Manish Kumar

ORCID: 0000-0003-1173-853X
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About
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Research Areas
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Antenna Design and Analysis
  • Low-power high-performance VLSI design
  • Integrated Circuits and Semiconductor Failure Analysis
  • Coding theory and cryptography
  • Nanofluid Flow and Heat Transfer
  • Quantum Computing Algorithms and Architecture
  • Video Surveillance and Tracking Methods
  • Analog and Mixed-Signal Circuit Design
  • Heat Transfer Mechanisms
  • Advanced Antenna and Metasurface Technologies
  • RFID technology advancements
  • Nanowire Synthesis and Applications
  • Silicon and Solar Cell Technologies
  • Silicon Carbide Semiconductor Technologies
  • IoT-based Smart Home Systems
  • Microwave Engineering and Waveguides
  • VLSI and FPGA Design Techniques
  • Face and Expression Recognition
  • Electric Power System Optimization
  • GaN-based semiconductor devices and materials
  • Statistical Distribution Estimation and Applications
  • Advanced Memory and Neural Computing

University of Delhi
2025

Sharda University
2024

Integral University
2023

Motilal Nehru National Institute of Technology
2014-2023

Babu Banarasi Das University
2023

Kurukshetra University
2021

University of Cincinnati
2012

Babasaheb Bhimrao Ambedkar Bihar University
2009

10.1007/s40819-015-0027-9 article EN International Journal of Applied and Computational Mathematics 2015-01-29

On scaling the conventional MOSFET in sub-micrometer regime, short channel effects (SCEs) deteriorates device performance. Owing to a new structure (FinFET) has been introduced. This paper presents effect of variation different parameters FinFET such as structure, dimension, doping and oxide material used for various electrical characteristics (on-state current (Ion), Subthreshold Swing (SS), off-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/sces.2014.6880096 article EN Students Conference on Engineering and Systems 2014-05-01

Home automation is becoming increasingly popular as people seek to simplify their lives and improve living spaces. In this project, we explore how Husky Lens, an AI-powered image recognition sensor, can be used control home systems with the help .of Arduino board a relay. By training Lens recognize different hand gestures or objects, use these objects various appliances devices in our homes. For instance, user simply wave front of sensor turn on off lights fan, object such Smartphone...

10.55529/jaimlnn.43.41.52 article EN cc-by Journal of Artificial Intelligence Machine Learning and Neural Network 2024-04-01

This paper evaluates the performance of Dual Material Double Gate Dielectric Modulated biosensor (mainly sensitivity) by varying other parameters like overlap length, positioning biomolecule in cavity and work function. Comparison is also made between single material gate dual structures it shown that with a drain performs better than gate. The nanocavity formed overlapping on side which decreases ambipolar current TFET when placed inside cavity, based its dielectric constant, change...

10.1109/sces55490.2022.9887766 article EN 2022-07-01

In this paper we will do the analysis of gate engineering impact on tri state inverter performance for application SOC that is system chip with help different high dielectric material.The materials used in electronic circuits preventing tunnelling effect which increase thermally generated current.In order to reduce Thermally current occur s circuit can replace sio 2 having constant.Tri State Inverter designed by use microwind tool or simulator.The Device analyse various parameter.It measured...

10.5120/ijca2016908357 article EN International Journal of Computer Applications 2016-02-17

This work presents the analysis of NCJLNW for low power analog/RF applications; this device shows reduced consumption, SCEs, smaller leakage and higher Ion/Ioff ratio. The results indicate that proposed improves intrinsic gain, cut-off frequency, transconductance reduces DIBL. band-energy, surface-potential electric-field has also shown promising results. Ring oscillator been designed using device; lower voltage operation resulting into high noise immunity. frequency oscillation is found to...

10.35940/ijitee.d9464.0312423 article EN International Journal of Innovative Technology and Exploring Engineering 2023-02-24

This article presents the stability and noise analysis of negative capacitance cylindrical gate junction-less transistor (NC-CyJLT). Application concept has fetched very good results, where a sufficient reduction in power dissipation reduced subthreshold swing is achieved. Results indicate that NC-CyJLT devices have flicker thermal noise, show significant (63.6%) low-frequency 92.1% noise. Further, it been proved least affected due to temperature, hence, improves with low-power which...

10.1080/10584587.2023.2173441 article EN Integrated ferroelectrics 2023-02-12

The design of CMOS circuits employing nanoscale MOSFETs has grown extremely complex in recent years due to new obstacles such as mobility deterioration and short channel effects device modeling. Gate engineering alleviate these while improving carrier mobility, leading better drain current transconductance. influence Channel techniques on the properties multi-gate MOS devices is explored described this study. This manuscript includes a comprehensive investigation effect metal gate work...

10.1109/icpces57104.2023.10075985 article EN 2023-01-06

MHD flow past over oscillating vertical plate with variable temperature and mass diffusion through a porous medium in the presence of Hall current effect chemical reaction is studied here. The fluid model contains partial differential equations momentum, energy equations. Laplace-transform technique used to find exact solution involved this paper. resultant velocity profile discussed help graphs drawn for different parameters like, inclination magnetic field, parameter, phase angle parameter...

10.46939/j.sci.arts-23.1-c02 article EN cc-by-nc-nd Journal of Science and Arts 2023-03-27

The tremendous research and development has provided a number of wireless technologies standards used for communication in Industrial Wireless Sensor Networks. primary reason writing this article is to study all available identify their area usage, different parameters like power consumption, functionality, range, transmission speed, data type etc. Another important main select best suitable technology our next research. Various established HART, Zigbee, ISA 100.11a Dash7 have been compared...

10.36948/ijfmr.2023.v05i04.4835 article EN cc-by-sa International Journal For Multidisciplinary Research 2023-07-31
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