A5060384255- Surface Roughness and Optical Measurements
- Advanced Surface Polishing Techniques
- Conducting polymers and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Calibration and Measurement Techniques
- Optical Coatings and Gratings
- Advanced Memory and Neural Computing
Zhengzhou University
2023-2024
China Electronic Product Reliability and Environmental Test Institute
2024
Wuhan University
2022-2023
Amorphous Bi and GO co-doped WO 3 film with excellent electrochromic performance.
The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical-mechanical planarization (CMP) annealing severely affect the reliability of chips. Traditional methods defect characterization are destructive cumbersome. In study, new inspection method was developed using Mueller matrix spectroscopic ellipsometry. TSV-Cu with 3-μm-diameter 8-μm-deep Cu filling showed...
As the number of 3D stacking layers continues to increase and thermal design power logic chips escalates, management is confronted with unprecedented challenges. The temperature surface be treated also a parameter that difficult measure non-invasively. standard technique infrared (IR) pyrometry. However, due transparency Si wafers in IR spectrum, it cannot used low-temperature regime (0°C ~ 400°C). In this study, new measurement method was developed, utilizing Mueller Matrix...
Abstract The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) annealing severely affect the reliability of chips. Traditional methods defect characterization are destructive cumbersome. In study, new inspection method was developed using Mueller matrix spectroscopic ellipsometry. TSV-Cu with 3-µm-diameter 8-µm-deep showed three...