A5062511468- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Spectroscopy and Laser Applications
- Advanced Semiconductor Detectors and Materials
- Advanced Photonic Communication Systems
- Heat Transfer and Optimization
- Hybrid Renewable Energy Systems
- GaN-based semiconductor devices and materials
- Plant Stress Responses and Tolerance
- Building Energy and Comfort Optimization
- Hydrogen Storage and Materials
- Mechanical and Optical Resonators
- Fuel Cells and Related Materials
- Smart Parking Systems Research
- Smart Grid Energy Management
- Solid State Laser Technologies
- Magnetic Field Sensors Techniques
- Vacuum and Plasma Arcs
- Catalysts for Methane Reforming
- Induction Heating and Inverter Technology
- Membrane-based Ion Separation Techniques
- Advanced Photocatalysis Techniques
- Refrigeration and Air Conditioning Technologies
- Light effects on plants
Shanghai Jiao Tong University
2017-2024
Kurchatov Institute
2024
University of Arkansas at Fayetteville
2013-2024
Shanghai University of Electric Power
2022-2024
Arizona State University
2002-2013
Conventional air source heat pumps suffer from frosting in winter and consume a large amount of electricity for defrosting. Meanwhile, ventilation recovery is an important approach to energy saving buildings. This paper conducts proof-of-concept study novel vapour injection pump. A prototype built tested. It has unique defrosting process driven by the warm exhaust In normal operation, first cooled down medium-pressure evaporator. then mixed with ambient low-pressure Both theoretical...
In this letter the authors present a comprehensive study of threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3μm. It is found that room temperature, dominated by nonradiative recombination accounting more than 90% total density. From high hydrostatic pressure measurements, strong increase with observed, suggesting process may be attributed to electron overflow into GaAs∕GaAsP barrier layers and, lesser extent, Auger recombination.
Abstract Recent demonstrations of room-temperature lasing in optically pumped GeSn show promise for future CMOS compatible lasers Si-photonics applications. However, challenges remain electrically devices. Investigation the processes that limit device performance is therefore vital aiding production commercial In this work, a combined experimental and modelling approach utilised to explore dominant loss current By manipulating band structure functioning devices using high hydrostatic...
Ga As Sb ∕ quantum wells (QWs) with 1.3μm light emission are grown using solid-source molecular beam epitaxy. The growth temperature is optimized based on photoluminescence (PL) linewidth and intensity edge-emitting laser (EEL) threshold current density; these measurements concur that the optimal ∼490°C (∼500°C) for GaAsSb∕GaAs QWs (without) GaAsP strain compensation. High performance EELs vertical-cavity surface-emitting lasers (VCSELs) demonstrated GaAsSb∕GaAs∕GaAsP compensated active...
We investigate the temperature and pressure dependence of threshold current density edge-emitting GaAsSb/GaAs quantum well (QW) lasers with different device characteristics. Thermally activated carrier leakage via defects is found to be very sensitive growth conditions GaAsSb QWs. An optimization reduces nonradiative recombination mechanisms from 93% 76% at room temperature. This improvement in leads a large 533 Acm−2/QW 138 characteristic temperature, T0 (T1), 51 ± 5 K (104 16 K) 62 2 (138 7 near
This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, devices show a low threshold current density (J<sub>th</sub>) 253 Acm<sup>-2</sup>, transparent 98 an internal quantum efficiency 71%, optical loss 18 cm<sup>-1</sup> characteristic temperature (T<sub>0</sub>) = 51K. The defect related recombination in these is negligible primary non-radiative path has stronger dependence on carrier than radiative contributing to ~84% at...
We propose a lattice-matched Ge/GeSiSn quantum cascade detector (QCD) capable of operating in the longwave infrared. The optical absorption and carrier transport based on intersubband transitions all occur within L-valley conduction band group-IV material system using N-doped wells (QWs). waveguided lattice matched structure can be deposited strain free top Ge buffer grown Si substrate, is end-coupled to low-loss on-chip waveguides. optimized QCD through analysis photoresponsivity...
Ga As Sb ∕ quantum well (QW) lasers grown by solid source molecular beam epitaxy are fabricated into ridge and tested. These devices have a lasing wavelength around 1.2μm that is substantially blueshifted relative to the electroluminescence peak. The magnitude of blueshift increases as cavity length shortened, indicating with injection level. This attributed material gain saturation band filling effects. internal efficiency ∼75%, transparency current density ∼120A∕cm2, threshold...
The growing demand for sustainable energy solutions are being fueled the evolution of distributed building supply systems. This paper integrated Proton Exchange Membrane Fuel Cells (PEMFCs) with Air Source Heat Pumps (ASHPs) to establish a PEMFC-ASHP-CHP system that provides comprehensive and efficient network. By using Simulink Python, research meticulously examines layouts, heat management strategies, balance between power within this complex structure. result shows that, comparing three...
Under ambient conditions, the temperature sensitivity of 1.3 mum GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing insensitive VCSEL operation around room temperature.