A5101962121- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Seismic Waves and Analysis
- Seismic Imaging and Inversion Techniques
- earthquake and tectonic studies
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Geological and Geochemical Analysis
- Hydraulic Fracturing and Reservoir Analysis
- Reservoir Engineering and Simulation Methods
- Hydrocarbon exploration and reservoir analysis
- Seismology and Earthquake Studies
- ZnO doping and properties
- Advanced ceramic materials synthesis
- Semiconductor materials and interfaces
- Geological Modeling and Analysis
- Metal and Thin Film Mechanics
- Plasma Diagnostics and Applications
- Silicon Carbide Semiconductor Technologies
- Gas Sensing Nanomaterials and Sensors
- Ammonia Synthesis and Nitrogen Reduction
- Inorganic Chemistry and Materials
Virginia Tech
2013-2017
The University of Texas at Austin
1994-2016
University of Texas Institute for Geophysics
2016
Qingdao University of Science and Technology
2013
IBM (United States)
2002-2003
The impact of nitrogen (N) concentration and distribution on the electrical reliability properties rapid-thermally NO-annealed oxides is studied. use NO-annealing thermally grown SiO2 provides an excellent way to isolate effects N, since this method allows for incorporation varying N profiles in oxide without a simultaneous increase dielectric thickness. Results show that under gate substrate Fowler–Nordheim injection are highly sensitive profile dielectric. While interface endurance (ΔDit)...
In this letter, we report on the impact of suppression boron diffusion via nitridation SiO2 gate oxide integrity and device reliability. subjected to rapid thermal in pure nitric (NO) is used fabricate thin oxynitride dielectrics. Both n+ polycrystalline silicon (polysilicon) gated n-MOS (metal–oxide semiconductor) p+-polysilicon p-MOS devices were anneals different times study effect dopant integrity. As expected, an advanced dielectric will effectively alleviate boron-penetration-induced...
In this paper, we report for the first time, growth of high quality ultrathin oxynitrides formed by nitridation SiO/sub 2/ in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N/sub 2/O oxidation silicon. A significant improvement interface endurance and charge trapping properties, under constant current stress, to pure O/sub 2/-grown 2/O-grown oxides observed. The NO will have a great impact on future CMOS EEPROM...
Abstract A refraction and wide‐angle reflection seismic profile along the axis of Salton Trough, California Mexico, was analyzed to constrain crustal upper mantle velocity structure during active continental rifting. From northern Sea southern Imperial Valley, crust is 17–18 km thick approximately one‐dimensional. The transition at depth from Colorado River sediment underlying crystalline rock gradual not a depositional surface. ~3 ~8 interpreted as metamorphosed by high heat flow. Deeper...
Abstract Ongoing oblique slip at the Pacific–North America plate boundary in Salton Trough produced Imperial Valley (California, USA), a seismically active area with deformation distributed across complex network of exposed and buried faults. To better understand shallow crustal structure this region connectivity faults seismicity lineaments, we used data primarily from Seismic Imaging Project to construct three-dimensional P-wave velocity model down 8 km depth profile 15 depth, both 1 grid...
We describe an advanced 0.13 /spl mu/m CMOS technology platform optimized for density, performance, low power and analog/mixed signal applications. Up to 8 levels of copper interconnect with the industry's first true low-k dielectric (SiLK, k=2.7) (Goldblatt et al., 2000) result in superior performance at aggressive pitches. A 2.28 mu/m/sup 2/ SRAM cell is manufactured high yield by introducing elongated local interconnects on contact level without increasing process complexity. Trench based...
We have investigated polarity dependence of dielectric breakdown under constant current stress in scaled SiO/sub 2/ dielectrics. Results show that high-field-induced interface state generation is reduced as oxide thickness scales down and charge-to-breakdown (Q/sub BD/) for positive gate bias (+V/sub g/) increases with decreasing thickness. However, Q/sub BD/ negative (-V/sub shows an opposite trend to BD/(+V/sub g/), i.e. BD/(-V/sub decreases dramatically Therefore, there increased when...
In this paper, we demonstrate the superior diffusion barrier properties of NO-nitrided SiO/sub 2/ in suppressing boron penetration for p/sup +/-polysilicon gated MOS devices. Boron effects have been studied terms flatband voltage shift, decrease inversion capacitance (due to polysilicon depletion effect), impact on interface state density, and charge-to-breakdown. Results show that 2/, as compared conventional thermal exhibits much higher resistance penetration, therefore, is very attractive...
We report a high-performance CMOS operating at 1.5 V with 11.9 ps nominal inverter delay 0.06/0.08/spl mu/m L/sub eff/ for NMOS and PMOS. Both PMOS devices, 3.6 nm inversion T/sub ox/, have the best current drive reported to date fixed I/sub off/. Low-Vt NMOS/PMOS achieved compensation no degradation in short-channel behavior result 9.7 delay. These devices are incorporated 0.18 /spl technology that offers 4.2 mu/m/sup 2/ SRAM cell dual gate oxide interfacing 2.5 V.
Abstract The M w 5.8 earthquake that occurred in Louisa County, Virginia, on 23 August 2011 provided an opportunity to record with several “high density” seismic arrays, addition traditional, sparse temporary networks. Traditional aftershock networks consist of a few dozen stations spread over tens kilometers. As result, the recorded waveforms suffer from spatial aliasing is so severe many types waveform processing are not applicable. Here we report results recording large number oil...
The Imperial and Coachella Valleys are being formed by active plate-tectonic processes. From the Valley southward into Gulf of California, plate motions rifting continent apart. In Valley, plates sliding past one another along San Andreas related faults (fig. 1). These processes build stunning landscapes region, but also produce damaging earthquakes. Rupture southern section Fault (SAF), from to Mojave Desert, is believed be greatest natural hazard that California will face in near future....
We present a detailed study of electrical characteristics sub-3 nm gate oxides grown on nitrogen implanted Si substrates (N/sub 2/ I/I oxides). The new results that advance the understanding N/sub are following: lower tunneling current, higher TDDB lifetime and reduced defect density reported in for first time. In addition, excellent device circuit performance demonstrated dual-gate CMOSFETs with VI down to channel lengths under 0.10 /spl mu/m.
Abstract Plate‐boundary rifting between transform faults is opening the Imperial Valley of southern California and rift rapidly filling with sediment from Colorado River. Three 65–90 km long seismic refraction profiles across along valley, acquired as part 2011 Salton Seismic Imaging Project, were analyzed to constrain upper crustal structure transition underlying crystalline rock. Both first arrival travel‐time tomography frequency‐domain full‐waveform inversion applied provide P‐wave...
We present 2‐D numerical simulations of two‐phase flow in seafloor hydrothermal systems using the NaCl‐H 2 O code Fully Implicit Seafloor Hydrothermal Event Simulator to better understand phase separation and evolution temperature salinity vent fluids systems. consider a fixed pressure 25 MPa, range homogeneous isotropic permeabilities, various constant bottom temperatures represent subaxial magma chamber. The goal is investigate how permeability maximum affect fluid salinity. show that heat...
We report nonlinear characteristics of Weibull time-to-breakdown distributions and non-Poisson area scaling behavior observed on ultra thin oxides. develop a numerical model to quantitatively account for these effects in the context current modulation due oxide thickness variations. It is found that without proper treatment effect, use slopes at higher failure percentiles can lead erroneous pessimistic reliability projection.
This paper reports the effects of post-deposition rapid thermal annealing on electrical characteristics chemical vapor deposited (CVD) Ta/sub 2/O/sub 5/ (/spl sim/10 nm) NH/sub 3/-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different conditions are compared: a) 800/spl deg/C O/sub 2/ (RTO) 20 sec followed by N/sub (RTA) 40 sec, b) RTO 60 and c) 900/spl see. Results show that an increase in temperature time decreases leakage current at...
MOSFETs with oxide thickness from t/sub ox/=1.4 to 2.2nm have been stressed for times exceeding one year, at voltages in the range V/sub g/=1.9-4V. The data are compared previous model calculations. voltage acceleration of charge-to-breakdown (Q/sub BD/) is explained terms a weak yet statistically significant dependence critical defect density breakdown (N/sup BD/), and stronger than expected generation probability (P/sub g/) thinnest oxides studied.
Different PMOS hot carrier degradation mechanisms are observed in a 0.13 /spl mu/m CMOS technology with ultra-thin gate oxide. Surprisingly, the voltage plays significant role total Idsat degradation, even at low temperature (40/spl deg/C). Hole trapping instead of electron is under max condition for PMOS. It also shown that nitrogen affects NMOS and differently.
Abstract A new nitriding technology using active screen plasma (ASPN) was carried out in order to increase the speed of AISI 5140 steel. The fast process is based upon different solubility and diffuse rate nitrogen atoms austenite ferrite steel respectively. First, samples were heated above eutectoid temperature for a few minutes dissolve large amount form nitrogen-rich layer on surface nitrided samples. Then, decreased below kept long time make dissolved into ferrite. two processes...
High quality, ultrathin (<30 /spl Aring/) SiO/sub 2//Si/sub 3/N/sub 4/ (ON) stacked film capacitors have been fabricated by in situ rapid-thermal multiprocessing. Si/sub was deposited on the RTN-treated poly-Si chemical vapor deposition (RTCVD) using SiH/sub and NH/sub 3/, followed low pressure reoxidation N/sub 2/O (LRTNO) or O/sub 2/ (LRTO) ambient. While use of suppresses severe oxidation film, 2/O-reoxidation significantly improves quality ON resulting with excellent electrical...
Summary Following the Mw 5.8 23 August, 2011 central Virginia earthquake, unusually dense arrays were deployed over epicentral region. One of objectives this study was to demonstrate how unaliased recordings aftershocks can be used image geologic structures using reflection techniques. However, applying standard common point processing earthquake sources is inappropriate because are not at surface. An occurring several kilometers beneath a surface receiver array has more natural analog: an...
The significant advantages of reoxidation NH3-nitrided SiO2 using N2O, as opposed to O2, in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared those pure O2-reoxidised SiO2. Significant reduction nitridation-induced traps by N2O is mainly responsible for these improvements.