A5038812309- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Topological Materials and Phenomena
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Photorefractive and Nonlinear Optics
- Electronic and Structural Properties of Oxides
- Blind Source Separation Techniques
- Speech and Audio Processing
- Advanced Thermoelectric Materials and Devices
- Ferroelectric and Piezoelectric Materials
- Surface and Thin Film Phenomena
- Phase-change materials and chalcogenides
- Optical Coatings and Gratings
- Advanced Condensed Matter Physics
- Advanced Adaptive Filtering Techniques
- Quantum many-body systems
LafargeHolcim (France)
2020-2021
Ministry of Higher Education and Scientific Research
2020-2021
École Centrale de Lyon
2008-2013
Centre National de la Recherche Scientifique
2008-2013
Université Claude Bernard Lyon 1
2008-2013
Institut des Nanotechnologies de Lyon
2008-2013
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
2010-2012
Institut National des Sciences Appliquées de Lyon
2010
Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied means photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely radial quantum wells emitting in the telecom bands with a radiative lifetime 5-7 ns range at 14 K. studies single reveal that polarization is mainly parallel direction. A 20-fold reduction intensity observed between 300 K confirming very good...
In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with vapour-liquid-solid method, growth temperature and V/III pressure ratio have been optimized remove any zinc-blende insertion. These pure Wz investigated photoluminescence (PL), time-resolved PL excitation. Direct observation second third valence band in using spectroscopy at high excitation power reported and, from these measurements, a crystal field...
InP nanowires grown on silicon substrate are investigated using time-resolved spectroscopy. A strong modification of the exciton lifetime is observed (from 0.11 to 1.2 ns) when growth temperature increased from 340 °C 460 °C. This dependence not related density zinc-blende insertions in wurtzite or linewidth. The excitation power and linewidth investigated, these results allow us interpret as a consequence reduction surface recombination velocity with temperature.
The absorption and emission polarization properties of InAs quantum rods embedded in InP nanowires (NWs) are investigated by mean (micro-)photoluminescence spectroscopy. It is shown that the degree linear (0.94) (0.5) a single NW can be explained photonic nature structure. Knowing these parameters, optical NWs ordered ensembles correlated one to another via proposed model, so studied using on as-grown samples. As an example, anisotropy as function excitation wavelength ensemble found...
It is demonstrated that the growth direction of InP nanowires grown on (001)-oriented silicon substrate strongly depends diameter gold catalyst droplets. Small droplets with less than about 15 nm lead to formation leaning {111} planes zinc blende seeds formed in early stages growth. Larger twins and these twinned variants, inducing directions corresponding 〈115〉 substrate.
We report on design, simulation and fabrication of ultimate compact 3D close-geometries optical microcavities. These are based the extension so-called 2.5D nanophotonic approach where a quasi control photons has been soon demonstrated by our group. A tight photons, spectrally spatially, in small air region inside circular regular pattern high index material-based nanopillars is when adjusting number pillars, their diameters diameter pillar-circle. Bottom-up InP nanowires grown molecular beam...
In this report, we show experimental results on the growth and characterization of InP nanowires (NWs) grown silicon SrTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrates by solid source molecular beam epitaxy (SSMBE) using Au-assisted catalytic growth. Our objective is to study effect a thin crystalline oxide template nucleation orientation NWs. Various parameters such as temperature phosphorous pressure were studied control...
In this paper, a modified version adaptive Infinite Impulse Response Least Mean Square (IIR-LMS) is presented. This new proposed algorithm tries to enhance the performance of Previously Proposed LMS (PPLMS) by overcoming and avoid some its drawbacks which are higher level miss-adjustment at steady state, need know statistical feature input signal in order calculate diagonal convergence factor matrix (MMAX). The called Fast Adaptive (FALMS), uses an appropriate time-varying value M(k)MAX...
Abstract By using the molecular beam epitaxy growth technique, impacts of temperatures for Bi2Te3 thin films were investigated, besides substrate on growth. Moreover, full width half maximums, based X-ray photoemission spectroscopy measurements, have been shown clear results Cr-Te bonds in chromium doped films. The current aim is a spotlight enlightening how joined within epitaxial process doping concentration by providing detailed experimental evidences through systematic structure and...
Optical and structural properties of InP nanowires grown on silicon by molecular beam epitaxy using Vapor-Liquid-Solid method with different V/III pressure ratios are presented. A high ratio favors a nearly perfect wurtzite crystal phase 1 ns lifetime at 14K.
Abstract Pb 1 -x Sn x Te is a topological crystalline insulator system with an even number of band Dirac cone at 001,110 and 111 orientations, which represent trivial under Kane Mele classification. However, in the past few years, surface states feature that protected by mirror symmetry drew attention. In contrast to Mele’s material protects time-reversal symmetry. has crystal structure phase transition can drive features system. A systematic study on energy gap versus temperature...