A5067538622- 2D Materials and Applications
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- MXene and MAX Phase Materials
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Graphene research and applications
- Silicon Carbide Semiconductor Technologies
- Ionic liquids properties and applications
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Copper Interconnects and Reliability
- Catalytic Processes in Materials Science
- ZnO doping and properties
- Electrochemical Analysis and Applications
- Molecular spectroscopy and chirality
- Chemical and Physical Properties in Aqueous Solutions
- Advancements in Semiconductor Devices and Circuit Design
- melanin and skin pigmentation
- Semiconductor materials and interfaces
- Magnetic Field Sensors Techniques
- Industrial Gas Emission Control
- Combustion and flame dynamics
- Skin Protection and Aging
- Thermal properties of materials
KTH Royal Institute of Technology
2023-2024
Zhuhai Institute of Advanced Technology
2021
Huazhong University of Science and Technology
2014-2020
Wuhan National Laboratory for Optoelectronics
2015-2020
Shanghai Jiao Tong University
2020
Dalian University of Technology
2019
High Magnetic Field Laboratory
2017
Qingdao University
2009
High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise 2.8 × 10(-10) μm(2) Hz(-1) 10 Hz is also achieved room temperature. Furthermore, negative differential resistance behavior experimentally observed and its origin self-heating identified using pulsed-current-voltage measurements.
Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic optoelectronic applications. Although there have been increasing numbers studies on improving the performance MoS2 field-effect transistors (FETs) using various methods, dielectric interface, which plays a decisive role in determining mobility, interface traps, thermal transport FETs, has not well explored understood. In this article, we present...
Transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials for their potential in next-generation electronics. One of the big challenges is to realize a large single-crystal TMDCs film with high mobility, which critical channel materials. Herein, we report an optimized atmospheric pressure chemical vapor deposition method growing monolayer MoS2 on molten glass substrate domain size up 563 μm. Better interface quality can be achieved using high-κ dielectrics respect...
In this letter, normally-OFF AlGaN/GaN metal- oxide-semiconductor high-electron-mobility transistors with a threshold voltage of 2.2 V have been achieved by an atomic layer etching technique. Combined surface passivation deposition composite HfSiO high-κ gate dielectric, well-controlled gate-recess process minimized damage results in improved interface properties low trap density 2.8 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup>...
Excessive melanogenesis leads to hyperpigmentation-related cosmetic problems. UV exposure increases oxidative stress, which promotes melanogenesis-related signal pathways such as the PKA, microphthalmia-associated transcription factor (MITF), tyrosinase (TYR), tyrosinase-related protein-1 (TRP1), and protein-2 (TRP2) pathways. Glycine is a source of endogenous antioxidants, including glutathione. Fermented fish collagen (FC) contains glycine; thus, we evaluated effect FC on decreasing via...
Black phosphorus is a layered material stacked together by weak van der Waals force with direct bandgap and highly anisotropic electrical characteristics. Most of the previous reports focus on low-field mobility transistors based SiO2 back gate dielectrics. Recently, black encapsulated hexagonal boron nitride have been demonstrated greatly improved at low temperatures. However, this approach requires multiple dry transfer methods using both flakes, which are only available in small crystal...
Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on p-type properties. Very few studies have been performed n-type electronic characteristics which are important not only for complementary operation logic, but also crucial understanding transport through metal–black junction. A thorough and proper evaluation performance potential both p- n-types highly desirable. In this paper, we investigate...
Enhancement-mode (E-mode) GaN MOS-HEMTs using recess process typically face the challenge of precise thickness control, surface roughness issue, and interface traps, all which could lead to degradation device performance cause reliability issues. In this article, we use a combined atomic layer etching (ALE) technique deposited (ALD) HfSiO dielectric. ALE is repeated oxidation dry with minimal damage, leading precisely controlled low-damage channel area. The fabricated AlGaN/GaN exhibit...
Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates scaling potential future generation based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional properties such as anisotropy high mobility. However, its ultrathin body nature, phosphorus-metal behaves differently than conventional Schottky barrier (SB) junctions,...
In this letter, we report optimized transport properties in gate recessed enhancement-mode GaN MOS-HEMTs by incorporating silicon into atomic layer deposited dielectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Compared with commonly used dielectric, the interface trap density can be reduced nearly an order of magnitude and fixed oxide traps inside are to almost half using high-quality passivation HfSiO...
We present a new tunneling transistor based on 2D black phosphorus and 3D indium arsenide heterojunction with broken-gap band alignment. The observed negative differential resistance transconductance behaviors can be attributed to the interband tunneling.
Commercial (protiated) samples of the "green" and biodegradable bioester 2-ethylhexyl laurate (2-EHL) were mixed with D-2-EHL synthesized by hydrothermal deuteration, mixtures demonstrating bulk structuring in small-angle neutron scattering measurements. Analysis a polymer framework yielded radius gyration (Rg) 6.5 Å Kuhn length (alternatively described as persistence or average segment length) 11.2 Å. Samples 2-EHL dispersed acetonitrile formed self-assembled structures exceeding molecular...
Abstract Black phosphorus (BP) has great potential in high‐performance radio frequency electronics owing to its high carrier mobility and velocity. The electrical properties of black experience rapid deterioration upon exposure moisture oxygen, which poses a challenge the device fabrication, especially deposition gate dielectrics using conventional top‐gate approach. Herein, Damascene‐like planarization process is presented create an embedded stack with high‐κ under gate‐first approach,...
We have systematically studied the effect of back-gate voltage on low-frequency noise properties MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> transistors from 300 to 20 K in this work. The results show that performance top-gate transistor can be effectively tuned by Vbg. When Vbg increases V, maximum on-current up 588 μA/μm for 1-μm channel length device, as well five times reduction and two contact resistance. Fermi-level...
In this paper, we discuss possible solutions to overcome the critical issues for GaN-on-Si power device popularization including cost competitiveness Si MOSFETs, system level reliability verification, and electromagnetic interference (EMI) mitigation at high switching frequency without compromising loss. Both an advanced epitaxy technology a comprehensive platform of 200 mm electron mobility transistors (HEMTs) mass production are presented. A novel strain engineering is reported realize...
A series of 19 ionic liquids (ILs) based on phosphonium and imidazolium cations varying alkyl-chain lengths with the orthoborate anions bis(oxalato)borate [BOB]- , bis(mandelato)borate, [BMB]- bis(salicylato)borate, [BScB]- are synthesized studied using small-angle neutron scattering (SANS). All measured systems display nanostructuring, 1-methyl-3-n-alkyl imidazolium-orthoborates forming clearly bicontinuous L3 spongelike phases when alkyl chains longer than C6 (hexyl). fitted Teubner Strey...
Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, sensors. Magnetoresistance nonmagnetic semiconductors recently raised much attention shows great potential due its large magnitude that is comparable or even larger than materials. However, most previous work focus on two terminal devices with dimensions, typically micrometer scales, which severely limit their performance more...
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use the gate dielectric of 4H-SiC MOS capacitors. Since constant Al2O3 is not high enough, many other high-k dielectrics are actively explored. In this letter, a report interface properties capacitors with Hafnium silicate (HfSiOx) presented. The HfSiOx was deposited by thermal atomic layer deposition. A systematic study I-V and multi-frequency C-V characteristics were carried out results showed could...
Seiji Tsuzuki opened the session with some general comments: I would like to comment on interactions of ionic and non-polar species conductor surfaces. The these surfaces are somewhat different from between molecules.
In this paper, we report GaN MOS-HEMTs with high quality atomic-layer-deposited HfLaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> as gate dielectric. The threshold voltage of the recessed MOS-HEMT can be enhanced from -6.2 V to 0.8 V. E-mode exhibits ideal subthreshold swing ~ 66 mV/dec and on-off ratio 1.2×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> . Conductance method has been applied reveal interface trap density...
The interface between III-V and gate dielectrics is a key challenge in developing high performance MOSFETs such as GaAs InGaAs. density of states (D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) makes it very difficult to modulate surface Fermi level inversion carrier concentration. By growing an epitaxial layer (ALE) La xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>...
In order to mitigate the electric field crowdingingate dielectrics and solve reliability issue, high dielectric constant (κ) materials such as Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> was applied in SiC metal-oxide-semiconductor (MOS) capacitors. High quality thin film deposited on 4H-SiC by thermal atomic layer deposition (ALD), followed post annealing (PDA). The PDA...