A5101761399- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
National Yang Ming Chiao Tung University
2023
Abstract In this study, the implementation of Cu-based materialization in GaN high electron mobility transistor (HEMT) was investigated. The TiN proposed Ti/TiN/Cu Ohmic metal stack mitigated diffusion Cu and alloy formation at interface, resulting higher stability. specific contact resistance (ρc) found to be 6.68×10−6 Ω-cm², comparable that Au-based counterparts other published articles. Additionally, HEMTs, fabricated with TiN/Cu gate metals, showed superior electrical properties (IDS:...
Abstract Ti/TiN/Cu is established to be an enabling alternative the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower resistance and smoother surface morphology proven compatible with AlGaN/GaN high-electron-mobility transistors (HEMTs) device processing. TiN layer serves effective Cu-diffusion barrier no detectable was observed when subjected thermal treatment up 600 °C. There a tendency of N-diffusion across Ti/GaN interface near which...