A5019080720- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Laser Design and Applications
- Photocathodes and Microchannel Plates
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Optical Coatings and Gratings
Nissan (Japan)
2023
Nagoya University
2016-2018
Abstract Perovskite solar cells are expected to be applied as photoreceivers for high-efficiency optical wireless power transfer electric vehicles. The use of aluminum gallium nitride (AlGaN) an electron transport layer (ETL) wide-gap perovskite is hereby proposed in this paper. electrical properties and energy-band alignment AlGaN deposited by either hydride vapor phase epitaxy or metal-organic CVD investigated. shows a higher conduction band level than conventional ETL materials....
A light-trapping structure was fabricated on crystalline Si wafers. In this method, a Ge/Si(001) self-assembled dot etched using KOH and commercial alkaline solution including nanomask particles. Many nanoscale islands were formed by adding the The enhancement of light absorption successfully confirmed in samples with nanostructures after etching. Since etching margin nanostructure less than 2 µm, could be applied to an ultrathin substrate. To investigate effect surface passivation...
A high-performance light-trapping structure for Si was fabricated with an etching margin of only ∼1 µm using Ge islands grown by gas-source molecular beam epitaxy as masks. KOH solution containing isopropyl alcohol and HF + H2O2 CH3COOH mixed were used etchants. The reflectance the shown to be comparable that a conventional pyramid texture, which requires larger ∼10 µm. In addition, potential short-circuit current density (p-Jsc) 42.3 mA/cm2 obtained sample after deposition indium tin oxide,...
Novel light trapping structure was fabricated on crystalline silicon wafers by KOH etching using Ge dots as an mask. In this method, it is found that the density of before important for nanostructure after etching. The depth and can be controlled changing time. Reduction reflectance successfully confirmed in samples with nanostructures. Control size distribution nanostructures key to further reduction wide range wavelength.
В работе для растворов КОН и HF:H 2 O :CH 3 COOH исследована селективность травления SiGe-структур в зависимости от их состава. Полученные результаты предложено использовать создания на кремнии субмикронного рельефа поверхности за счет селективного структур с самоформирующимися наноостровками Ge(Si). предлагаемом подходе наноостровки Ge(Si) служат маской Si водном растворе KOH добавлением изопропилового спирта, а затем удаляются селективным травлением COOH. Экспериментально показано, что...
Heterojunction solar cells were fabricated with novel light trapping structure formed by selective etching using Ge dots as an mask. The has a lot of islands submicron scale and nanoscale. Etching margin was less than 2 μm. changing the parameter layer. As result, sample at coverage 60 monolayers (MLs) had largest island structure. cell 60MLs showed high short-circuit current density 39.7 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...