Advanced epitaxial growth techniques permit the use of pseudomorphic Si/sub 1-x/Ge/sub x/ alloys in silicon technology. The smaller bandgap these allows for a variety novel band-engineered structures that promise to enhance silicon-based technology significantly. authors discuss and properties then focus on their applications, especially x/-base heterojunction bipolar transistor (HBT). They show HBTs system allow decoupling current gain intrinsic base resistance. Such devices can be made by...

Strain compensation is an important aspect of heterostructure engineering. In this letter, we discuss the synthesis pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on a silicon (100) substrate by molecular beam epitaxy using solid sources controlled strain that results from introduction ternary system. The C into substitutional sites in crystal lattice kinetically stabilized low-temperature growth conditions (400–550 °C) against thermodynamically favored silicon-carbide phases. constant...

The devices were fabricated using molecular-beam epitaxy (MBE), low-temperature processing, and germanium concentrations of 0, 6%, 12%. transistors demonstrate current gain, show the expected increase in collector as a result reduced bandgap due to Ge incorporation base. For 1000-AA base device containing 12% Ge, six-times was measured at room temperature, while 1000-times observed 90 K. temperature dependence Si/sub 0.88/Ge/sub 0.12/ transistor is consistent with shrinkage 50 meV....

In this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without generation of threading dislocations within layer. This is achieved by depositing on an ultrathin silicon insulator (SOI) substrate with superficial thickness less than thickness. Initially, thin Si put under tension due to equalization between and layers. Thereafter, created in plastic deformation. Since are formed glide layer, no dislocation ever introduced upper material, which...

Moore's law has so far relied on the aggressive scaling of CMOS silicon minimum features over 1000× for four decades, and recently, adoption innovative features, such as Cu interconnects, low-k dielectrics strained channels, high-k materials gate dielectrics, resulting in a better power performance, cost per function, density every generation. This spawned vibrant system-on-chip (SoC) approach, where progressively more function been integrated single die. The integration multiple dies...

Ordering in epitaxial Si/Ge alloys grown by molecular-beam epitaxy has been observed several authors. Attempts to explain this unusual phenomenon on the basis of bulk thermodynamic properties alloy have failed. In Letter we show that ordering is not an equilibrium property, but rather result surface growth kinetics. We attribute atomic-scale stresses present reconstructed Si(001) during growth, leading double-layer segregation Ge and Si along one four equivalent 〈111〉 directions. This...

The influence of growth temperature on the interfacial abruptness strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify presence GeGe and GeSi bonds medium energy ion scattering characterize spatial extent layers. Atomically sharp interfaces are observed for temperatures just above crystalline amorphous transition range, with pseudomorphic found >∼250 °C. Asymmetric mixing into capping layer occurs during at higher...

We find that heavy adsorbed dopant layers, up to several tens of equivalent monolayers, can be made produce heavily doped n (Sb) and p (Ga) layers in molecular beam epitaxy grown silicon. By preadjusting the adlayer concentration required value while temporarily arresting silicon growth, arbitrarily sharp profiles any sequence type with very high or low levels grown. Examples are given p+ i n++p+ pp+ structures transition thickness L?300 Å, controlled layer thicknesses ∼1000 Å. Such...

We have synthesized pseudomorphic Si1−yCy (y≤0.05) alloys and strained layer superlattices on silicon by molecular beam epitaxy using solid sources for carbon silicon. The introduction of C into substitutional sites in the lattice is kinetically stabilized low-temperature growth conditions (500–600 °C) relatively high Si fluxes, against extremely low solubility (10−6 at 1420 thermodynamically favored carbide phases. Higher temperature leads to an islanded morphology. At lower temperatures,...

Since is perhaps the most attractive candidate for self‐aligned silicide technology, it important to understand high temperature process limitations of this material. Thin films are formed on single‐crystal silicon, or polysilicon, and, when annealed in He at temperatures 900°C higher, result degradation surface morphology and a drastic increase sheet resistance. Eventually, isolated agglomerates case annealing. In nitrogen annealing, they covered with . Shallow junctions thin layer top were...

Crystal growth by molecular beam epitaxy (MBE) occurs under conditions of high supersaturation. The classic theory Burton, Cabrera, and Frank (BCF) is based on the assumption that surface steps move slowly. Consequently, it requires modifications to be applicable MBE because velocities may large. In addition, such are asymmetric structures, as observed experimentally field ion microscopy, capture probabilities from above below a step must differ markedly. Hence adatom concentration...

Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling stress results show no degradation of TSV or BEOL structures, device data indicate that there is significant impact from processing and/or proximity.

The scaling of package and circuit board dimensions is central to heterogeneous system integration. We describe our solderless direct metal-to-metal low pressure (<; 70 MPa) temperature 250 °C) thermal compression bonding (TCB) technique present preliminary results dielet (4 - 25 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> area) attach a rigid Silicon Interconnect Fabric (SiIF) with up two levels wiring (2 10 μm pitch). Dielets...

Si0.5Ge0.5/Si superlattices and thick Si0.5Ge0.5 layers grown on (100), (111), (110) Si surfaces by molecular‐beam epitaxy (MBE) exhibit different growth morphologies defect structures. The best morphology is achieved (100) at low temperatures (∼400 °C), while thin defect‐free SiGe higher (∼600 °C) tend to undulated due the mismatch strain. Strained (111) are much more susceptible twin formation. a long‐range order along 〈111〉 directions. Our results indicate that such ordering occurs only...

We observe, for the first time, long-range order in thick, unstrained SiGe alloys, with and without boron doping. This ordering occurs along four equivalent 〈111〉 directions. The ordered domains are randomly shaped, corresponds to alternating double layers of Si Ge. Bond energy arguments used explain formation this new phase.

The authors present a high-quality dielectric system for use with Si/sub 1-x/Ge/sub x/ alloys. employs plasma-enhanced chemical vapor deposited (PECVD) SiO/sub 2/ on thin (6-8-nm) layer of pure silicon grown epitaxially the layer. buffer and oxide prevent accumulation Ge at oxide-semiconductor interface thus keep state density within acceptable limits. Si cap leads to sequential turn-on channel as is clearly observed in low-temperature C-V curves. show that this dual-channel structure can be...

Pseudomorphic Si/Si-Ge strained layer superlattices are metastable and will relax to lower-energy, less strained, states on thermal annealing. Such relaxation may occur by the generation of misfit dislocation or compositional homogenization superlattice. The particular mechanism adopted is shown depend initial density structures. In cases where a significant portion strain accommodated an array dislocations in as-grown state there propensity generating additional dislocations. case...

Single-phase SnxGe1−x alloys with x up to 0.3 have been grown by molecular beam epitaxy. X-ray diffraction measurements indicate the layers diamond crystal structure. The metastability of is apparent as increases in growth temperature, layer thickness, or Sn composition cause phase separation into a noncubic (white β-Sn) form. Rutherford backscattering spectrometry and reflection high-energy electron that initial stages are complicated. first several hundred angstroms compositionally graded,...

The apparent saturation of aggressive Moore's law scaling semiconductor technologies is pushing the boundaries traditional packaging and integration schemes to accommodate ever-growing data bandwidth heterogeneity demands. In this article, we demonstrate silicon-interconnect fabric (Si-IF) technology as a superior alternative conventional printed circuit boards (PCBs) enhance system scaling. Si-IF silicon-based, package-less, fine-pitch, highly scalable, heterogeneous platform assemble...

We report the first SiGe base heterojunction Bipolar Transistors (HBT) The devices were fabricated using Molecular Beam Epitaxy (MBE), low temperature processing and different germanium contents. transistors demonstrate current gain show expected increase in collector as a result of reduced bandgap due to Ge incorporation base. A 6 times was measured for 1000A device containing 12% Ge, consistent with shrinkage approximately 45 meV. For homojunction transistors, widths thin 800A grown,...

Electrical fuse (eFUSE) has become a popular choice to enable memory redundancy, chip identification and authentication, analog device trimming, other applications. We will review the evolution applications of electrical solutions for 180 nm 45 technologies at IBM, provide some insight into future uses in 32 technology beyond with eFUSE as building block autonomic future.

We have investigated the interaction between Ti and in temperature range of 400° to about 1000°C. The reaction proceeds a layer‐by‐layer fashion consists reduction followed by formation Ti‐rich silicide at interface. At higher temperatures, oxide is formed near surface. starts approximately 400°C, loss becomes significant above 500°C. A strong takes place 700°C above. thicker , resistance it has degradation due elevated effects.