelectronic applications.

10.1002/adma.200502364 article EN Advanced Materials 2006-05-18

Growth behaviors of intermetallic compounds (IMCs) and Kirkendall voids in Cu/Sn/Cu microbump were systematically investigated by an in-situ scanning electron microscope observation. Cu–Sn IMC total thickness increased linearly with the square root annealing time for 600 h at 150 °C, which could be separated as first second growth steps. Our results showed that behavior void matched Cu6Sn5, Cu3Sn. It confirmed double-layer kinetics closely related to mechanism microbump, seriously...

10.7567/jjap.53.05ha06 article EN Japanese Journal of Applied Physics 2014-04-28

Abstract This study investigated the effects of atomic layer deposited (ALD) TiN diffusion barrier and post-annealing on interfacial adhesion energy between ALD Ru SiO 2 films using a four-point bending test. The Ru/SiO structure without was as low 3.20 J/m², it increased to 10.10 J/m² with films. After at 400 °C for 100 h, energies Ru/TiN/SiO structures 7.16 25.26 J/m2, respectively. X-ray photoelectron spectroscopy analysis revealed that thin due formation TiNxOy reaction TiN/SiO...

10.35848/1347-4065/adba68 article EN cc-by-nc-nd Japanese Journal of Applied Physics 2025-02-26

10.1023/a:1012449425744 article EN Journal of Materials Science Materials in Electronics 2001-01-01

We have investigated the effect of texture on in-plane (IPP) and out-of plane (OPP) polarizations pulsed-laser-deposited BaTiO3 thin films grown Pt La0.5Sr0.5CoO3 (LSCO) buffered electrodes. The OPP IPP were observed by piezoresponse force microscopy (PFM) for three-dimensional polarization analyses in conjunction with conventional diffraction methods using x-ray reflection high energy electron measurements. electrodes exhibited highly (101) preferred orientation higher component whereas...

10.1063/1.1923173 article EN Applied Physics Letters 2005-05-02

Transparent and conducting FTO coatings are fabricated <italic>via</italic> ultrasonic spray pyrolysis achieving exceptional optical, electrical mechanical properties.

10.1039/d0tc03314f article EN Journal of Materials Chemistry C 2020-01-01
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