A5015928996- Advanced Optical Sensing Technologies
- CCD and CMOS Imaging Sensors
- Ocular and Laser Science Research
- Analytical Chemistry and Sensors
- Organic Electronics and Photovoltaics
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Perovskite Materials and Applications
- Target Tracking and Data Fusion in Sensor Networks
- Photoacoustic and Ultrasonic Imaging
- Silicon Nanostructures and Photoluminescence
- Non-Invasive Vital Sign Monitoring
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Coherence Tomography Applications
- Conducting polymers and applications
Ulsan National Institute of Science and Technology
2021-2025
IMEC
2023-2024
Sogang University
2024
We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of origin is obtained using an elaborate set characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and photovoltage decay measurements. These results are complemented by energy...
A 640×480 indirect time-of-flight (iToF) image sensor with a 7.2-μm tetra pixel architecture is presented. The proposed consisting of four adjacent pixels shuffles its dual taps to compensate for mismatches and provides in- quad-phase information at the same time, suppressing motion artifact. In addition, symmetric trident pinned-photodiode (PPD) structure in each devised optimize alignment microlens, enhancing demodulation contrast sensitivity. prototype iToF VGA resolution was fabricated...
Thin film photodiodes (TFPD) can supplement complementary metal-oxide-semiconductor (CMOS) image sensor vision by their exotic optoelectronic properties assisted monolithic processability. Halide perovskites are known to show outstanding properties, such as large absorption coefficient, long carrier diffusion lengths, and high mobility, leading external quantum efficiency (EQE) fast charge transport in (PDs), especially compared with other thin-film photodiode candidates. In this paper,...
We present a low-power indirect time-of-flight (iTOF) image sensor with fixed depth noise compensation and dual-mode imaging for dynamic range (DDR) enhancement. To reduce the power consumption from high-frequency pixel modulation, TX driver single-sided clock chain is employed in sensor. The inherent phase delay of row bus are measured using row-parallel column-parallel time-to-digital converters (TDCs) to compensate column (FDN). achieve wide (WDDR), reconfigurable pixels circuits support...
Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties required. Although TFPD device performance has improved significantly, pixel development been limited in terms of noise characteristics compared to Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC and dark current, accompanied with high...
Indirect time-of-flight (iTOF) is a 3D depth-sensing technology that provides the distance to object by measuring phase difference of emitted and reflected waves light. Usually, iTOF sensors consume power over 200 mW owing high frequency modulation, which prevents them from application energy limited wearable devices for VR/AR. To minimize column fixed depth noise (FDN), TX driver typically has double-sided clock tree signals both left right sides pixel array [1], [2]. However, consumes...
This letter presents an indirect time-of-flight (iToF) sensor with a tetra pixel architecture to calibrate tap mismatch in single frame. The proposed is incorporated four different configurations 2 by pixels capture eight essential phase data simultaneously and compensate for the interpolation. prototype iToF VGA array was fabricated 110-nm CIS process fully characterized. measured non-linearity less than 1.23% at configuration, achieving about 59% improvement compared conventional 2-tap...
We present a near-infrared (NIR) imager based on high-performance organic photodiode in terms of dark current, specific detectivity and response time. A carefully designed interfacial layer is introduced the thin-film stack to reduce trap assisted carrier emission leading sub-nA/cm<sup>2</sup> current external quantum efficiency above 50% NIR range. The developed chip benefits from this improved current-voltage characteristic (high light signal noise ratio) enables high-resolution,...
In this article, the X-ray radiation effects on colloidal quantum dot photodiode (QDPD)-based short-wave infrared (SWIR) complementary metal-oxide semiconductor image sensors (QD-CISs) are studied. Individual QDPD, silicon readout IC (Si-ROIC), and QD-CIS evaluated together for a comprehensive analysis. The dark current, activation energy, external efficiency (EQE) of samples investigated before after irradiating with 58.2 keV radiation, which has different total ionizing dose (TID) range...
An indirect time-of-flight (iToF) sensor has been spotlighted for its high-quality depth images within a few meter ranges, making it strong candidate realizing metaverse applications in mobile devices [1]. However, one of the unresolved challenges iToF sensors is low background light (BGL) resilience, which can saturate floating diffusion (FD) nodes and deteriorate demodulation contrast (DC), causing large distortion noise. Even though in-pixel auto-zeroing chopping techniques have achieved...