LTE-Advanced extends the capabilities originally developed in LTE within 3GPP. Carrier aggregationis most significant, albeit complex, improvement provided by LTE-Advanced. Bandwidths from various portions of spectrum are logically concatenated resulting a virtual block much larger band, enabling increased data throughput. Additionally, enhancements to MIMO antenna techniques uplink and downlink further increase Cell coverage is improved means relay nodes, which connect donor eNode-Bs. To...

Oxide semiconductorsare highly attractive for the new-generation transparent/flexible electronics. In this letter, logic gates (inverter, NAND, and transmission gates) three-stage ring oscillators based on n-type indiumgallium-zinc-oxide (IGZO) thin-film transistors (TFTs) p-type tin monoxide (SnO) TFTs are presented. The IGZO show a mobility of 10.05 cm2/(V · s) threshold voltage 5.00 V. SnO exhibit 1.19 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Buried channel waveguides have been fabricated in Nd:GGG crystals by using the femtosecond laser inscription. The are confined between two filaments with propagation losses of 2.0 dB/cm. Stable continuous wave oscillation at ~1061 nm has demonstrated room temperature. Under 808 optical excitation, a pump threshold 29 mW and slope efficiency 25% obtained.

Amorphous indium–gallium–zinc oxide (a-InGaZnO or a-IGZO) has already started replacing amorphous silicon in backplane driver transistors for large-area displays. However, hardly any progress been made to commercialize a-IGZO electronic circuit applications mainly because are not yet capable of operating at gigahertz frequencies. Here, nanoscale thin-film (TFTs) fabricated on a high-resistivity substrate with Ta <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

As optical components continue to replace electronics in ultrafast signal processing applications, a growing interest further miniaturization and integration of photonic devices on single chip is observed. Therefore, waveguides high refractive index contrast core cladding materials are developed since couple years. They can have very small cross section also bending radius, enabling the development ultra-compact integrated circuits. Silicon-On-Insulator (SOI) ("photonic wires") most...

Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we report highly optimized complementary inverters based on n-type indium–gallium–zinc oxide and p-type tin monoxide thin-film transistors. Oxide-based with a record voltage gain of 142 have been achieved. The switching point has also tuned to reach the ideal value, namely half value supply voltage. A narrow transition width 1.04 V (13% voltage) is achieved which offers strong anti-jamming ability avoid...

Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because their high electrical performance, low process temperature, uniformity, and ease industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, developed have already been commercialized backplane drivers flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on semiconductors. In this paper, various...

The benefits of Amplify-and-Forward (AF) and Decode-and-Forward (DF) cooperative relay for secure communication are investigated within Wyner's wiretap channel. We characterize the secrecy rate when source, destination, eavesdropper all use single antenna channel conditions fix. Both AF DF strategies proved theoretically to be able facilitate communication. Detailed analysis scheme reveals a trade off between area request rate. In addition, constraints in discussed used explain differences...

Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we report complementary inverters based on p-type tin monoxide n-type indium-gallium-zinc-oxide thin-film transistors. The have a gain of 63 at supply voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> , 1.5 with maximum static power consumption 15.6 nW, 226 3.0 241.2 nW. A five-stage ring oscillator (RO) the is able to operate 1.04 kHz...

We report on the fabrication of planar waveguides in Bi4Ge3O12 crystal by using 17 MeV C5+ or O5+ ions at a fluence 2×10(14) ions/cm2. The reconstructed refractive index profiles produced either irradiation are "well" + "barrier" pattern distribution. two-dimensional modal waveguides, measured end-coupling arrangement, good agreement with simulated distributions. After thermal annealing treatment 260 °C for 30 min, propagation loss and irradiated could be reduced down to ~1.1 ~4.8 dB/cm,...

Oxide semiconductors have emerged as ideal candidate materials for flexible electronics and circuits. However, complementary flip-flops, which are the essential building blocks in sequential circuits, based on all-oxide thin-film transistors (TFTs) not yet been demonstrated. Here, we employed n-type indium gallium zinc oxide p-type tin monoxide to achieve J-K flip-flop (JK-FF) D-type edge-triggered FF (D-FF). The operation properties of JK-FF D-FF were characterised both statically...

Performance of a code-division multiple-access (CDMA) system is studied. The frame-error rate (FER) and bit-error (BER) the forward traffic channel are obtained by using simulation based on TIA/EIA/IS-95. A diversity receiver structure with an adaptive search engine developed analyzed. optimized to achieve high gain. gain factor derived cluster wide-band tapped delay-line multipath fading models. relationships between gain, characteristics, number distributed antennas derived....

Relay is a key technology in LTE-Advanced (LTE-A) for both FDD and TDD. A major aspect of relay the backhaul subframe allocation. In this paper, we discuss allocation TDD-LTE analyze all seven downlink-uplink configurations completeness. The discussion

The system performance of IS-95 based CDMA systems are studied in non-uniform and uniform traffic distributions a cell size. three key elements designing pilot channel Ec/Io, forward Eb/No reverse Eb/No. evaluated terms capacity, soft handoff percentages, signal interference power levels. Various simulations conducted under hexagonal omni-cell configurations. capacity will increase 17% when the propagation path-loss slope increases from 20 to 50 dB/decade. As orthogonality increases, link...

In a code division multiple access (CDMA) radio network, optimization of power management can enhance the link capacity and performance. When transmit ratio center cell to adjacent cells changes 6 dB, could be enhanced by 53% for heavily loaded with double traffic density surrounding cells. The whole cluster increase 8%. pilot percentage directly affects system 43% when from 15% 5%. 31% only high decreases. Cell breathing is needed balance interference change. performance CDMA also improved...

Static random access memory (SRAM) is essential for cache memory. Although oxide semiconductors are ideal candidate materials next-generation flexible electronics, complementary SRAM based on has not yet been demonstrated. Here, we reported an with a traditional six-transistor structure n-type indium gallium zinc and p-type tin monoxide. A cell area of only 130 × 160 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> achieved the...

In the fabrication of transparent conductive oxide thin film transistor (TFT), an atomic layer deposited (ALD) zinc (ZnO) and a cross-linked poly-vinyl-alcohol (c-PVA) were each used as active gate insulating on poly-ethylene (PET) substrate respectively. Considering transmittance deposition rate ALD ZnO at low temperature without any damage PET substrate, was 120°C spin-coated c-PVA layer. From force microscope (AFM) images, it possible to conclude that surface morphologies not inferior...

PN offset planning in IS-95 based CDMA systems is systematically addressed this paper. The minimum reuse distance for the same pilot derived on signal strengths. a function of receiver sensitivity, propagation path loss, system configuration, search window size and hand-off parameters. It found that required decreases from six times cell radius to one radius, when loss slope increases 20 50 dB/decade. interval between two adjacent base stations delay spread, parameter settings difference....

In this paper we have studied a low-temperature process of fabricating zinc oxide (ZnO) thin-film transistors (TFTs) on polyethylene terephthlate (PET) substrate. PET film has lower glass transition temperature (Tg = 120°C) than costly Polyethersulphone (PES) 230°C). Therefore applied cross-linked poly-vinylphenol (c-PVP) to annealing at 110°C instead the conventional c-PVP (annealing 165°C). The resulting TFTs based fabricated by were similar in electrical characteristics TFTs. addition,...

There are a lot of measures to launch DoS attacks from the physical layer application in wireless mesh networks because its own characteristics. In order detect attack (Denial-of-Service attack) when adopt AODV routing protocol Ad Hoc networks, such technologies as an end-to-end authentication, utilization rate cache memory, two pre-assumed threshold value and distributed voting used this paper attackers, which is on basic hierarchical topology structure. Through performance analysis theory...

A practical CDMA microcell structure is systematically studied on both forward link and reverse link. The embedded shares the same frequency has full connectivity with overlaying macrocell. capacity of macrocell are derived simulated at various traffic distributions. 1.03 to 1.12 times that a regular cell. combined 2.00 2.11 performance also analyzed in terms RF reliability, soft hand-off factors, interference power levels. reliability will degrade more seriously than microcell. radio...

Oxide semiconductors have been envisaged to find applications in flexible electronics daily life such as wearable electronic gadgets offer novel user experiences. However, there are still several bottlenecks overcome order realise this goal, especially the lack of oxide‐semiconductor components fast enough for wireless communications, low power oxide transistors, and high‐performance p‐type complementary circuits. Here we review our recent work address these problems, including gigahertz...

Abstract Considering the hanging mechanism of parallel link forging manipulator, we analyzed process workpiece and parameters typical to determine influence press-down amount elongation on manipulator during process. According structure working characteristics buffer cylinder, also simplified stress analysis model mechanism, studied state, obtained key factors affecting rod mechanism. Based state correlation between was explored, principle for determined. Consequently, design idea proposed....