Abstract A climate data record of global sea surface temperature (SST) spanning 1981–2016 has been developed from 4 × 10 12 satellite measurements thermal infra-red radiance. The spatial area represented by pixel SST estimates is between 1 km 2 and 45 . mean density good-quality observations 13 −2 yr −1 uncertainty evaluated per datum, the median for SSTs being 0.18 K. Multi-annual observational stability relative to drifting buoy within 0.003 K zero with high confidence, despite maximal...

Abstract A 42-year climate data record of global sea surface temperature (SST) covering 1980 to 2021 has been produced from satellite observations, with a high degree independence in situ measurements. Observations twenty infrared and two microwave radiometers are used, adjusted for their differing times day measurement avoid aliasing ensure observational stability. total 1.5 × 10 13 locations processed, yielding 1.4 12 SST observations deemed be suitable applications. The corresponding...

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO based a push-push topology, which employs InP HBT technology with peak f/sub T/'s and max/'s of 75 200 GHz, respectively. produces maximum oscillating 108 GHz delivers an output power +0.92 dBm into 50 /spl Omega/. also obtains tuning bandwidth 2.73 or 2.6% using varactor. A phase noise -88 dBc/Hz -109...

We report here 305 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , 340 xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> and 1550 mS/mm extrinsic g/sub m/ from a 0.10 μm In/sub x/Ga/sub 1-x/As/In/sub 0.62/Al/sub 0.48/As/InP HEMT with x graded 0.60 to 0.80. This device has the highest yet reported for gate length combination of any three-terminal device. performance is achieved by using graded-channel design which...

We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-μm gate length and 1.28-mm output periphery fabricated using this has demonstrated an of 427 mW 19% power-added efficiency at 95 GHz. To our knowledge, is the highest ever reported frequency any solid-state amplifier.

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using 23.8-GHz HBT dielectric resonator oscillator (DRO) in conjunction with GaAs-based high electron mobility (HEMT) quadrupler W-band output amplifiers. Good phase noise performance was achieved due to...

The authors report on a 50-MHz-55-GHz multidecade bandwidth InP-based heterojunction bipolar transistor (HBT) MMIC distributed amplifier (DA) which achieves the widest and highest frequency of operation so far demonstrated for amplifier. HBT DA was fabricated using high-speed 1-μm InAlAs-InGaAs-InP base-undercut technology with peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 's xmlns:xlink="http://www.w3.org/1999/xlink">max</sub>...

A monolithic V-band VCO using InP-based HBT technology has been designed, fabricated, and tested. This delivers a peak output power of 4 dBm at center frequency 62.4 GHz with tuning range 300 MHz. The measured phase noise shows -78 dBc/Hz 100 kHz offset -104 1 MHz offset. To our knowledge, this is the highest fundamental-mode oscillator ever reported bipolar transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The combines alternative Class-E of operation with harmonic termination technique that minimizes insertion loss matching circuitry to obtain ultrahigh-efficiency at X-band. For performance, amplifiers output network employs transmission line topology achieve terminations while providing optimal fundamental impedance shape current and...

We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain 7.2 dB at 190 GHz and greater than 5 from 170 to 194 GHz. The was fabricated using pseudomorphic 20-nm In/sub 0.65/Ga/sub 0.35/As channel structure grown on 3-in InP substrate by MBE. Based results, intrinsic exhibits an F/sub max/ 400

X-ray diffuse scattering in (001) InGaAs/(AlGa)As transistor structures of high electron mobility was observed for whose InGaAs channel thickness substantially exceeded the critical misfit dislocation formation. The determined to originate from dislocations, as confirmed by plan-view transmission microscopy. Diffuse measured using triple-axis diffraction, which showed that sensitive density and direction dislocations. Using microscopy calibration, we scattered intensity directly proportional...

This paper reports on a dc-20-GHz InP heterojunction bipolar transistor (HBT) active mixer, which obtains the highest gain-bandwidth product (GBP) thus far reported for direct-coupled analog mixer integrated circuit (IC). The HBT is based Gilbert transconductance multiplier cell and integrates RF, local oscillator, IF amplifiers, High-speed 70-GHz f/sub T/ 160-GHz max/ devices along with microwave matching accounts its record performance. Operated as down-converter monolithic achieves an RF...

The relationship between structural defects and device performance of In0.21Ga0.79As/(Al,Ga)As high electron mobility transistors with different In0.21Ga0.79As channel thicknesses (75–300 Å) was analyzed. Using triple axis x-ray diffraction transmission microscopy, we determined that the presence misfit dislocations along only one 〈110〉 directions did not impair performance. In fact, sample highest cutoff frequency possessed direction. However, for thicker samples, an orthogonal array...

An InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) with a 2-30 GHz 1-dB bandwidth has been demonstrated which benchmarks the widest reported for an DA. The DA combines 100 fmax and 60 fT technology cascode coplanar waveguide topology to achieve this record bandwidth. gain cell offers 5-7 dB more available (MAG) than common-emitter, is used extend amplifier's upper frequency performance. A design environment simplify modeling fabrication, as well reduce size of amplifier. Novel active...

The development of W-band monolithic low noise amplifiers (LNAs) using a fully passivated 0.1 µm pseudomorphic InAlAs/InGaAs/InP HEMT technology is presented. Both wafer passivation and stabilisation bakes have been introduced, for the first time, to InP MMIC process make it more suitable production. A three-stage single-ended 94 GHz LNA shows measured figure 3.3 dB 20 associated gain. 2.3 achieved single-stage at GHz. These results represent state-of-the-art performance LNAs this frequency....

This work describes the first demonstration of an InP DHBT MMIC Doherty amplifier at K-band. When combined with DHBTs, achieves a record linear PAE 20% under strict C/IM3 linearity ratio 30 dBc while producing Pout 20.1 dBm. benchmarks 3 dB greater and 4% higher than achieved PHEMT Ku-band for same linearity. Compared to its own "class A" bias performance, 11 improvement in slightly efficiency. The superior approach is attractive satellite MM-wave communication systems.

High-speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBTs) are the preferred approach for systems operating at clock frequencies of 40 GHz above. This need higher performance electronics space defense has driven development InP HBTs TRW. Consistent continuous improvements from baseline MBE structure...

An 18 GHz coplanar waveguide (CPW) monolithic voltage controlled oscillator (VCO) has been demonstrated using InAlAs/InGaAs HBT technology. The VCO achieves 6% frequency tuning range a varactor diode constructed from the base-emitter junction. A CPW design was employed to increase Q-factor of resonator as well reduce chip size. obtains an output power +10/spl plusmn/0.5 dBm over and collector efficiency 11.5%. SSB phase noise -72 -96 dBc/Hz at 100 kHz 1 MHz offset carrier were achieved,...

The authors present the results of two 160-190-GHz monolithic low-noise amplifiers (LNAs) fabricated with 0.07-μm pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain 9 dB was measured at 188 GHz for first LNA 3 bandwidth from 164 to 192 while second has achieved over 6 142 180 GHz. same design (second LNA) also 0.08-μm gate and wet process, showing small-signal noise figure. All measurement were obtained on-wafer...

This paper reports on what is believed to be the highest IP3/P/sub dc/ power linearity figure of merit achieved from a monolithic microwave integrated circuit (MMIC) amplifier at millimeter-wave frequencies. The 44 GHz based an InP heterojunction bipolar transistor (HBT) technology with f/sub T/'s and max/'s 70 200 GHz, respectively. 44-GHz design consists four prematched 1/spl times/l0/spl mu/m/sup 2/ four-finger (40-/spl 2/) cells combined in parallel using compact /spl lambda//8 four-way...

Here we report on the first IP3 results of a 35-GHz Ka-band amplifier based InAlAs/InGaAs-InP heterofunction bipolar transistors (HBT's). The combines four 1×10 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> quad-emitter HBT devices for total emitter area 160 to achieve gain 5 dB and an 26.5 dBm at 35 GHz. was characterized over collector bias voltage indicates that there is optimum V/sub ce/, corresponding maximum DC power ratio,...

We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15 μm gate length InGaAs/InAlAs/InP HEMT's. A 640 single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4 dB associated gain at 94 GHz. This result represents the best to date measured from a single fixtured InP-based HEMT this frequency.

Here we describe a unique Ka-band self-oscillating HEMT-HBT cascode mixer design which integrates an active tunable resonator circuit. The VCO-mixer MMIC GaAs HEMT's and HBT's using selective molecular beam epitaxy (MBE) technology. operates similarly to dual-gate mixer. HBT of the is used construct VCO by presenting base with HEMT inductor. can be tuned from 28.5 29.3 GHz while providing /spl ap/0 dBm output power. Operated as upconverter, achieves 6-9 dB conversion loss over 31-39...