Markus Müller

ORCID: 0000-0003-1058-1649
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About
Contact & Profiles
Research Areas
  • Semiconductor Quantum Structures and Devices
  • Radio Frequency Integrated Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Photonic and Optical Devices
  • Quantum Information and Cryptography
  • X-ray Diffraction in Crystallography
  • Intermetallics and Advanced Alloy Properties
  • Crystallization and Solubility Studies
  • Strong Light-Matter Interactions
  • Semiconductor Lasers and Optical Devices
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Quantum and electron transport phenomena
  • Inorganic Chemistry and Materials
  • Magnesium Oxide Properties and Applications
  • Inorganic Fluorides and Related Compounds
  • Luminescence Properties of Advanced Materials
  • Electronic and Structural Properties of Oxides
  • ZnO doping and properties
  • Muon and positron interactions and applications
  • Advanced Chemical Physics Studies
  • Quasicrystal Structures and Properties
  • Thermal Radiation and Cooling Technologies
  • Quantum, superfluid, helium dynamics
  • Thermal properties of materials

Technische Universität Dresden
2015-2025

Spacebel (Belgium)
2024

Senatsverwaltung für Stadtentwicklung und Wohnen
2024

Geographic Information Management (Belgium)
2024

Institut national de l’information géographique et forestière
2024

Environmental Systems Research Institute (United States)
2024

Justus-Liebig-Universität Gießen
1995-2023

University of Stuttgart
2000-2022

Joint Quantum Institute
2019-2022

University of Maryland, College Park
2019-2022

Meet on the edge: The relative concentration of corner and edge ions in a cubelike nanoparticle critically depends size nanoparticle. On MgO nanocubes this ratio is reflected by their optical properties (see picture).

10.1002/anie.200500663 article EN Angewandte Chemie International Edition 2005-07-06

In this Letter, we present narrow line width (7 μeV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct dot layers. Our study paves the way for large-scale integration dots into photonic circuits as sources.

10.1021/nl303668z article EN Nano Letters 2012-11-30

We investigate both experimentally and theoretically a simple yet more robust flexible alternative to Rabi oscillation-type biexciton preparation protocols traditionally used for semiconductor quantum dots. The dot is excited by strong laser pulse positively detuned from the two-photon resonance yielding an on demand initialization of state making use phonon-induced thermalization photon dressed states. It shown that excitation pulses in picosecond range, stable high occupation up...

10.1103/physrevb.91.161302 article EN Physical Review B 2015-04-09

We demonstrate the emission of polarization-entangled photons from a single semiconductor quantum dot in telecom C-band (1530 nm–1565 nm). To reach this telecommunication window, well-established material system InAs dots embedded InGaAs barriers is utilized with an additional insertion metamorphic buffer to spectrally shift desired wavelengths. For observation photon pairs, biexciton-exciton cascade displaying intrinsically low fine-structure splitting investigated by means...

10.1063/1.4994145 article EN Applied Physics Letters 2017-09-25

We demonstrate the simultaneous dressing of both vacuum-to-exciton and exciton-to-biexciton transitions a single semiconductor quantum dot in high-Q micropillar cavity, using photoluminescence spectroscopy. Resonant two-photon excitation biexciton is achieved by spectrally tuning emission with respect to cavity mode. The couples amplifies Rabi frequency likewise resonant continuous wave laser, driving transitions. observe strong-field splitting lines, which depend on field amplitude...

10.1103/physrevb.93.115308 article EN Physical review. B./Physical review. B 2016-03-14

Multiphoton entangled states such as ``N00N states'' have attracted a lot of attention because their possible application in high-precision, quantum enhanced phase determination. So far, N00N been generated spontaneous parametric down-conversion processes and by mixing classical light on beam splitter. Here, contrast, we demonstrate superresolving measurements based two-photon dot single-photon sources making use the Hong-Ou-Mandel effect By means pulsed resonance fluorescence charged...

10.1103/physrevlett.118.257402 article EN Physical Review Letters 2017-06-22

A hyperentangled state of light represents a valuable tool capable reducing the experimental requirements and resource overheads, it can improve success rate quantum information protocols. Here, we report on demonstration polarization time-bin photon pairs emitted from single dot. We achieved this result by applying resonant coherent excitation dot system with marginal fine structure splitting. Our results yield fidelities to maximally entangled 0.81(6) 0.87(4) in time bin, respectively.

10.1103/physrevlett.121.110503 article EN Physical Review Letters 2018-09-12

Abstract Durch Solvothermalsynthese in wasserfreier HF gelang es endlich erstmals, TiF 4 aus (O 2 ) Ti 7 F 30 Form solcher Einkristalle darzustellen, die eine Strukturbestimmung ermöglichten. Die farblosen, transparenten Nadeln kristallisieren der Raumgruppe Pnma–D (Nr. 62) mit a = 281,1, b 384,8, c 956,8 pm, Z 12. bildet einen eigenen Strukturtyp, dessen charakteristisches Merkmal von einander isolierte, 6 ‐Oktaedern aufgebaute Säulen sind (Kolumnarstruktur).

10.1002/zaac.19956210720 article DE Zeitschrift für anorganische und allgemeine Chemie 1995-07-01

Semiconductor quantum dots embedded in micropillar cavities are excellent emitters of single photons when pumped resonantly. Often, the same spatial mode is used to both resonantly excite a quantum-dot state and collect emitted photons, requiring cross polarization reduce uncoupled scattered laser light. This inherently reduces source brightness 50%. Critically, for some applications total efficiency from generation detection must be over Here, we demonstrate resonant-excitation approach...

10.1364/optica.382273 article EN cc-by Optica 2020-02-18

We describe experiments demonstrating an exciton-polariton laser and amplifier based on incoherent reservoir in CdTe microcavity quantum wells. The gain mechanism is real excited exciton-exciton scattering, which excitons created at large in-plane wave vectors are thermalized accumulate the bottleneck lower polariton states smaller vectors. Because scattering rate for saturation density higher than that GaAs, threshold spontaneous lasing more easily reached case of with respect to GaAs....

10.1103/physrevb.65.165314 article EN Physical review. B, Condensed matter 2002-04-05

Site-specific functionalization of oxide nanostructures gives rise to novel optical and chemical surface properties. In addition, it can provide deeper insights into the electronic structure associated materials. We applied chemisorption molecular hydrogen, induced by ultraviolet (UV) light, followed vacuum annealing MgO nanocubes selectively decorate three-coordinated oxygen ions (oxygen corner sites, for simplicity) with protons. Fully dehydroxylated exhibit 3.2 +/- 0.1 eV...

10.1021/ja0736055 article EN Journal of the American Chemical Society 2007-09-25

Abstract With the prospect of realizing innovative technologies by large‐area fabrication at low cost and high throughput, printing coating are being intensively researched for deposition functional films. One promising technology is solution shearing, which has been studied as a technique organic semiconductors but not to greater extent dielectric layers. Therefore, shearing high‐quality poly(4‐vinylphenol) dielectrics investigated, utility these films ultra‐smooth substrates transistors...

10.1002/aelm.201900067 article EN Advanced Electronic Materials 2019-04-08

We present an experimental study of the photoluminescence dynamics cavity polaritons in low excitation regime, on a picosecond scale, as function photon-exciton detuning. Time-integrated measurements k space give direct evidence for existence large nonequilibrium polariton distribution peaked at crossing point photon and exciton dispersion curves, when detuning is negative. The relaxation-time dependence explains kinetic origin this peak, showing k-space relaxation edge, so-called bottleneck.

10.1103/physrevb.62.16886 article EN Physical review. B, Condensed matter 2000-12-15

The surfaces of alkaline earth oxides emit bright, colored light and have potential as thermally stable inorganic phosphors with adsorption-dependent optical properties. doping MgO nanocubes low-coordinated BaO surface elements (see figure) clearly demonstrates that chemical manipulation the solid–gas interface provides an efficient means to adjust properties powders in controlled gas atmospheres.

10.1002/adma.200800560 article EN Advanced Materials 2008-12-12

In MgO nanocube powders surface excitons can separate and the resulting charge carriers provide reactive adsorption sites at well-defined elements. We employed photoluminescence (PL) emission bands originating from photoexcitation of corners edges as quantitative probes to explore their chemical reactivity towards molecular hydrogen. Surface which form exhibit similar cross-sections for separation in vacuum. The edge excitons, however, is significantly enhanced hydrogen atmosphere when...

10.1039/c2nr31844j article EN Nanoscale 2012-01-01

The theory, design and implementation of a millimeter-wave (mm-wave) common-collector voltage-controlled differential Colpitts oscillator (VCO) using 130nmSiGe:C BiCMOS technology is presented. VCO was optimized to provide wide analog-only (continuous) tuning range 81 91 GHz (11.6%) for high-precision radar applications. capability makes use single varactor pair which eliminates the need digital control signals, switched-capacitor banks peripheral control/interface circuitry. Thus, this...

10.1109/sirf53094.2022.9720059 article EN 2022-01-16

Uniformly sized and shaped nanoparticles are well suited for the quantitative characterization of optical-powder properties. For first time, quantum yields related to photoluminescence emissions that originate from photoexcitation MgO nanocube corners edges measured. In addition, surfaces these doped with submonolayer barium, which oxidizes during adsorption onto nanocrystal transforms in O(2) atmosphere into BaO. UV-Vis diffuse reflectance spectroscopy is employed explore whether 10(-3)...

10.1002/smll.200901662 article EN Small 2009-12-22

The interaction between PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) and rare gas or para-hydrogen samples is studied by means of laser-induced fluorescence excitation spectroscopy. comparison spectra embedded in a neon matrix attached to large clusters shows that these organic molecules reside on the surface when doped pick-up technique. can adopt different conformations argon, which implies such has well-defined structure not liquid fluxional properties. Moreover, precise analysis...

10.1063/1.4759443 article EN The Journal of Chemical Physics 2012-10-22

As a fundamental building block for quantum computation and communication protocols, the correct verification of two-photon interference (TPI) contrast between two independent light sources is utmost importance. Here, we experimentally demonstrate how frequently present blinking dynamics changes in emitter brightness critically affect Hong-Ou-Mandel-type (HOM) correlation histograms remote TPI experiments measured via commonly utilized setup configuration. We further exploit this qualitative...

10.1103/physrevb.97.195414 article EN Physical review. B./Physical review. B 2018-05-09

The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{\text {T}}$ </tex-math></inline-formula> ) maximum oscillation {max}}$ 300 500 GHz was characterized from 298 K down to 4.3 K. At K, the increases by 65% measured 317 (at K) 525 GHz. increase starts saturate below 73 physical reasons for...

10.1109/jxcdc.2021.3130041 article EN cc-by-nc-nd IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2021-11-23
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