For the first time, we present electrostatic discharge (ESD) behavior of grounded gate tunnel FET (ggTFET) with detailed physical insight into device operation, 3-D filamentation and failure under ESD stress conditions. Current as well time evolution junction breakdown, turn-ON, voltage snapback, finally unique mechanism is studied using both 2-D technology computer aided design simulations. The interaction between band-to-band tunneling, avalanche multiplication, thermal carrier generation...

A unique low current ESD failure during snapback region, which otherwise survive high stress, is reported in LDMOS-SCR device. The universal to devices designed as self-protected MOS switch and found be specific a window of between trigger holding state, can only captured using resistance load-line TLP system. This resulted severe power scalability issues LDMOS-SCRs. In this work, while systematic experiments 3D TCAD simulations, we have developed detailed physical insights into the...

This article presents device design insights and challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection a self-protected high-voltage switch/driver system-on-chip applications. The tradeoff between maximizing ESD robustness without hindering the transistor's operation is discussed in detail. An interplay parasitic p-n-p turn-on space charge modulation (SCM) revealed,...

A unique failure mechanism for International Electrotechnical Commission (IEC) stress through a common-mode (CM) choke is investigated. The presence of CM in the path was found to change current waveform shape that electrostatic discharge (ESD) protection device experiences on-chip. Minor variations specific IEC levels are cause an unexpected window drain-extended nMOS silicon controlled rectifier (DeNMOS-SCR). 3-D technology computer-aided (TCAD) simulations used understand behavior and...

In this work we address turn-on vulnerability of conventional LDMOS-SCR devices under standard circuit operation window. This behavior is correlated with early ESD / SoA failure and power-to-fail scalability issue in HV devices. The 3D TCAD used to Develop physical insights into the performance reliability limiters device. Different engineered designs are proposed mitigate power fail scalability, while keeping channel hot carrier degradation unaffected.

Physical Insights into the early formation of current filaments in High Voltage SCR is presented. Repeated filamentation and subsequent filament spreading, which turn results motion, detected using 3D TCAD. Impact different load lines on ESD robustness dynamics with stress duration has been studied experiments TCAD simulations. Finally, impact silicide blocking mitigating strength studied, improves robustness.

In this article, a novel design approach for improving electrostatic discharge (ESD) robustness of high-voltage laterally double-diffused MOS (LDMOS) devices is presented using detailed 3-D TCAD simulations. The proposed method considers engineering both static filament and dynamic/moving current filaments in LDMOS design. Physical insights approaches moving at higher stress levels are presented. Dynamic motion its relation to n-p-n turn-on with an optimum p-well profile substrate biasing...

A prolonged operation of Graphene FET and interconnects mandate the assessment temporal evolution degradation material. Contrary to bulk semiconductors, which break only above a critical field, time-dependent consequent failure graphene has been discovered, precludes existence threshold manifests as potential defect-assisted aging issue for other 2D material-based devices. Unlike catastrophic failures, are triggered during redistribution excess energy, role reaction kinetics (time) in...

In this work, for the first time, we have used a matured graphene technology platform ESD physics explorations while investigating implications of various design and options. Impact diffusive vs. ballistic carrier transport top-gate back-gate on failure mechanism is investigated. A unique contact limited in transistors reported. Physical insights current saturation FET step by dielectric capped presented time. Moreover, device degradation under time scales its are revealed. Finally,...

In this paper, for the first time, record high-performance top-gated graphene technology platform is used electrostatic discharge (ESD) physics exploration while investigating implications of various design and options. Impact diffusive versus ballistic carrier transport on failure mechanism in top-gate as well back-gate FET (GFET) investigated. A unique contact limited transistors reported. Physical insights current saturation GFET step-by-step dielectric capped are presented time....

New design approach for improving ESD robustness of High voltage LDMOS devices is presented using detailed 3D TCAD simulations by developing physical insights and engineering approaches moving filaments. (i) NPN turn -on an optimum P-well profile & substrate biasing (ii) filament width drain diffusion length (DL), shows how static can be modified to achieve dynamic (moving) nature. This resulted in 10× improvement self-protecting concepts.

Detailed physical insight into the ESD behavior and unique failure mechanisms of Pentacene Organic Thin Film Transistors (OTFTs) is reported. Orders magnitude difference in channel current under time scales, when compared to DC discovered. Moreover, three stage TLP characteristics with snapback state novel mechanism are Finally, influence field Surface Assembled Monolayer (SAM) on carrier transport threshold addressed.

In this work, a unique measurement setup, involving integration of transmission line pulse tester with Raman spectrometer, is used to investigate the pulsed safe operating area (SOA) boundary graphene field effect transistors (GFETs). Physical insight into various SOA boundaries, i.e., near-electrical, electro-thermal and thermal, given. Unique defect-assisted degradation in channel its correlation carrier transport as well failure revealed, help electrical spectroscopy based investigations...

Unique electrothermal properties of graphene and the chemical nature its degradation present a compelling set conditions for exploration breakdown at different time scales. In this work, we give phenomenological description graphene's electrical ranging from nonequilibrium (transient) state to far-equilibrium while spanning scale few nanoseconds minutes. The intricate roles Pauli-blocked states, intraband heating, mechanism in defining safe operating area (SOA) have been explored. field...

This article discloses a unique failure mode in high-voltage bidirectional (Bi-Di) silicon-controlled rectifier (BDSCR) cells during International Electrotechnical Commission (IEC) air discharge electrostatic (ESD) events. Failure was found to be sensitive IEC measurement conditions or variabilities such as the speed of gun and angle approach, which causes different stress rise times. Hence, observed peculiar function times current waveform. Remarkably, BDSCR only for window A new approach...

Power-scalability issues for longer pulse duration discharges (PW>100ns) in high voltage LDMOS-SCR devices is evaluated. The severity of the problem with increasing LDMOS classes highlighted a need newer design strategies. A systematic approach presented to evaluate effect different parameters on filament and SCR turn-on near snapback region. Finally guidelines are improve power scalability without compromising its ON-state DC (functional) Safe Operating Area (SOA) characteristics.

In this work, a novel recessed structure is proposed which improves the electric field distributions at drain channel junction, hence breakdown voltage. Technology computer aided design simulation results showed that off state voltage of 28 nm Fully Depleted Silicon on Insulator MOSFET extended from 1.8V to 3.3 V or more. A detailed study presented and DC characteristics same device. An asymmetric version also studied further enhance with without Ground Plane (GP).

In this work, a unique Human Body Model (HBM) failure is presented in 5V-PMOS multi-finger structures. The sensitive to the multi-bank layout, generally used achieve higher holding voltage. Missing Transmission Line Pulse (TLP) current (It2) scalability detected with pulse width, structures and correlation established lower HBM failure. A detailed 3D- TCAD analysis approach understand PMOS turn-on single-bank structures, turn, It2 for longer width. obtained insights are provide design...

Physical insights into the impact of thin-oxide polysilicon gate on on-resistance DeMOS-based HV-PNP are developed using detailed TCAD simulation. Turn-on and eventual failure mechanisms in discussed. The placed over N-Well P-Well regions is investigated separately. physics regenerative bipolar degradation its effect dynamic understood as a function placement. Furthermore, floating mitigated while having faster lateral PNP trigger, resulting best case at all current levels. this work help to...

In this work, we present experimental investigations and new physical insights into the ESD behavior failure of large area CVD graphene RF transistors Multiwall carbon nanotubes. Unique two stage defect induced in is reported for first time. Detailed study on self-heating its implication current carrier transport FETs addressed with transient analysis time scales. A unique power law like also Multi wall CNT's.

The concept of abutting source/body and drain/anode junctions is studied in detail a high voltage LDMOS-SCR with 2D 3D TCAD simulations. SCR turn-on low current filament formation are strongly influenced by the isolation at anode cathode side LDMOS-SCR. While impacts filament-induced failures currents, has minor impact. Physical insights given on degradation its influence spreading. obtained understanding helps to build an ESD robust, self-protected LDMOS-SCRs.

This paper investigates the reliability of a novel Fin-enabled vertical or area-scaled tunnelling FET proposed for sub-10-nm channel length operation. device enables smooth transition from FinFET technology to Fin-based TFETs, while enjoying benefits architecture. To make this commercial, it's important understand performance device. work explores physics with detailed physical insight into operation and failure under ESD stress conditions. The has deep N+ implant underneath P+ source...