A5025782693- Aluminum Alloy Microstructure Properties
- High Temperature Alloys and Creep
- MXene and MAX Phase Materials
- 2D Materials and Applications
- Metallurgical Processes and Thermodynamics
- Solidification and crystal growth phenomena
- Perovskite Materials and Applications
- Intermetallics and Advanced Alloy Properties
- Metallurgical and Alloy Processes
- Optical Network Technologies
- Semiconductor materials and interfaces
- nanoparticles nucleation surface interactions
- 3D Surveying and Cultural Heritage
- Aluminum Alloys Composites Properties
- Thermodynamic and Structural Properties of Metals and Alloys
- Advanced Battery Materials and Technologies
- graph theory and CDMA systems
- Magnesium Alloys: Properties and Applications
- Conservation Techniques and Studies
- Microstructure and mechanical properties
- Advanced battery technologies research
- Bauxite Residue and Utilization
- Solid-state spectroscopy and crystallography
- X-ray Diffraction in Crystallography
- Semiconductor Lasers and Optical Devices
Xi’an Jiaotong-Liverpool University
2024
North China Electric Power University
2024
Alcoa (United States)
2003-2019
National High Magnetic Field Laboratory
2018
Florida State University
2018
Hong Kong University of Science and Technology
2018
University of Hong Kong
2018
Beihang University
2002
University of Wisconsin–Madison
2001-2002
Artificial layers were designed on the surface of Mg anodes using a facile alloy electrodeposition method, which enables high-performance rechargeable magnesium batteries to achieve ultra-stable electrochemical performance even after 5000 cycles.
van der Waals heterostructures that are usually formed using atomically thin transition-metal dichalcogenides (TMDCs) with a direct band gap in the near-infrared to visible range promising candidates for low-dimension optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and substrate adjacent 2D layers plays an important role modifying properties of individual material device performances through Coulomb forming excitons. Here, we report...
Bandgap engineering offers opportunities for tailoring the properties of semiconductor materials desired applications in microelectronics and optoelectronics. Alloys different can lead to continuously tuning bandgap. Here, we report bandgap layered InSe single crystals by substituting Se atoms with S atoms. The formation InSxSe1–x crystal alloy x ≤ 0.3 is evidenced X-ray diffraction resonant Raman spectra. photoluminescence (PL) spectra peak position blue shifts from ∼1.27 ∼1.42 eV as...
We report on the low-temperature photoconductive properties of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs) synthesized using chemical vapor transport method. Photoconductivity measurements show that these FETs display room temperature photo-responsivities ∼7 mAW-1 when illuminated with a laser wavelength λ = 658 nm power 38 nW. The showed orders magnitude improvement (up to ∼1.1 AW-1 external quantum efficiencies reaching as high ∼188%) upon application gate...
Halide perovskites is a new class of semiconductors with exceptional optoelectronic properties. Among many advantages offered by halide perovskites, the bandgap energy can be tuned in much broader range than what was possible conventional semiconductors. This commonly achieved previous research mixing different species halides into solid solutions. The using this method, however, often underwent an shift under optical or electrical stimuli due to segregation. In work, we discovered...
In this study, the microsegregation effect of copper during solidification A356.2 aluminum casting alloy was evaluated by using simulation and a series experimental works. Electron probe micro analysis (EPMA) computational revealed clearly that as solute element segregates it becomes more significant approaches its completion. This is due to accumulated ahead eutectic interface solidification. Consequently, presence higher content in causes influence on characteristics forms enriched phases...
Five kinds of modulation code for fiber optic network are analyzed. They bilevel Manchester, trilevel pulse position (PPM) frequency keying (PFK) and the partial Manchester code. The modified Personick (1973) formulas special cases derived. With these we calculate sensitivities optical receiver with configurations PIN-FET, PIN-BJT, APD-FET APD-BJT. Other practical characteristics also Although each has its advantages disadvantages, PPM, PFK better codes networks.< <ETX...