Jianbiao Chen

ORCID: 0000-0003-1407-533X
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced Memory and Neural Computing
  • Advanced Sensor and Energy Harvesting Materials
  • Conducting polymers and applications
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • TiO2 Photocatalysis and Solar Cells
  • Quantum Dots Synthesis And Properties
  • Advanced Optical Sensing Technologies
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • Photoreceptor and optogenetics research
  • Nanowire Synthesis and Applications
  • Carbon Nanotubes in Composites
  • Supercapacitor Materials and Fabrication
  • Chalcogenide Semiconductor Thin Films
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • Matrix Theory and Algorithms
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and interfaces
  • Surface Modification and Superhydrophobicity

Northwest Normal University
2015-2025

Guangzhou Vocational College of Science and Technology
2019-2023

Xichang University
2021

Space Engineering University
2018-2019

PLA Academy of Military Science
2017

China Academy Of Machinery Science & Technology (China)
2015

Academy of Opto-Electronics
2015

Shanghai Maritime University
2007-2013

South China Normal University
2012

The field emission (FE) properties of TiO2 nanotube arrays (TNAs) synthesized by anodization are dramatically improved after hydrogenation at various temperatures in a range 400–550 °C. Compared with pristine TNAs, the turn-on fields hydrogenated TNAs (H:TNAs) significantly decreased from 18.23 to 1.75 V μm−1, and closely related temperature. Importantly, optimized sample H:TNAs prepared 550 °C shows excellent FE performances involving both low high current density 4.0 mA cm−2 4.50V...

10.1088/0957-4484/23/45/455204 article EN Nanotechnology 2012-10-22

Memristor holds great potential for enabling next-generation neuromorphic computing hardware. Controlling the interfacial characteristics of device is critical seamlessly integrating and replicating synaptic dynamic behaviors; however, it commonly overlooked. Herein, we report straightforward oxidation a Mo electrode in air to design MoOx memristors that exhibit nonvolatile ultrafast switching (0.6–0.8 mV/decade, <1 mV/decade) with high on/off ratio (>104), long durability (>104 s), low...

10.1021/acs.jpclett.4c00600 article EN The Journal of Physical Chemistry Letters 2024-03-27

A mass of oxygen vacancies are successfully introduced into TiO2 nanotube arrays using low-cost NaBH4 as a reductant in liquid-phase environment. By controlling and adjusting the reduction time over range 0–24 h, doping concentration vacancy is controllable eventually reaches saturation. Meanwhile, thermal stability also investigated, indicating that part remain stable up to 250 °C. In addition, this strategy significantly lowers requirements instruments cost. More interesting, reduced show...

10.1021/am503379y article EN ACS Applied Materials & Interfaces 2014-11-19

Neuromorphic simulation, i.e., the use of electronic devices to simulate neural networks human brain, has attracted a lot interest in fields data processing and memory. This work provides new method for preparing 1,3-dimethylimidazolium nitrate ([MMIm][NO3]:H2O) microfluidic memristor that is ultralow cost technically uncomplicated. Such fluidic device uses capillaries as memory tubes, which are structurally similar interconnected neurons by simple solution treatment. When voltage applied,...

10.1021/acs.jpclett.3c03184 article EN The Journal of Physical Chemistry Letters 2024-02-27

Emerging optoelectronic memristive devices with high parallelism and low-power consumption have made neuromorphic computing hardware a tangible reality. The coordination of conductivity regulation through both electrical light signals is pivotal for advancing the development synaptic memristors brainlike functionalities. Here, an artificial visual synapse presented Ti3C2 MXene memristor which demonstrates not only nonvolatile memory effect (Set/Reset: 0.58/–0.55 V; Retention: >103 s)...

10.1021/acs.jpclett.4c02281 article EN The Journal of Physical Chemistry Letters 2024-08-19

Memristive devices with both electrically and optically induced synaptic dynamic behaviors will be crucial to the accomplishment of brain-inspired neuromorphic computing systems, in which resistive materials device architectures are two most important cornerstones, but still under challenge. Herein, kuramite Cu3SnS4 is newly introduced into poly-methacrylate as switching medium construct memristive devices, expected high-performance bio-mimicry diverse optoelectronic plasticity demonstrated....

10.1063/5.0151205 article EN The Journal of Chemical Physics 2023-05-08

The partially reduced TiO(2) nanotube arrays (TNAs) are prepared via an uncomplicated and low-cost liquid phase reduction strategy using NaBH(4) as the reducing agent. By controlling adjusting temperatures from 30 to 90 °C, treatment can not only change their surface morphology but also introduce oxygen vacancies into them, resulting in optimized morphology, elevated Fermi-level, effective work function improved conductivity of TNAs. Meanwhile, thermal long-term stability vacancy...

10.1088/0957-4484/26/17/175705 article EN Nanotechnology 2015-04-08

The great potential of artificial optoelectronic devices that are capable mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new p-type Cu2ZnSnS4@BiOBr nanosheets embedded poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) presented acting as switching layer, which not only shows bipolar resistive features (SET/RESET voltages, ∼ −0.93/+1.35 V; retention, >104...

10.1021/acs.jpclett.2c03939 article EN The Journal of Physical Chemistry Letters 2023-02-06

Nowadays, smart flexible and wearable electronic devices are experiencing rapid development. As one of core components, pressure sensor has attracted more attentions. High sensitivity, broad detection range fast...

10.1039/d4ta08386e article EN Journal of Materials Chemistry A 2025-01-01

Research on memristive devices to seamlessly integrate and replicate the dynamic behaviors of biological synapses will illuminate mechanisms underlying parallel processing information storage in human brain, thereby affording novel insights for advancement artificial intelligence. Here, an electric synapse is demonstrated a one-step Mo-selenized MoSe2 memristor, having not only long-term stable resistive switching characteristics (reset 0.51 ± 0.01 V, on/off ratio > 30, retention 103 s) but...

10.1021/acs.jpclett.4c03353 article EN The Journal of Physical Chemistry Letters 2025-01-23
Coming Soon ...