A5060783421- Diamond and Carbon-based Materials Research
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Force Microscopy Techniques and Applications
- Cold Atom Physics and Bose-Einstein Condensates
- Ion-surface interactions and analysis
- Advanced Materials Characterization Techniques
- Quantum and electron transport phenomena
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor Quantum Structures and Devices
- Surface and Thin Film Phenomena
- Topological Materials and Phenomena
Centre de Nanosciences et de Nanotechnologies
2023-2024
Université Paris-Saclay
2021-2023
Centre National de la Recherche Scientifique
2021-2023
Laboratoire de physique des Solides
2021
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. investigate crystalline quality, deformation and B distribution profile doped layer STEM analysis followed HAADF contrast studies GPA, compare results to SIMS analyses Hall measurements. When increasing active concentration above 4.3 at.%, fully strained, perfectly crystalline, Si:B starts showing dislocations stacking faults. These only disappear around 8 at.% when is well...
Superconductivity in ultradoped Si 1− x Ge :B epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to 7 at%. A fraction ranging from 0 0.21 incorporated Si:B: 1) through a precursor gas, gas immersion doping; 2) ion implantation, followed annealing; 3) ultrahigh‐vacuum‐chemical vapor deposition growth of thin layer, annealing. The 30 75 nm‐thick display superconducting critical temperatures T c...
The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of vast array atomic scale devices structures ranging from nanoscale motors switches quantum corrals. Molecular in particular have attracted considerable attention view their potential assembly into complex machines. Whereas manipulated or are usually on top substrate, embedded lattice can be very beneficial bottom-up construction, may additionally used...
A new method is presented to measure strain over a large area of single crystal. The 4D-ED data are collected by recording 2D diffraction pattern at each position in the TEM lamella scanned electron beam STEM. Data processing completed with computer program (available free charge) that runs under Windows operating system. Previously published similar methods either commercial or need special hardware (electron holography) based on HRTEM, which involves limitations respect size field view....
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% 12 at.%. Ultra-high doping was made by saturating the chemisorption sites of a Si wafer BCl3, followed nanosecond laser anneal (Gas Immersion Laser Doping). The varies thus nearly linearly number process repetitions. However, it is not case for hole which tends to saturate at high concentration. difference increases as square concentration, pointing towards...