Incipient faults in power distribution systems potentially lead to catastrophic failures. Detection of incipient contributes proactive fault management and predictive maintenance, which effectively improves supply reliability. Since the are infrequent transient, few samples can be procured real applications. In this paper, a detection method based on human-level concept learning (HLCL) is proposed address problem. The contains two steps: waveform decomposition (HLWD) hierarchical...

Current ripples produced in single-phase onboard charging systems of electric vehicles (EVs) impact the lifetime their batteries. In this article, an isolated multifunctional charger topology is proposed. The system can be used to charge auxiliary batteries or serve as active filter (AF) for power battery charger. By time-sharing multiplexing it, high-frequency (HF) and low-frequency (LF/second harmonic) current ripple suppressed driving parking modes, respectively. proposed also achieve...

Intelligent perception is the cornerstone of digitalisation power grid. Due to closest connection with users, information ability distribution network directly affects reliability supply. Distribution has a wide range geographical and equipment types. The application intelligent high complexity dynamics under limitation both technology management. Therefore, study first sorts out current status in from three fields including automation, metering systems, inspection. Then, constraints...

In single-phase ac battery chargers, pulsating power at twice of the line frequency is delivered by source resulting in second-harmonic ripple voltage on dc-link if additional passive or active filter (AF) circuits are not used. this article, an inductance-based AF using leakage inductance machine windings along with a current compensation control method proposed. No components required. The used article has double-layer winding center tap each phase and structure special that magnetomotive...

The single-line-to-ground faults with line breaks (SLGFs-LBs) occur more and frequently in distribution networks can cause major safety accidents. It is difficult to distinguish the (SLGFs) resonant grounding systems ungrounding due same electrical characteristics on source side uncertain operation conditions of networks. This paper proposes a method for distinguishing SLGFs-LBs SLGFs. First, source-side load-side voltage SLGFs are analyzed, phase difference between voltages fault non-fault...

A novel high-voltage thin layer SOI technology based on 1-mum-thick silicon and 2-mum-thick buried oxide for driving color plasma display panels (PDP) has been developed. High-voltage pLDMOS with thick gate oxide, high- voltage nLDMOS, low-voltage CMOS are compatible LOCOS isolation. The proposed includes two aspects: first, an implantation after field (IFO) is developed achieving shallow junction depth of p-field region to avoid punch-through breakdown induced by back-gate (BG) effect...

Abstract A new ultralow gate–drain charge ( Q GD ) 4H-SiC trench MOSFET is presented and its mechanism investigated by simulation. The novel features double shielding structures (DS-MOS): one the grounded split gate (SG), other P + region (PSR). Both SG PSR reduce coupling effect between drain, transform most part of capacitance C into gate–source GS drain–source DS in series. Thus reduced proposed DS-MOS obtains . Compared with double-trench (DT-MOS) conventional (CT-MOS), decreases 85%...

Root-cause identification of faults in a distribution network is conducive to fault inspection as well reducing injuries and damage. In this article, novel method based on correlation dimension average resistance proposed identify the root cause permanent single line-to-ground urban small current grounding systems. First, reliability whether occurred dry or wet surface can be identified by dimension. Then, used classify specific cause, including land, concrete, water. Experimental results...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Breakdown mechanism for a high-voltage n-channel LDMOS compatible with integrated circuit (HVIC) on p-type silicon-on-insulator (SOI) layer is investigated theoretically and experimentally. The device characterized by buried n-islands oxide (BOX). For the proposed structure, ionized donors in enhance bottom-interface electric field of SOI from 10 <formula formulatype="inline"><tex...

Inverted pendulum poor stability, such as large overshoot problem, a fuzzy controller that can adjust the output in real time based on error and rate of change, experiment simulation results show has good control characteristics robustness, addition, is simple structure, high reliability, adaptability, better realization an inverted stabilization function.

The power distribution network is an important link between the end of grid and users. Precise predictions on risk probability in severe weather could provide electric company with a reference to daily operation maintenance arrangements. also prepare professional mechanists necessary supplies advance restoring supply short time. In this paper, failure prediction method based particle swarm optimisation extreme gradient boosting tree algorithm proposed. local data fed into model, outputting...

A novel concept of SOI BG REBULF (back-gate reduced bulk field), which breaks through the limitation vertical breakdown voltage lateral high-voltage transistors, is proposed. The mechanism improved behaviour reduction electric field in silicon due to field-modulated effect interface charges induced by back-gate voltage. impact bias on over 600 V LDMOS transistors discussed. When 330 V,the 1020 V, 47.8% greater than that conventional LDMOS.

In response to the severe energy and environmental issues, CO2 emission reduction low-carbon development are inevitable. China has become biggest emitter in world since 2006. As a major source China, power industry is facing greater pressure for carbon abatement. By applying various technologies mechanisms, potential systems considerable. This paper proposes pseudo-sequential Monte Carlo simulation method benefit evaluation of distribution system including distributed wind turbines, solar...

—A single-event burnout (SEB) hardened design based on high voltage lateral double-diffused metal-oxide-silicon (LDMOS) devices with an optimal partial buried oxide (BOX) layer and a N-buffer is firstly proposed in this paper. By analyzing the response of surface electric field transient current, parameters layers are selected. Simulation results reveal that buffer can suppress peak from 4.5 MV/cm to 2 MV/cm, recreate position BOX reconstruct path electron hole currents, reducing risk...

Abstract A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode L-shaped P + shielding region beneath the gate aside one wall of (S-TMOS). works as a free-wheeling reverse recovery conduction, which significantly reduces charge ( Q rr ) turn-on voltage V F ). effectively shields coupling drain, resulting lower gate–drain capacitance C gd date–drain Compared with that conventional SiC (C-TMOS), S-TMOS...

A novel SiC double-trench metal-oxide-semiconductor field effect transistor (MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new MOSFET has a trench gate stepped-trench source, features an on the top sidewall of source (MT MOS). In reverse conduction state, turns firstly to prevent internal parasitic body being activated, thus reduces turn-on voltage V F suppresses bipolar degradation phenomena. 1.70 (@ I ds = –100 A/cm 2 ) for MT MOS...