H. Ahmed

ORCID: 0000-0003-0895-8873
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About
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Research Areas
  • Quantum and electron transport phenomena
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Brain Tumor Detection and Classification
  • Physics of Superconductivity and Magnetism
  • Quantum Computing Algorithms and Architecture
  • Advanced Neural Network Applications
  • COVID-19 diagnosis using AI
  • Machine Learning and ELM
  • Surface and Thin Film Phenomena
  • Mechanical and Optical Resonators
  • Cell Image Analysis Techniques
  • AI in cancer detection
  • Embedded Systems Design Techniques
  • Carbon Nanotubes in Composites
  • Neural Networks and Applications
  • Smart Systems and Machine Learning
  • Quantum Information and Cryptography
  • Molecular Junctions and Nanostructures
  • Artificial Intelligence in Healthcare and Education
  • Advanced Decision-Making Techniques
  • Electronic and Structural Properties of Oxides
  • Retinal Imaging and Analysis

Canadian International College
2023

Troy University
2023

University of Cambridge
1990-2002

Cambridge Microelectronics (United Kingdom)
1991-1996

Cavendish Hospital
1986-1992

We present results on the transport properties of 2D electron gas in a narrow channel formed by split gate GaAs-AlGaAs heterojunction field-effect transistor. There are both quantum-interference and interaction corrections to conductivity. find that temperature dependence phase relaxation length is agreement with recent theory based scattering electromagnetic fluctuations. Beyond regime quantum interference conductivity varies as ${T}^{2}$.

10.1103/physrevlett.56.1198 article EN Physical Review Letters 1986-03-17

A novel negative magnetoresistance effect is found in four-terminal measurements of the voltage drop across a short constriction variable width high-mobility two-dimensional electron gas. The interpreted as suppression by magnetic field geometrical resistance ballistic regime. Quantitative agreement with simple model based on Landauer-type formula obtained.

10.1103/physrevb.37.8534 article EN Physical review. B, Condensed matter 1988-05-15

The conductance of a narrow two-dimensional electron gas in GaAs: ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As heterojunction fluctuates as function magnetic field. variance and correlation length the fluctuations have been measured for number temperatures, phase-breaking is found to vary small negative power temperature.

10.1103/physrevb.36.4514 article EN Physical review. B, Condensed matter 1987-09-15

We report far infrared (FIR) studies of plasmons in spatially modulated two-dimensional electron gases (2DEGs) AlGaAs/GaAs heterostructures using biased overlaid metal gratings, including interdigitated both as optical couplers and modulating gates. Comparison the experimental results with predictions scattering matrix calculations FIR response a 2DEG presence perfectly conducting lamellar grating allow us to deduce spatial variation number density distribution function bias. For gates, can...

10.1063/1.350462 article EN Journal of Applied Physics 1992-06-15

We have studied the quantized conductance of a one-dimensional ballistic channel in two-dimensional electron gas back-gated GaAs/AlGaAs heterostructure. A standard Schottky split-gate fabricated with electron-beam lithography techniques is used to define channel, but we incorporate an epitaxially grown situ back-gate, situated ∼1 μm below gas, provide additional control carrier density. Quantized steps can be induced by changing bias on either gate, highlighting self-consistent nature...

10.1063/1.106849 article EN Applied Physics Letters 1992-06-01

We have used lateral injection of hot ballistic electrons to investigate heating a two-dimensional electron gas. The temperature was found oscillate with increasing energy, confirming optic phonon emission as the dominant inelastic process for excess energy above 36 meV. Our technique provides method determining electron-electron scattering time function both and magnetic field. In quantum Hall regime we that hot-electron suppressed dissipationless transport, which interpreted resulting from...

10.1103/physrevb.45.6309 article EN Physical review. B, Condensed matter 1992-03-15

The current–voltage and noise characteristics of vacuum nanoelectronic devices, including nanoscale field-emission diodes nanotriodes, are presented. turn-on voltage for field emission in these devices is about 8 V, independent ambient temperature, currents up to 10 nA obtained. Time-independent fluctuations observed the that persist down 20 K. In case nanotriode, repeatable different sweeps performed both at same temperatures. These measurements, coupled with a model which includes an...

10.1116/1.1314388 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2000-11-01

Multiclass image classification is considered a challenging task in computer vision that requires correctly classifying an into one of the multiple distinct groups.In recent years, quantum machine learning has emerged as topic significant interest among researchers.Using concepts such superposition and entanglement, algorithms provide more efficient method processing high-dimensional data.This paper proposes new model using quantum-inspired convolutional neural network architecture or,...

10.32782/cmis/3392-15 article EN 2023-01-01

Low-temperature electrical and magnetoresistance measurements have been performed on free-standing supported wires of n-type GaAs doped to 1017 cm-3 over the temperature range 0.47-4.2 K. These were triangular in cross-section, with widths 600-900 nm lengths 3.2-10 mu m. The authors report that observed increase resistance for temperatures below 4.2 K can be interpreted as being due a combination weak localisation 3D electron-electron interaction effects. They also show how results described...

10.1088/0953-8984/2/7/011 article EN Journal of Physics Condensed Matter 1990-02-19

The magnetoresistance anomalies that are observed in multiprobe quantum wires (such as quenching of the Hall effect and negative bend resistance) have been investigated using a semiclassical billiard-ball model includes effects diffuse boundary scattering. This modeling predicts two peaks expected wire which there is significant amount One peak due to scattering other specular junctions at either end wire. also well-known resistance both be enhanced by explained terms way affects angular...

10.1063/1.360680 article EN Journal of Applied Physics 1995-07-01

Quantum transport effects have been explored in semiconductors using a two-dimensional electron gas confined by lateral nanostructures. Once the sizes and layer thickness are reduced to be smaller than phase coherence length of electrons material, quantum become pronounced; it is this aspect nanofabrication that considered. The structures defined number different methods considered techniques required make them described. Special beam lithography systems processes range focused ion...

10.1109/5.92073 article EN Proceedings of the IEEE 1991-01-01

Various neurological problems such as brain tumors, strokes, and Alzheimer's disease can all be detected treated with the help of medical imaging. The level image analysis determines how accurate reliable a diagnosis made using Magnetic Resonance Imaging (MRI) will be. As result, intricate design structures well presence noise aberrations in recorded pictures might make it difficult at times. This study proposes Quantum Convolutional Neural Networks (QCNN)-based classification model for MRI...

10.1109/imsa58542.2023.10217624 article EN 2023-07-15

We describe some of the physics peculiar to electron transport in quasi-one-dimensional systems semiconductors, with particular reference three which it has been investigated: ultra-fine free-standing wires doped GaAs, split-gate high-electron-mobility transistor (with and without a back-gate vary carrier concentration), vertical quantum pillars fabricated from multiple-barrier heterostructure material. They are all waveguide structures, characterized by ⩽0.1 μm feature sizes two spatial...

10.1088/0031-8949/1992/t45/042 article EN Physica Scripta 1992-01-01

10.1142/9789812776716_0004 article PT Foundations of Quantum Mechanics in the Light of New Technology 2002-10-01
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