A5091065024- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Ga2O3 and related materials
- Advanced Memory and Neural Computing
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Catalytic Processes in Materials Science
- MXene and MAX Phase Materials
- Advancements in Solid Oxide Fuel Cells
University of Science and Technology of China
2023-2024
To propel the miniaturization of dynamic random access memories (DRAM), obtaining capacitor dielectric materials lower equivalent oxide thickness (EOT) and leakage is essential. Herein, we demonstrate a CMOS compatible (complementary metal-oxide-semiconductor) post-processing method for HZO-based metal-insulator-metal (MIM) capacitors, namely, low-temperature annealing combined with electric field (E-field) cycling. The process induces crystallization material, while subsequent E-field...
For the first time, a core drain current model based on surface potential without any implicit functions is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The solution analytically deduced by solving Poisson equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion modes. Then, expression derived from Pao–Sah integral as function of mobile charge density obtained at source...
For the first time, an analytical surface-potential-based drain current model is developed for beta-phase gallium oxide (β-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution deduced by solving Poisson's equation with appropriate simplification assumptions in accumulation,...
This article reports the time-dependent dielectric breakdown (TDDB) reliability of zirconia (ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> )-based MIM capacitors with sub-0.7-nm equivalent oxide thicknesses (EOT). Results indicate that substituting top part ZrO an Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZrO /Al (AZA) stack dramatically improves ultra-thin capacitors. The origin is attributed to Al-doping forming...